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2SA897 Transistor. Datasheet pdf. Equivalent

Type Designator: 2SA897

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.95 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 55 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO202

2SA897 Transistor Equivalent Substitute - Cross-Reference Search

2SA897 Datasheet PDF:

5.1. 2sa893.pdf Size:24K _hitachi

2SA897
2SA897

2SA893, 2SA893A Silicon PNP Epitaxial Application Low frequency high voltage amplifier Complementary pair with 2SC1890/A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA893, 2SA893A Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SA893 2SA893A Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to base voltage VEBO

Datasheet: 2SA893D , 2SA893E , 2SA893F , 2SA894 , 2SA895 , 2SA896 , 2SA896-1 , 2SA896-2 , 2SC945 , 2SA898 , 2SA899 , 2SA90 , 2SA900 , 2SA901 , 2SA902 , 2SA903 , 2SA904 .

 


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