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2SB1196
Transistor Datasheet. Parameters and Characteristics. Type Designator: 2SB1196
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 25
Maximum collector-base voltage |Ucb|, V: 70
Maximum collector-emitter voltage |Uce|, V: 70
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 4
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 180
Noise Figure, dB: - Package of 2SB1196
transistor: TO126
2SB1196
Equivalent Transistors - Cross-Reference Search 2SB1196
PDF document for downloads:
4.1. 2sb1198k.pdf  Size:106K _rohm  |
 | Transistors
Low-frequency Transistor
(*80V, *0.5A)
2SB1198K
FFeatures FExternal dimensions (Unit:s mm)
1) Low VCE(sat).
VCE(sat) = *0.2V (Typ.)
(IC / IB = *0.5A / *50mA)
2) High breakdown voltage.
BVCEO = *80V
3) Complements the 2SD1782K.
FStructure
Epitaxial planar type
PNP silicon transistor
FAbsolute maximum ratings (Ta = 25_C)
FElectrical characteristics (Ta = 25_C)
(96-136-B93)
229
Transistors 2SB1198K
FPackaging specifications and hFE hFE values are classified as follows :
FElectrical characteristic curves
230
Transistors 2SB1198K
231
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application |
4.2. 2sb1197k.pdf Size:46K _rohm  |
 | 2SB1197K
Transistors
Low Frequency Transistor ( 32V, 0.8A)
2SB1197K
External dimensions (Unit : mm)
Features
1) Low VCE(sat).
VCE(sat) 0.5V
2.90.2
1.1+0.2
IC / IB= 0.5A / 50mA
1.90.2 -0.1
0.80.1
0.95 0.95
2) IC = 0.8A.
(1) (2)
3) Complements the 2SD1781K.
0~0.1
(3)
All terminals have the
same dimensions
+0.1
0.15-0.06
0.4+0.1
-0.05
Structure
(1) Emitter
Epitaxial planar type
ROHM : SMT3 (2) Base
PNP silicon transistor
EIAJ : SC-59 (3) Collector
Abbreviated symbol: AH
?
Denotes hFE
?
Absolute maximum ratings (Ta=25 C)
Parameter Symbol Limits Unit
Collector-base voltage VCBO -40 V
Collector-emitter voltage VCEO -32 V
Emitter-base voltage VEBO -5 V
Collector current IC -0.8 A
Collector power dissipation PC 0.2 W
Junction temperature Tj 150 C
Storage temperature Tstg -55 to 150 C
Electrical characteristics (Ta=25 C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO -40 - - V IC= - |
4.3. 2sb1193.pdf Size:89K _panasonic  |
 | Power Transistors
2SB1193
Silicon PNP epitaxial planar type darlington
Unit: mm
For midium-speed power switching 10.00.2 4.20.2
5.50.2 2.70.2
Complementary to 2SD1773
? 3.10.1
Features
High forward current transfer ratio hFE
High-speed switching
Full-pack package which can be installed to the heat sink with one screw
1.30.2
1.40.1
0.5+0.2
0.1
Absolute Maximum Ratings TC = 25C
0.80.1
Parameter Symbol Rating Unit
2.540.3
Collector-base voltage (Emitter open) VCBO -120 V
5.080.5
Collector-emitter voltage (Base open) VCEO -120 V 1: Base
2: Collector
Emitter-base voltage (Collector open) VEBO -7 V
1 2 3
3: Emitter
EIAJ: SC-67
Collector current IC -8 A
TO-220F-A1 Package
Peak collector current ICP -12 A
Internal Connection
Collector power dissipation PC 50 W
Ta = 25C2
C
Junction temperature Tj 150 C
B
Storage temperature Tstg -55 ? +150 C
E
Electrical Characteristics TC = 25C 3C
Parameter Symbol Conditions Min Typ Max Uni |
4.4. 2sb1197.pdf Size:693K _secos  |
 | 2SB1197
-0.8 A, -40 V
PNP Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
SOT-23
Low VCE(sat).VCE(sat)?-0.5V(IC / IB = -0.5A /-50mA)
A
IC =-0.8A
L
3
Complements of the 2SD1781
3
Top View
C B
1
1 2
CLASSIFICATION OF hFE
2
K E
Product-Rank 2SB1197-P 2SB1197-Q 2SB1197-R
D
Range 82~180 120~270 180~390
H J
F G
Marking AHP AHQ AHR
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
PACKAGE INFORMATION
A 2.80 3.04 G 0.09 0.18
B 2.10 2.55 H 0.45 0.60
Package MPQ LeaderSize
C 1.20 1.40 J 0.08 0.177
D 0.89 1.15 K 0.6 REF.
SOT-23 3K 7’ inch
E 1.78 2.04 L 0.89 1.02
F 0.30 0.50
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO -40 V
Collector to Emitter Voltage VCEO -32 V
Emitter to Base Voltage VEBO -5 V
mA
Collector Currrent IC -800
Total Power Dis |
4.5. 2sb1197k.pdf Size:620K _secos  |
 | 2SB1197K
-0.8 A, -40 V
PNP Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
SC-59
Low VCE(sat).VCE(sat)?-0.5V(IC / IB = -0.5A /-50mA)
A
IC =-0.8A
L
3
3
Top View
C B
MECHANICAL DATA
1
Case: SC-59, 1 2
2
K E
Weight: 0.008 grams(approx.)
D
CLASSIFICATION OF hFE
H J
F G
Product-Rank 2SB1197K-Q 2SB1197K-R
Range 120~270 180~390
Millimeter Millimeter
REF. REF.
Marking AHQ AHR Min. Max. Min. Max.
A 2.70 3.10 G 0.10 REF.
B 2.25 3.00 H 0.40 REF.
C 1.30 1.70 J 0.10 0.20
D 1.00 1.40 K 0.45 0.55
PACKAGE INFORMATION
E 1.70 2.30 L 0.85 1.15
F 0.35 0.50
Package MPQ LeaderSize
SC-59 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO -40 V
Collector to Emitter Voltage VCEO -32 V
Emitter to Base Voltage VEBO -5 V
mA
Collector Currrent IC -800
To |
4.6. 2sb1194.pdf Size:122K _inchange_semiconductor  |
 | Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1194
DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High DC current gain Ў¤ High speed switching Ў¤ DARLINGTON Ў¤ Complement to type 2SD1633 APPLICATIONS Ў¤ For power switching applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25Ўж )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER
Fig.1 simplified outline (TO-220Fa) and symbol
HAN INC
Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Base current
SEM GE
Open emitter Open base Open collector
CONDITIONS
OND IC
TOR UC
VALUE -100 -100 -7 -5 -8 -0.5
UNIT V V V A A A
Ta=25Ўж PC Collector power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature
2 W 30 150 -55~150 Ўж Ўж
|
4.7. 2sb1192.pdf Size:128K _inchange_semiconductor  |
 | Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1192
DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High VCEO Ў¤ Large PC Ў¤ Complement to type 2SD1770 APPLICATIONS Ў¤ Power amplifier Ў¤ TV vertical deflection output
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base
Absolute maximum ratings(Ta=25Ўж )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER
Collector-base voltage
INCH
Collector-emitter voltage
Emitter-base voltage
ANG
EMIC ES
Open emitter Open base Open collector
CONDITIONS
OND
TOR UC
VALUE -200 -150 -6 -1 -2
UNIT V V V A A
Collector current Collector current-peak Ta=25Ўж
2 W 25 150 -55~150 Ўж Ўж
PC
Collector power dissipation TC=25Ўж
Tj Tstg
Junction temperature Storage temperature
|
4.8. 2sb1190.pdf Size:125K _inchange_semiconductor  |
 | Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1190
DESCRIPTION Ў¤ With TO-220 package Ў¤ High VCEO Ў¤ Large PC Ў¤ Complement to type 2SD1772 APPLICATIONS Ў¤ Power amplifier Ў¤ TV vertical deflection output
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25Ўж )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER
Fig.1 simplified outline (TO-220) and symbol
Collector-base voltage
INCH
Collector-emitter voltage
Emitter-base voltage
ANG
EMIC ES
Open emitter Open base Open collector
CONDITIONS
OND
TOR UC
VALUE -200 -150 -6 -1 -2
UNIT V V V A A
Collector current Collector current-peak Ta=25Ўж
1.4 W 25 150 -55~150 Ўж Ўж
PC
Collector power dissipation TC=25Ўж
Tj Tstg
Junction temperature Storage temperature
|
4.9. 2sb1193.pdf Size:112K _inchange_semiconductor  |
 | Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1193
DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High DC current gain Ў¤ High speed switching Ў¤ DARLINGTON Ў¤ Complement to type 2SD1773 APPLICATIONS Ў¤ For medium speed switching applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25Ўж )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER
Fig.1 simplified outline (TO-220Fa) and symbol
HAN INC
Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak
SEM GE
Open base
CONDITIONS
Open emitter
OND IC
TOR UC
VALUE -120 -120 -7 -8 -12
UNIT V V V A A
Open collector
Ta=25Ўж PC Collector power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature
2 W 50 150 -55~150 Ўж Ўж
|
4.10. 2sb1197.pdf Size:309K _htsemi  |
 | 2SB1 1 97
TRANSISTOR(PNP)
SOT-23
1. BASE Unit : mm
FEATURES
2. EMITTER
3. COLLECTOR
Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA)
IC =-0.8A.
Complements the 2SD1781.
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector- Base Voltage -40 V
VCEO Collector-Emitter Voltage -32 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.8 A
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO -40 V
IC =-50?A, IE=0
Collector-emitter breakdown voltage V(BR)CEO IC = -1mA, IB=0 -32 V
Emitter-base breakdown voltage V(BR)EBO -5 V
IE= -50?A, IC=0
Collector cut-off current ICBO VCB=-20V,IE=0 -0.5
?A
Emitter cut-off current IEBO VEB= -4V,IC=0 -0.5
?A
DC current gain hFE VCE=-3V,IC= -1 |
4.11. 2sb1197_sot-23.pdf Size:199K _lge  |
 | 2SB1197
SOT-23 Transistor(PNP)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Features
Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA)
IC =-0.8A.
Complements the 2SD1781.
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector- Base Voltage -40 V
VCEO Collector-Emitter Voltage -32 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.8 A
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO -40 V
IC =-50?A, IE=0
Collector-emitter breakdown voltage V(BR)CEO IC = -1mA, IB=0 -32 V
Emitter-base breakdown voltage V(BR)EBO -5 V
IE= -50?A, IC=0
Collector cut-off current ICBO VCB=-20V,IE=0 -0.5
?A
Emitter cut-off current IEBO VEB= -4V,IC=0 -0.5
?A
D |
4.12. 2sb1198k_sot-23-3l.pdf Size:252K _lge  |
 | 2SB1198K
SOT-23-3L Transistor(PNP)
1. BASE
SOT-23-3L
2. EMITTER
2.92
3. COLLECTOR
0.35
1.17
Features
2.80 1.60
Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA)
High breakdown voltage BVCEO=-80V
Complements the 2SD1782K
0.15
1.90
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -80 V
VCEO Collector-Emitter Voltage -80 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-50?A, IE=0 -80 V
Collector-emitter breakdown voltage V(BR)CEO IC=-2mA, IB=0 -80 V
Emitter-base breakdown voltage V(BR)EBO IE=-50?A, IC=0 -5 V
Collector cut-off current ICBO VCB=-50V, IE=0 - |
4.13. 2sb1197k_sot-23-3l.pdf Size:198K _lge  |
 | 2SB1197K
SOT-23-3L Transistor(PNP)
SOT-23-3L
1. BASE
2. EMITTER
2.92
0.35
3. COLLECTOR
1.17
Features
2.80 1.60
Power amplifier
0.15
1.90
MAXIMUM RATINGS* TA=25? unless otherwise noted
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector- Base Voltage -40
VCEO Collector-Emitter Voltage -32 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -800 mA
PC Collector Dissipation 200 mW
TJ, Tstg Junction and Storage Temperature -55-150 ?
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO -40 V
Ic=-50ВµA, IE=0
Collector-emitter breakdown voltage V(BR)CEO Ic= -1mA, IB=0 -32 V
Emitter-base breakdown voltage V(BR)EBO -5 V
IE= -50ВµA, IC=0
Collector cut-off current ICBO VCB=-20 V , IE |
4.14. 2sb1197.pdf Size:104K _wietron  |
 | 2SB1197
PNP General Purpose Transistors
3
Pb Lead(Pb)-Free
1
2
Features:
SOT-23
* High current capacity in compact package.
* Epitaxial planar type.
* We declare that the material of product compliance with RoHS requirements.
MAXIMUM RATINGS(Ta=25°C)
Rating Symbol Value Unit
VCBO
Collector-Base Voltage -40 V
Collector-Emitter Voltage
VCEO
-32 V
VEBO
Emitter-Base Voltage -5.0 V
IC
Collector Current - Continuous -800 mA
Total Device Dissipation
PD
200 mW
T =25°C
A
Tj °C
Junction Temperature +150
Tstg
Storage Temperature -55 to +150 °C
SOT-23 Outline Dimension
SOT-23
A
Dim Min Max
A 0.35 0.51
B 1.19 1.40
B
C
TOP VIEW
C 2.10 3.00
D 0.85 1.05
D
E 0.46 1.00
G
E
G 1.70 2.10
H
H 2.70 3.10
J 0.01 0.13
K
K 0.89 1.10
L
L 0.30 0.61
J M
M 0.076 0.25
WEITRON
1/3 19-Apr-2011
http://www.weitron.com.tw
2SB1197
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage
V(BR)CBO
-40 - - V
IC = - |
See also transistors datasheet: 2SB1189R
, 2SB119
, 2SB1190
, 2SB1191
, 2SB1192
, 2SB1193
, 2SB1194
, 2SB1195
, BC549
, 2SB1197
, 2SB1198
, 2SB1199
, 2SB119A
, 2SB12
, 2SB120
, 2SB1201
, 2SB1201R
. Keywords| 2SB1196
Datasheet | 2SB1196
Datenblatt | 2SB1196
RoHS | 2SB1196
Distributor | | 2SB1196
Application Notes | 2SB1196
Component | 2SB1196
Circuit | 2SB1196
Schematic | | 2SB1196
Equivalent | 2SB1196
Cross Reference | 2SB1196
Data Sheet | 2SB1196
Fiche Technique |
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