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2SB1217
Transistor Datasheet. Parameters and Characteristics. Type Designator: 2SB1217
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 10
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 45
Maximum emitter-base voltage |Ueb|, V: 7
Maximum collector current |Ic max|, A: 3
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 25
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 120
Noise Figure, dB: - Package of 2SB1217
transistor: TO126
2SB1217
Equivalent Transistors - Cross-Reference Search 2SB1217
PDF document for downloads:
1.1. 2sb1217.pdf  Size:191K _nec 1.2. 2sb1217.pdf Size:235K _inchange_semiconductor  |
 | INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SB1217
DESCRIPTION
·High Collector Current -IC= -3A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
·Good Linearity of hFE
·Low Saturation Voltage
·Complement to Type 2SD1818
APPLICATIONS
·Designed for use in DC-DC converter, driver, solenid and
motor .
ABSOLUTE MAXIMUM RATINGS(Ta=25?)
SYMBOL PARAMETER VALUE UNIT
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -7 V
IC Collector Current-Continuous -3 A
ICP Collector Current-Pulse -5 A
IBB Base Current-Continuous -0.5 A
Collector Power Dissipation
10
@ TC=25?
PC W
Collector Power Dissipation
1.3
@ Ta=25?
TJ Junction Temperature 150 ?
Storage Temperature Range -55~150 ?
Tstg
isc Website:www.iscsemi.cn
www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SB1217
ELECTRICAL CHARACTER |
4.1. 2sb1215.pdf Size:128K _sanyo 4.2. 2sb1216.pdf Size:126K _sanyo 4.3. 2sb1214.pdf Size:162K _sanyo  |
 | Ordering number:ENN2086B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1204/2SD1804
High-Current Switching Applications
Applications Package Dimensions
Relay drivers, high-speed inverters, converters, and
unit:mm
other general high-current switching applications.
2045B
[2SB1204/2SD1804]
6.5
Features
2.3
5.0
0.5
4
Low collector-to-emitter saturation voltage.
High current and high fT.
Excellent linearity of hFE.
Fast switching time.
0.85
Small and slim package making it easy to make
0.7
1.2
2SB1204/2SD1804-applied sets smaller.
0.6
0.5
1 : Base
1 2 3
2 : Collector
3 : Emitter
4 : Collector
2.3 2.3
SANYO : TP
unit:mm
2044B
[2SB1204/2SD1804]
6.5 2.3
5.0 0.5
4
0.5
0.85
1 2 3
0.6
1.2
1 : Base
0 to 0.2
2 : Collector
3 : Emitter
4 : Collector
2.3 2.3
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliabili |
4.4. 2sb1216_2sd1816.pdf Size:60K _sanyo  |
 | Ordering number:ENN2540A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1216/2SD1816
High-Current Switching Applications
Applications Package Dimensions
Suitable for relay drivers, high-speed inverters,
unit:mm
converters, and other general high-current switching
2045B
applications.
[2SB1216/2SD1816]
6.5
2.3
5.0
0.5
4
Features
Low collector-to-emitter saturation voltage.
Good linearity of hFE.
Small and slim package facilitating compactness of
0.85
sets.
0.7
1.2
High fT.
Fast switching time.
0.6
0.5
1 : Base
1 2 3
2 : Collector
3 : Emitter
4 : Collector
2.3 2.3
SANYO : TP
unit:mm
2044B
[2SB1216/2SD1816]
6.5 2.3
5.0 0.5
4
0.5
0.85
1 2 3
0.6
1.2
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
2.3 2.3
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, a |
4.5. 2sb1215_2sd1815.pdf Size:60K _sanyo  |
 | Ordering number:ENN2539B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1215/2SD1815
High-Current Switching Applications
Applications Package Dimensions
Relay drivers, high-speed inverters, converters, and
unit:mm
other general high-current switching applications.
2045B
[2SB1215/2SD1815]
6.5
Features
2.3
5.0
0.5
4
Low collector-to-emitter saturation voltage.
Excllent linearity of hFE.
Small-sized package permitting 2SB1215/2SD1815-
applied sets to be made small and slim.
0.85
High fT.
0.7
1.2
Fast switching time.
0.6 0.5
1 : Base
1 2 3
2 : Collector
3 : Emitter
4 : Collector
2.3 2.3
SANYO : TP
unit:mm
2044B
[2SB1215/2SD1815]
6.5 2.3
5.0 0.5
4
0.5
0.85
1 2 3
0.6
1.2
0 to 0.2 1 : Base
2 : Collector
3 : Emitter
2.3 2.3 4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life- |
4.6. 2sb1219.pdf Size:62K _panasonic  |
 | Transistors
2SB1219, 2SB1219A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification
0.3+0.1 0.15+0.10
0.05
0.0
Complementary to 2SD1820 and 2SD1820A
3
Features
Large collector current IC
1 2
S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine (0.65) (0.65)
1.30.1
packing.
2.00.2
10
Absolute Maximum Ratings Ta = 25C
Parameter Symbol Rating Unit
2SB1219 VCBO -30 V
Collector to
base voltage
2SB1219A -60
2SB1219 VCEO -25 V
Collector to
1: Base
2: Emitter EIAJ: SC-70
emitter voltage
2SB1219A -50
3: Collector S-Mini Type Package
Emitter to base voltage VEBO -5V
Marking Symbol
Peak collector current ICP -1A
2SB1219 : C
Collector current IC -500 mA
2SB1219A: D
Collector power dissipation PC 150 mW
Junction temperature Tj 150 C
Storage temperature Tstg -55 to +150 C
Electrical Characteristics Ta = 25C 3C
Parameter Symbol Conditions Min Typ Max U |
4.7. 2sb1218a_e.pdf Size:52K _panasonic  |
 | Transistor
2SB1218A
Silicon PNP epitaxial planer type
For general amplification
Unit: mm
Complementary to 2SD1819A
2.1 0.1
0.425 1.25 0.1 0.425
Features
High foward current transfer ratio hFE.
1
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
3
packing.
2
Absolute Maximum Ratings (Ta=25?C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 45 V
0.2 0.1
Collector to emitter voltage VCEO 45 V
Emitter to base voltage VEBO 7 V
Peak collector current ICP 200 mA
1:Base
2:Emitter EIAJ:SC70
Collector current IC 100 mA
3:Collector S-Mini Type Package
Collector power dissipation PC 150 mW
Marking symbol : B
Junction temperature Tj 150 ?C
Storage temperature Tstg 55 ~ +150 ?C
Electrical Characteristics (Ta=25?C)
Parameter Symbol Conditions min typ max Unit
ICBO VCB = 20V, IE = 0 0.1 A
Collector cutoff current
ICEO VCE = 10V, IB = 0 100 A
Collector to base vo |
4.8. 2sb1219_e.pdf Size:43K _panasonic  |
 | Transistor
2SB1219, 2SB1219A
Silicon PNP epitaxial planer type
For general amplification
Unit: mm
Complementary to 2SD1820 and 2SD1820A
Features
2.1 0.1
0.425 1.25 0.1 0.425
Large collector current IC.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
1
packing.
3
Absolute Maximum Ratings (Ta=25?C)
2
Parameter Symbol Ratings Unit
Collector to 2SB1219 30
VCBO V
base voltage 2SB1219A 60
Collector to 2SB1219 25
VCEO V
emitter voltage 2SB1219A 50
0.2 0.1
Emitter to base voltage VEBO 5 V
Peak collector current ICP 1 A
1:Base
Collector current IC 0.5 A
2:Emitter EIAJ:SC70
Collector power dissipation PC 150 mW 3:Collector S-Mini Type Package
Junction temperature Tj 150 ?C
Marking symbol : C(2SB1219)
Storage temperature Tstg 55 ~ +150 ?C
D(2SB1219A)
Electrical Characteristics (Ta=25?C)
Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = 20V, |
4.9. 2sb1218a.pdf Size:48K _panasonic  |
 | Transistor
2SB1218A
Silicon PNP epitaxial planer type
For general amplification
Unit: mm
Complementary to 2SD1819A
2.1 0.1
0.425 1.25 0.1 0.425
Features
High foward current transfer ratio hFE.
1
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
3
packing.
2
Absolute Maximum Ratings (Ta=25?C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 45 V
0.2 0.1
Collector to emitter voltage VCEO 45 V
Emitter to base voltage VEBO 7 V
Peak collector current ICP 200 mA
1:Base
2:Emitter EIAJ:SC70
Collector current IC 100 mA
3:Collector S-Mini Type Package
Collector power dissipation PC 150 mW
Marking symbol : B
Junction temperature Tj 150 ?C
Storage temperature Tstg 55 ~ +150 ?C
Electrical Characteristics (Ta=25?C)
Parameter Symbol Conditions min typ max Unit
ICBO VCB = 20V, IE = 0 0.1 A
Collector cutoff current
ICEO VCE = 10V, IB = 0 100 A
Collector to base vo |
4.10. 2sb1218a.pdf Size:102K _secos  |
 | 2SB1218A
-0.1A , -60V
PNP Silicon Epitaxial Paner Transistors
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
APPLICATIONS
SOT-323
? General Purpose Amplification
A
L
3
FEATURES
3
Top View C B
? High DC Current Gain
1
? Complementary to 2SD1819A
1 2
2
K E
CLASSIFICATION OF hFE
D
Product-Rank 2SB1218A-Q 2SB1218A-R 2SB1218A-S
H J
F G
Range 160~260 210~340 290~460
Millimeter Millimeter
REF. REF.
Marking BQ1 BR1 BS1
Min. Max. Min. Max.
A 1.80 2.20 G 0.100 REF.
B 1.80 2.45 H 0.525 REF.
C 1.15 1.35 J 0.08 0.25
PACKAGE INFORMATION D 0.80 1.10 K - -
E 1.20 1.40 L 0.650 TYP.
Package MPQ LeaderSize F 0.20 0.40
Collector
SOT-323 3K 7’ inch
??
??
Base
??
Emitter
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector-Base Voltage VCBO -45 V
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -7 V
Collector Current IC -100 mA
|
4.11. 2sb1218a.pdf Size:295K _htsemi  |
 | 2SB1 21 8 A
TRANSISTOR(PNP)
FEATURES
SOT–323
? High DC Current Gain
? Complementary to 2SD1819A
APPLICATIONS
? General Purpose Amplification
MAXIMUM RATINGS (Ta=25? unless otherwise noted)
1. BASE
Symbol Parameter Value Unit
2. EMITTER
V Collector-Base Voltage -45 V
CBO
3. COLLECTOR
VCEO Collector-Emitter Voltage -45 V
V Emitter-Base Voltage -7 V
EBO
I Collector Current -100 mA
C
P Collector Power Dissipation 150 mW
C
R Thermal Resistance From Junction To Ambient 833 ?/W
?JA
T Junction Temperature 150 ?
j
T Storage Temperature -55~+150 ?
stg
ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V I =-10µA, I =0 -45 V
(BR)CBO C E
Collector-emitter breakdown voltage V I =-2mA, I =0 -45 V
(BR)CEO C B
Emitter-base breakdown voltage V I =-10µA, I =0 -7 V
(BR)EBO E C
Collector cut-off current ICBO VCB=-20V, IE=0 -100 nA
Collector cut-o |
See also transistors datasheet: 2SB1215R
, 2SB1215S
, 2SB1215T
, 2SB1216
, 2SB1216Q
, 2SB1216R
, 2SB1216S
, 2SB1216T
, 2N4403
, 2SB1218
, 2SB1218A
, 2SB1219
, 2SB1219A
, 2SB122
, 2SB1220
, 2SB1221
, 2SB1222
. Keywords| 2SB1217
Datasheet | 2SB1217
Datenblatt | 2SB1217
RoHS | 2SB1217
Distributor | | 2SB1217
Application Notes | 2SB1217
Component | 2SB1217
Circuit | 2SB1217
Schematic | | 2SB1217
Equivalent | 2SB1217
Cross Reference | 2SB1217
Data Sheet | 2SB1217
Fiche Technique |
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