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2SB1011 Transistor (IC) Datasheet. Cross Reference Search. 2SB1011 Equivalent

Type Designator: 2SB1011

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 10

Maximum collector-base voltage |Ucb|, V: 400

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), ¬įC: 175

Transition frequency (ft), MHz: 35

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 140

Noise Figure, dB: -

Package of 2SB1011 transistor: TO126

2SB1011 Transistor Equivalent Substitute - Cross-Reference Search

2SB1011 PDF:

1.1. 2sb1011.pdf Size:87K _panasonic

2SB1011
2SB1011

Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification Unit: mm 8.0+0.5 Ė0.1 3.2Ī0.2 ? 3.16Ī0.1 ¶ Features ē High collector-base voltage (Emitter open) VCBO ē High collector-emitter voltage (Base open) VCEO ē Large collector power dissipation PC ē Low collector-emitter saturation voltage VCE(sat) ¶ Absolute Maximum Ratings Ta = 25įC

4.1. 2sb1015a.pdf Size:166K _toshiba

2SB1011
2SB1011

2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit: mm ē Low collector saturation voltage: VCE (sat) = -1.7 V (max) (I = -3 A, I = -0.3 A) C B ē Collector power dissipation: P = 25 W (Tc = 25įC) C Maximum Ratings (Ta = = 25įC) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Colle

4.2. 2sb1018a.pdf Size:233K _toshiba

2SB1011
2SB1011

4.3. 2sb1015.pdf Size:148K _toshiba

2SB1011
2SB1011

4.4. 2sb1018.pdf Size:199K _toshiba

2SB1011
2SB1011

4.5. 2sb1016a.pdf Size:168K _toshiba

2SB1011
2SB1011

4.6. 2sb1017.pdf Size:63K _utc

2SB1011
2SB1011

UNISONIC TECHNOLOGIES CO., LTD 2SB1017 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. FEATURES * Low base drive ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB1017L-x-T

4.7. 2sb1012.pdf Size:33K _hitachi

2SB1011
2SB1011

2SB1012(K) Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 5 k? 1 k? 2 3 (Typ) (Typ) 1 2SB1012(K) Absolute Maximum Ratings (Ta = 25įC) Item Symbol Rating Unit Collector to base voltage VCBO Ė120 V Collector to emitter voltage VCEO Ė120 V Emitter to base voltage VEB

4.8. 2sb1019.pdf Size:45K _no

2SB1011
2SB1011

4.9. 2sb1017.pdf Size:33K _no

2SB1011
2SB1011

4.10. 2sb1016.pdf Size:69K _wingshing

2SB1011
2SB1011

2SB1016 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SD1407 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25? PC 25 W ? ? ? Junct

4.11. 2sb1019.pdf Size:156K _jmnic

2SB1011
2SB1011

JMnic Product Specification Silicon PNP Power Transistors 2SB1019 DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1412 APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?)

4.12. 2sb1017.pdf Size:208K _jmnic

2SB1011
2SB1011

JMnic Product Specification Silicon PNP Power Transistors 2SB1017 DESCRIPTION · ·With TO-220Fa package ·Complement to type 2SD1408 APPLICATIONS ·For power amplifications ·Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UN

4.13. 2sb1016.pdf Size:213K _jmnic

2SB1011
2SB1011

JMnic Product Specification Silicon PNP Power Transistors 2SB1016 DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Complement to type 2SD1407 APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collect

4.14. 2sb1015.pdf Size:204K _jmnic

2SB1011
2SB1011

JMnic Product Specification Silicon PNP Power Transistors 2SB1015 DESCRIPTION · ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25? ·Low collector saturation voltage ·Complement to type 2SD1406 APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBO

4.15. 2sb1018.pdf Size:208K _jmnic

2SB1011
2SB1011

JMnic Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION ·With TO-220F package ·High collector current ·Low collector saturation voltage ·Complement to type 2SD1411 APPLICATIONS ·Power amplifier applications ·High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Base A

4.16. 2sb1019.pdf Size:119K _inchange_semiconductor

2SB1011
2SB1011

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1019 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Low saturation voltage Ў¤ Complement to type 2SD1412 APPLICATIONS Ў¤ High current switching applications Ў¤ Power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maxim

4.17. 2sb1018a.pdf Size:230K _inchange_semiconductor

2SB1011
2SB1011

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Complement to Type 2SD1411A APPLICATIONS ·High current switching applications. ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UN

4.18. 2sb1017.pdf Size:170K _inchange_semiconductor

2SB1011
2SB1011

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1017 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Complement to type 2SD1408 APPLICATIONS Ў¤ For power amplifications Ў¤ Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector Base DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL

4.19. 2sb1016.pdf Size:175K _inchange_semiconductor

2SB1011
2SB1011

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1016 DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Complement to type 2SD1407 APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE U

4.20. 2sb1015.pdf Size:165K _inchange_semiconductor

2SB1011
2SB1011

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1015 DESCRIPTION · ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25? ·Low collector saturation voltage ·Complement to type 2SD1406 APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum rating

4.21. 2sb1018.pdf Size:168K _inchange_semiconductor

2SB1011
2SB1011

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION Ў¤ With TO-220F package Ў¤ High collector current Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SD1411 APPLICATIONS Ў¤ Power amplifier applications Ў¤ High current switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Fig.1 simplified outline (T

See also transistors datasheet: 2SB1003 , 2SB1004 , 2SB1005 , 2SB1007 , 2SB1008 , 2SB1009 , 2SB101 , 2SB1010 , C945 , 2SB1012 , 2SB1012K , 2SB1013 , 2SB1014 , 2SB1015 , 2SB1015O , 2SB1015Y , 2SB1016 .

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