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2SB1011
  2SB1011
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2SB1011
  2SB1011
  2SB1011
 
2SB1011
  2SB1011
 
 
List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
2SB1011 All Transistors Datasheet. Power MOSFET, IGBT, IC, Triacs Database. Semiconductor Catalog
 

2SB1011 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB1011

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 10

Maximum collector-base voltage |Ucb|, V: 400

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 35

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 140

Noise Figure, dB: -

Package of 2SB1011 transistor: TO126

2SB1011 Equivalent Transistors - Cross-Reference Search

2SB1011 PDF doc:

1.1. 2sb1011.pdf Size:87K _panasonic

2SB1011
2SB1011
Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification Unit: mm 8.0+0.5 0.1 3.20.2 ? 3.160.1 Features High collector-base voltage (Emitter open) VCBO High collector-emitter voltage (Base open) VCEO Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit 0.750.1 0.50.1 Collector-base voltage (Emitter open) VCBO -400 V 0.50.1 1.760.1 4.60.2 Collector-emitter voltage (Base open) VCEO -400 V 2.30.2 1: Emitter Emitter-base voltage (Collector open) VEBO -5 V 2: Collector 1 2 3 3: Base Collector current IC -100 mA TO-126B-A1 Package Peak collector current ICP -200 mA Collector power dissipation PC 1.2 W Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emiter o

4.1. 2sb1015a.pdf Size:166K _toshiba

2SB1011
2SB1011
2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit: mm Low collector saturation voltage: VCE (sat) = -1.7 V (max) (I = -3 A, I = -0.3 A) C B Collector power dissipation: P = 25 W (Tc = 25C) C Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -7 V Collector current IC -3 A Base current IB -0.5 A Ta = 25C 2.0 Collector power PC W dissipation Tc = 25C 25 Junction temperature Tj 150 C JEDEC ? Storage temperature range Tstg -55~150 C JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.7 g (typ.) 1 2003-02-04 2SB1015A Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -60 V, IE = 0 ? ? -100 A Emitter cut-off current IEBO VEB = -7 V, IC = 0 ? ? -100 A Collector-emitt

4.2. 2sb1018a.pdf Size:233K _toshiba

2SB1011
2SB1011

4.3. 2sb1015.pdf Size:148K _toshiba

2SB1011
2SB1011

4.4. 2sb1018.pdf Size:199K _toshiba

2SB1011
2SB1011

4.5. 2sb1016a.pdf Size:168K _toshiba

2SB1011
2SB1011

4.6. 2sb1017.pdf Size:63K _utc

2SB1011
2SB1011
UNISONIC TECHNOLOGIES CO., LTD 2SB1017 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. FEATURES * Low base drive ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB1017L-x-TF3-T 2SB1017G-x-TF3-T TO-220F B C E Tube 2SB1017L-x-TF3-T (1)Packing Type (1) T: Tube (2)Package Type (2) TF3: TO-220F (3)Rank (3) x: refer to Classification of hFE (4) Halogen Free, L: Lead Free (4)Lead Free www.unisonic.com.tw 1 of 2 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R219-010.a 2SB1017 Preliminary PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Tc=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -5 V Collector Current IC -4 A Base Cu

4.7. 2sb1012.pdf Size:33K _hitachi

2SB1011
2SB1011
2SB1012(K) Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 5 k? 1 k? 2 3 (Typ) (Typ) 1 2SB1012(K) Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Collector current IC 1.5 A Collector peak current IC(peak) 3.0 A Collector power dissipation PC*1 20 W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C C to E diode forward current ID*1 1.5 A Note: 1. Value at TC = 25 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CEO 120 V IC = 10 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO 7 V IE = 50 mA, IC = 0 voltage Collector cutoff current ICBO 100 A VCB = 120 V, IE = 0 ICEO 10 A VCE = 100 V,

4.8. 2sb1019.pdf Size:45K _no

2SB1011
2SB1011

4.9. 2sb1017.pdf Size:33K _no

2SB1011
2SB1011

4.10. 2sb1016.pdf Size:69K _wingshing

2SB1011
2SB1011
2SB1016 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SD1407 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25? PC 25 W ? ? ? Junction Temperature Tj 150 ? ? ? ? Storage Temperature Tstg -50~150 ? ELECTRICAL CHARACTERISTICS (TA=25? ?) ? ? Characteristic Symbol Test Condition Min Typ Max Unit Collector Cutoff Current ICBO VCB= -150V , IE=0 -10 A Emitter Cutoff Current IEBO VEB= -5V , IC=0 -10 A DC Current Gain hFE1 VCE= -5.0V ,IC=-1.0A 100 Collector- Emitter Saturation Voltage VCE(sat) IC=-4A ,IB=-0.4mA -2.0 V Current Gain Bandwidth Product fT VCE= -10V ,IC=-0.5A 60 MHZ Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153 Homepage: http://www.wingshing.com E-mail: w

4.11. 2sb1019.pdf Size:156K _jmnic

2SB1011
2SB1011
JMnic Product Specification Silicon PNP Power Transistors 2SB1019 DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1412 APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector -emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -7 A IB Base current -1 A Ta=25? 2 PC Collector power dissipation W TC=25? 30 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB1019 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -50 V

4.12. 2sb1017.pdf Size:208K _jmnic

2SB1011
2SB1011
JMnic Product Specification Silicon PNP Power Transistors 2SB1017 DESCRIPTION · ·With TO-220Fa package ·Complement to type 2SD1408 APPLICATIONS ·For power amplifications ·Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -4 A IB Base current -0.4 A Ta=25? 2.0 PC Collector power dissipation W TC=25? 25 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB1017 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -80 V VCEsat Collector-emitter satur

4.13. 2sb1016.pdf Size:213K _jmnic

2SB1011
2SB1011
JMnic Product Specification Silicon PNP Power Transistors 2SB1016 DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Complement to type 2SD1407 APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector -emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -5 A IB Base current -0.5 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB1016 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -100 V VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0

4.14. 2sb1015.pdf Size:204K _jmnic

2SB1011
2SB1011
JMnic Product Specification Silicon PNP Power Transistors 2SB1015 DESCRIPTION · ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25? ·Low collector saturation voltage ·Complement to type 2SD1406 APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -3 A IB Base current -0.5 A Ta=25? 2.0 PC Collector power dissipation W TC=25? 25 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB1015 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(BR) Collector-emitter breakdown voltage IC=-50mA; IB=0 -60 V

4.15. 2sb1018.pdf Size:208K _jmnic

2SB1011
2SB1011
JMnic Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION ·With TO-220F package ·High collector current ·Low collector saturation voltage ·Complement to type 2SD1411 APPLICATIONS ·Power amplifier applications ·High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector -emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -7 A IB Base current -1 A TC=25? 30 PC Collector power dissipation W Ta=25? 2 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB1018 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter br

4.16. 2sb1019.pdf Size:119K _inchange_semiconductor

2SB1011
2SB1011
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1019 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Low saturation voltage Ў¤ Complement to type 2SD1412 APPLICATIONS Ў¤ High current switching applications Ў¤ Power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage INCH Base current Collector -emitter voltage Emitter-base voltage ANG EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -70 -50 -5 -7 -1 UNIT V V V A A Collector current Ta=25Ўж PC Collector power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature 2 W 30 150 -55~150 Ўж Ўж

4.17. 2sb1018a.pdf Size:230K _inchange_semiconductor

2SB1011
2SB1011
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Complement to Type 2SD1411A APPLICATIONS ·High current switching applications. ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IBB Base Current-Continuous -1 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 30 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1018A ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN T

4.18. 2sb1017.pdf Size:170K _inchange_semiconductor

2SB1011
2SB1011
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1017 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Complement to type 2SD1408 APPLICATIONS Ў¤ For power amplifications Ў¤ Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector Base DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER ANG INCH Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Collector-base voltage EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -80 -80 -5 -4 -0.4 UNIT V V V A A Ta=25Ўж PC TC=25Ўж Tj Tstg Junction temperature Storage temperature 2.0 W 25 150 -55~150 Ўж Ўж

4.19. 2sb1016.pdf Size:175K _inchange_semiconductor

2SB1011
2SB1011
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1016 DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Complement to type 2SD1407 APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector -emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -5 A IB Base current -0.5 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1016 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0

4.20. 2sb1015.pdf Size:165K _inchange_semiconductor

2SB1011
2SB1011
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1015 DESCRIPTION · ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25? ·Low collector saturation voltage ·Complement to type 2SD1406 APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -3 A IB Base current -0.5 A Ta=25? 2.0 PC Collector power dissipation W TC=25? 25 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1015 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V

4.21. 2sb1018.pdf Size:168K _inchange_semiconductor

2SB1011
2SB1011
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION Ў¤ With TO-220F package Ў¤ High collector current Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SD1411 APPLICATIONS Ў¤ Power amplifier applications Ў¤ High current switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER HAN INC Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current SEM GE Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE -100 -80 -5 -7 -1 UNIT V V V A A TC=25Ўж PC Collector power dissipation Ta=25Ўж Tj Tstg Junction temperature Storage temperature 30 W 2 150 -55~150 Ўж Ўж

See also transistors datasheet: 2SB1003 , 2SB1004 , 2SB1005 , 2SB1007 , 2SB1008 , 2SB1009 , 2SB101 , 2SB1010 , C945 , 2SB1012 , 2SB1012K , 2SB1013 , 2SB1014 , 2SB1015 , 2SB1015O , 2SB1015Y , 2SB1016 .

Keywords

 2SB1011 Datasheet  2SB1011 Design 2SB1011 MOSFET 2SB1011 Power
 2SB1011 RoHS Compliant 2SB1011 Service 2SB1011 Triacs 2SB1011 Semiconductor
 2SB1011 Database 2SB1011 Innovation 2SB1011 IC 2SB1011 Electricity

 

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