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2SB1141 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB1141

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 10

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 18

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1.2

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF: 30

Forward current transfer ratio (hFE), min: 70

Noise Figure, dB: -

Package of 2SB1141 transistor: TO126

2SB1141 Equivalent Transistors - Cross-Reference Search

2SB1141 PDF document for downloads:

1.1. 2sb1141.pdf Size:117K _sanyo

4.1. 2sb1143.pdf Size:126K _sanyo

4.2. 2sb1143_2sd1683.pdf Size:60K _sanyo

Ordering number:ENN2063A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1143/2SD1683 50V/4A Switching Applications Applications Package Dimensions · Voltage regulators, relay drivers, lamp drivers, unit:mm electrical equipment. 2042B [2SB1143/2SD1683] Features 8.0 4.0 3.3 · Adoption of FBET, MBIT processes. 1.0 1.0 · Low saturation voltage. · Large current capacity and wide ASO. 3.0 1.6 0.8 0.8 0.75 0.7 1 2 3 1 : Emitter 2 : Collector ( ) : 2SB1143 2.4 3 : Base 4.8 SANYO : TO-126ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)60 V Collector-to-Emitter Voltage VCEO (–)50 V Emitter-to-Base Voltage VEBO (–)6 V Collector Current IC (–)4 A Collector Current (Pulse) ICP (–)6 A 1.5 W Collector Dissipation PC Tc=25?C 10 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Condi

4.3. 2sb1140.pdf Size:102K _sanyo

Ordering number:2069A PNP Epitaxial Planar Silicon Transistor 2SB1140 20V/5A Switching Applications Applications Package Dimensions · Strobes, power supplies, relay drivers, lamp drivers. unit:mm 2042A Features [2SB1140] · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current cpacity. · Short switching time. B : Base C : Collector E : Emitter SANYO : TO-126ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –25 V Collector-to-Emitter Voltage VCEO –20 V Emitter-to-Base Voltage VEBO –5 V Collector Current IC –5 A Collector Current (Pulse) ICP –8 A Base Current IB –0.5 A Collector Dissipation PC 1.5 W Tc=25?C 10 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=–20V, IE=0 –500 nA Emitter Cutoff Current IEBO

4.4. 2sb1144.pdf Size:130K _sanyo

4.5. 2sb1142.pdf Size:129K _sanyo

4.6. 2sb1149.pdf Size:143K _nec

4.7. 2sb1148.pdf Size:59K _panasonic

Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type Unit: mm For low-voltage switching 7.0± 0.3 3.5± 0.2 3.0± 0.2 Complementary to 2SD1752 and 2SD1752A Features Low collector to emitter saturation voltage VCE(sat) 1.1± 0.1 0.85± 0.1 0.75± 0.1 0.4± 0.1 High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 2.3± 0.2 4.6± 0.4 Absolute Maximum Ratings (TC=25?C) 1 2 3 1:Base 2:Collector Parameter Symbol Ratings Unit 3:Emitter I Type Package Collector to 2SB1148 –40 VCBO V Unit: mm base voltage 2SB1148A –50 7.0± 0.3 3.5± 0.2 2.0± 0.2 0 to 0.15 Collector to 2SB1148 –20 VCEO V emitter voltage 2SB1148A –40 3.0± 0.2 Emitter to base voltage VEBO –7 V Peak collector current ICP –20 A 2.5 Collector current IC –10 A 0.75± 0.1 0.5 max. 0.9± 0.1 Collector power TC=25° C 15 1.1± 0.1 0 to 0.15 PC W dissipation Ta=25° C 1.3 1 2 3 Junction temperature Tj

4.8. 2sb1149.pdf Size:122K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1149 DESCRIPTION Ў¤ With TO-126 package Ў¤ DARLINGTON Ў¤ High DC current gain Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak SEM GE Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE -100 -100 -8 -3.0 -5.0 UNIT V V V A A Ta=25Ўж PD Total power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature 1.3 W 15 150 -55~150 Ўж Ўж

4.9. 2sb1145.pdf Size:115K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1145 DESCRIPTION Ў¤ With TO-220F package Ў¤ High DC current gain. Ў¤ DARLINGTON Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For high current driver and power driver applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Fig.1 simplified outline (TO-220F) and symbol HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector dissipation SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE -120 -120 -6 -3 -5 UNIT V V V A A Open collector TC=25Ўж PC Ta=25Ўж Tj Tstg Junction temperature Storage temperature 20 W 2 150 -55~150 Ўж Ўж

See also transistors datasheet: 2SB1136R , 2SB1136S , 2SB1137 , 2SB114 , 2SB1140 , 2SB1140R , 2SB1140S , 2SB1140T , KD503 , 2SB1141Q , 2SB1141R , 2SB1141S , 2SB1141T , 2SB1142 , 2SB1142R , 2SB1142S , 2SB1142T .

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