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2SB1011
  2SB1011
  2SB1011
 
2SB1011
  2SB1011
  2SB1011
 
2SB1011
  2SB1011
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2SB1011 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SB1011 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB1011

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 10

Maximum collector-base voltage |Ucb|, V: 400

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 35

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 140

Noise Figure, dB: -

Package of 2SB1011 transistor: TO126

2SB1011 Equivalent Transistors - Cross-Reference Search

2SB1011 PDF doc:

1.1. 2sb1011.pdf Size:87K _panasonic

2SB1011
2SB1011
Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification Unit: mm 8.0+0.5 0.1 3.20.2 ? 3.160.1 Features High collector-base voltage (Emitter open) VCBO High collector-emitter voltage (Base open) VCEO Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit 0.750.1 0.50.1 Collector-base voltage (Emitter open) VCBO -400 V 0.50.1 1.760.1 4.60.2 Collector-emitter voltage (Base open) VCEO -400 V 2.30.2 1: Emitter Emitter-base voltage (Collector open) VEBO -5 V 2: Collector 1 2 3 3: Base Collector current IC -100 mA TO-126B-A1 Package Peak collector current ICP -200 mA Collector power dissipation PC 1.2 W Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emiter o

4.1. 2sb1018a.pdf Size:233K _toshiba

2SB1011
2SB1011

4.2. 2sb1018.pdf Size:199K _toshiba

2SB1011
2SB1011

4.3. 2sb1015.pdf Size:148K _toshiba

2SB1011
2SB1011

4.4. 2sb1015a.pdf Size:166K _toshiba

2SB1011
2SB1011
2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit: mm Low collector saturation voltage: VCE (sat) = -1.7 V (max) (I = -3 A, I = -0.3 A) C B Collector power dissipation: P = 25 W (Tc = 25C) C Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -7 V Collector current IC -3 A Base current IB -0.5 A Ta = 25C 2.0 Collector power PC W dissipation Tc = 25C 25 Junction temperature Tj 150 C JEDEC ? Storage temperature range Tstg -55~150 C JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.7 g (typ.) 1 2003-02-04 2SB1015A Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -60 V, IE = 0 ? ? -100 A Emitter cut-off current IEBO VEB = -7 V, IC = 0 ? ? -100 A Collector-emitt

4.5. 2sb1016a.pdf Size:168K _toshiba

2SB1011
2SB1011

4.6. 2sb1017.pdf Size:63K _utc

2SB1011
2SB1011
UNISONIC TECHNOLOGIES CO., LTD 2SB1017 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. FEATURES * Low base drive ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB1017L-x-TF3-T 2SB1017G-x-TF3-T TO-220F B C E Tube 2SB1017L-x-TF3-T (1)Packing Type (1) T: Tube (2)Package Type (2) TF3: TO-220F (3)Rank (3) x: refer to Classification of hFE (4) Halogen Free, L: Lead Free (4)Lead Free www.unisonic.com.tw 1 of 2 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R219-010.a 2SB1017 Preliminary PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Tc=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -5 V Collector Current IC -4 A Base Cu

4.7. 2sb1012.pdf Size:33K _hitachi

2SB1011
2SB1011
2SB1012(K) Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 5 k? 1 k? 2 3 (Typ) (Typ) 1 2SB1012(K) Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Collector current IC 1.5 A Collector peak current IC(peak) 3.0 A Collector power dissipation PC*1 20 W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C C to E diode forward current ID*1 1.5 A Note: 1. Value at TC = 25 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CEO 120 V IC = 10 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO 7 V IE = 50 mA, IC = 0 voltage Collector cutoff current ICBO 100 A VCB = 120 V, IE = 0 ICEO 10 A VCE = 100 V,

4.8. 2sb1019.pdf Size:45K _no

2SB1011
2SB1011

4.9. 2sb1017.pdf Size:33K _no

2SB1011
2SB1011

4.10. 2sb1016.pdf Size:69K _wingshing

2SB1011
2SB1011
2SB1016 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SD1407 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25? PC 25 W ? ? ? Junction Temperature Tj 150 ? ? ? ? Storage Temperature Tstg -50~150 ? ELECTRICAL CHARACTERISTICS (TA=25? ?) ? ? Characteristic Symbol Test Condition Min Typ Max Unit Collector Cutoff Current ICBO VCB= -150V , IE=0 -10 A Emitter Cutoff Current IEBO VEB= -5V , IC=0 -10 A DC Current Gain hFE1 VCE= -5.0V ,IC=-1.0A 100 Collector- Emitter Saturation Voltage VCE(sat) IC=-4A ,IB=-0.4mA -2.0 V Current Gain Bandwidth Product fT VCE= -10V ,IC=-0.5A 60 MHZ Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153 Homepage: http://www.wingshing.com E-mail: w

4.11. 2sb1018.pdf Size:208K _jmnic

2SB1011
2SB1011
JMnic Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION ·With TO-220F package ·High collector current ·Low collector saturation voltage ·Complement to type 2SD1411 APPLICATIONS ·Power amplifier applications ·High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector -emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -7 A IB Base current -1 A TC=25? 30 PC Collector power dissipation W Ta=25? 2 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB1018 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter br

4.12. 2sb1015.pdf Size:204K _jmnic

2SB1011
2SB1011
JMnic Product Specification Silicon PNP Power Transistors 2SB1015 DESCRIPTION · ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25? ·Low collector saturation voltage ·Complement to type 2SD1406 APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -3 A IB Base current -0.5 A Ta=25? 2.0 PC Collector power dissipation W TC=25? 25 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB1015 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(BR) Collector-emitter breakdown voltage IC=-50mA; IB=0 -60 V

4.13. 2sb1019.pdf Size:156K _jmnic

2SB1011
2SB1011
JMnic Product Specification Silicon PNP Power Transistors 2SB1019 DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1412 APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector -emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -7 A IB Base current -1 A Ta=25? 2 PC Collector power dissipation W TC=25? 30 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB1019 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -50 V

4.14. 2sb1016.pdf Size:213K _jmnic

2SB1011
2SB1011
JMnic Product Specification Silicon PNP Power Transistors 2SB1016 DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Complement to type 2SD1407 APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector -emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -5 A IB Base current -0.5 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB1016 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -100 V VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0

4.15. 2sb1017.pdf Size:208K _jmnic

2SB1011
2SB1011
JMnic Product Specification Silicon PNP Power Transistors 2SB1017 DESCRIPTION · ·With TO-220Fa package ·Complement to type 2SD1408 APPLICATIONS ·For power amplifications ·Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -4 A IB Base current -0.4 A Ta=25? 2.0 PC Collector power dissipation W TC=25? 25 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB1017 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -80 V VCEsat Collector-emitter satur

4.16. 2sb1018a.pdf Size:230K _inchange_semiconductor

2SB1011
2SB1011
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Complement to Type 2SD1411A APPLICATIONS ·High current switching applications. ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IBB Base Current-Continuous -1 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 30 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1018A ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN T

4.17. 2sb1018.pdf Size:168K _inchange_semiconductor

2SB1011
2SB1011
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION Ў¤ With TO-220F package Ў¤ High collector current Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SD1411 APPLICATIONS Ў¤ Power amplifier applications Ў¤ High current switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER HAN INC Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current SEM GE Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE -100 -80 -5 -7 -1 UNIT V V V A A TC=25Ўж PC Collector power dissipation Ta=25Ўж Tj Tstg Junction temperature Storage temperature 30 W 2 150 -55~150 Ўж Ўж

4.18. 2sb1015.pdf Size:165K _inchange_semiconductor

2SB1011
2SB1011
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1015 DESCRIPTION · ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25? ·Low collector saturation voltage ·Complement to type 2SD1406 APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -3 A IB Base current -0.5 A Ta=25? 2.0 PC Collector power dissipation W TC=25? 25 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1015 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V

4.19. 2sb1019.pdf Size:119K _inchange_semiconductor

2SB1011
2SB1011
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1019 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Low saturation voltage Ў¤ Complement to type 2SD1412 APPLICATIONS Ў¤ High current switching applications Ў¤ Power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage INCH Base current Collector -emitter voltage Emitter-base voltage ANG EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -70 -50 -5 -7 -1 UNIT V V V A A Collector current Ta=25Ўж PC Collector power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature 2 W 30 150 -55~150 Ўж Ўж

4.20. 2sb1016.pdf Size:175K _inchange_semiconductor

2SB1011
2SB1011
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1016 DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Complement to type 2SD1407 APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector -emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -5 A IB Base current -0.5 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1016 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0

4.21. 2sb1017.pdf Size:170K _inchange_semiconductor

2SB1011
2SB1011
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1017 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Complement to type 2SD1408 APPLICATIONS Ў¤ For power amplifications Ў¤ Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector Base DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER ANG INCH Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Collector-base voltage EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -80 -80 -5 -4 -0.4 UNIT V V V A A Ta=25Ўж PC TC=25Ўж Tj Tstg Junction temperature Storage temperature 2.0 W 25 150 -55~150 Ўж Ўж

See also transistors datasheet: 2SB1003 , 2SB1004 , 2SB1005 , 2SB1007 , 2SB1008 , 2SB1009 , 2SB101 , 2SB1010 , C945 , 2SB1012 , 2SB1012K , 2SB1013 , 2SB1014 , 2SB1015 , 2SB1015-O , 2SB1015-Y , 2SB1016 .

Keywords

 2SB1011 Datasheet  2SB1011 Datenblatt  2SB1011 RoHS  2SB1011 Distributor
 2SB1011 Application Notes  2SB1011 Component  2SB1011 Circuit  2SB1011 Schematic
 2SB1011 Equivalent  2SB1011 Cross Reference  2SB1011 Data Sheet  2SB1011 Fiche Technique

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