2SB1189R Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB1189R

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 10

Maximum collector current |Ic max|, A: 0.7

Maximum junction temperature (Tj), °C: 195

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 180

Noise Figure, dB: -

Package of 2SB1189R transistor: SP0

2SB1189R Equivalent Transistors - Cross-Reference Search

2SB1189R PDF document for downloads:

3.1. 2sb1189_2sb1238.pdf Size:135K _rohm

Medium power transistor(?80V, ?0.7A) 2SB1189 / 2SB1238 ?Features ?Dimensions (Unit : mm) 1) High breakdown voltage, BVCEO=?80V, and 2SB1189 high current, IC=?0.7A. 4.0 2) Complements the 2SD1767 / 2SD1859. 1.0 2.5 0.5 (1) (2) ?Absolute maximum ratings (Ta=25?C) (3) Parameter Symbol Limits Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -0.7 A 0.5 ROHM : MPT3 (1) Base 2SB1189 Collector power PC 2 W ?1 (2) Collector dissipation EIAJ : SC-62 2SB1238 1 ?2 (3) Emitter Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C ?1 When mounted on a 40?40?0.7 mm ceramic board. 2SB1238 ?2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger. 2.5 6.8 ?Packaging specifications and hFE Type 2SB1189 2SB1238 0.65Max. Package MPT3 ATV hFE QR QR 0.5 Marking BD - ? ( ) ( ) ( ) 1 2 3 Code T100 TV2 2.54 2.54 Basic ordering unit (pieces) 1000 2

3.2. 2sb1189.pdf Size:42K _rohm

2SB1189 / 2SB1238 / 2SB899F Transistors Transistors 2SD1767 / 2SD1859 / 2SD1200F (96-618-B13) (96-750-D13) 278

3.3. 2sb1189.pdf Size:271K _htsemi

2SB1 1 8 9 TRANSISTOR(PNP) FEATURES High breakdown voltage Complements to 2SD1767 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -80 V Collector-Base Voltage VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.7 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50?A,IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=-2mA,IB=0 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-50?A,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.5 ?A Emitter cut-off current IEBO VEB=-4V,IC=0 -0.5 ?A DC current gain hFE VCE=-3V,IC=-100mA 82 390 Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -0.4 V Transition frequency fT VCE=-10V,I

3.4. 2sb1189_sot-89.pdf Size:216K _lge

2SB1189 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 1.8 2 1.4 1.4 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN High breakdown voltage 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 Complements to 2SD1767 0.37 1.5 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -80 V Collector-Base Voltage VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.7 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50?A,IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=-2mA,IB=0 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-50?A,IC=0 -5 V Collector cut-off current ICBO

See also transistors datasheet: 2SB1186 , 2SB1186A , 2SB1187 , 2SB1188P , 2SB1188Q , 2SB1188R , 2SB1189P , 2SB1189Q , C102 , 2SB119 , 2SB1190 , 2SB1191 , 2SB1192 , 2SB1193 , 2SB1194 , 2SB1195 , 2SB1196 .

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