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2SB1249
Transistor Datasheet. Parameters and Characteristics. Type Designator: 2SB1249
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 10
Maximum collector-base voltage |Ucb|, V: 130
Maximum collector-emitter voltage |Uce|, V: 130
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.8
Maximum junction temperature (Tj), °C: 200
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 120
Noise Figure, dB: - Package of 2SB1249
transistor: TO218
2SB1249
Equivalent Transistors - Cross-Reference Search 2SB1249
PDF document for downloads:
4.1. 2sb1066m_2sb1243.pdf  Size:46K _rohm 4.2. 2sb1184_2sb1243_2sb1185.pdf Size:129K _rohm  |
 | Transistors
Power Transistor (*60V, *3A)
2SB1184 / 2SB1243 / 2SB1185
FFeatures FExternal dimensions (Units: mm)
1) Low VCE(sat).
VCE(sat) = *0.5V (Typ.)
(IC / IB = *2A / *0.2A)
2) Complements the 2SD1760 /
2SD1864 / 2SD1762.
FStructure
Epitaxial planar type
PNP silicon transistor
(96-128-B57)
223
Transistors 2SB1184 / 2SB1243 / 2SB1185
FAbsolute maximum ratings (Ta = 25_C)
FElectrical characteristics (Ta = 25_C)
FPackaging specifications and hFE
hFE values are classified as follows :
224
Transistors 2SB1184 / 2SB1243 / 2SB1185
FElectrical characteristic curves
225
Transistors 2SB1184 / 2SB1243 / 2SB1185
226
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4.3. 2sb1182_2sb1240.pdf Size:147K _rohm  |
 | Medium power transistor (?32V, ?2A)
2SB1182 / 2SB1240
?Features ?Dimensions (Unit : mm)
1) Low VCE(sat).
2SB1182 2SB1240
VCE(sat) = ?0.5V (Typ.)
2.5±0.2
6.8±0.2
(IC/IB = ?2A / ?0.2A)
2.3+0.2
6.5±0.2
-0.1
C0.5
2) Complements 2SD1758 / 2SD1862.
5.1+0.2
-0.1 0.5±0.1
0.65Max.
0.65±0.1
?Structure 0.75
0.9
0.5±0.1
Epitaxial planar type
0.55±0.1
PNP silicon transistor 2.3±0.2 2.3±0.2 (1) (2) (3)
1.0±0.2
2.54 2.54
1.05 0.45±0.1
(1) (2) (3)
(1) Base
(1) Emitter
ROHM : CPT3
(2) Collector
ROHM : ATV (2) Collector
EIAJ : SC-63
(3) Emitter
(3) Base
?Absolute maximum ratings (Ta=25?C)
Parameter Symbol Limits Unit
Collector-base voltage VCBO -40 V
Collector-emitter voltage VCEO -32 V
Emitter-base voltage VEBO -5 V
-2 A(DC)
IC
Collector current
1
-3 A (Pulse) ?
2SB1182 10 W (Tc=25°C)
Collector power
PC
dissipation
2SB1240 1 W 2
?
Junction temperature Tj 150 °C
Storage temperature Tstg -55 to 150 °C
1 Single pulse, Pw=100ms
?
2 Printed |
4.4. 2sb1260_2sb1181_2sb1241.pdf Size:140K _rohm  |
 | Power Transistor (?80V, ?1A)
2SB1260 / 2SB1181 / 2SB1241
?Features ?Dimensions (Unit : mm)
1) Hight breakdown voltage and high current.
2SB1260 2SB1181
BVCEO=??80V, IC = ??1A
2.3+0.2
6.5±0.2
2) Good hFE linearty.
C0.5
5.1+0.2
3) Low VCE(sat). 0.5±0.1
4.5+0.2
1.5±
Complements the 2SD1898 / 2SD1863 / 2SD1733.
1.6±0.1
0.65±0.1
0.75
(1) (2) (3)
0.9
0.4+0.1
0.55±0.1
0.4±0.1 0.5±0.1 2.3±0.2 2.3±0.2
0.4±0.1
1.0±0.2
?Structure
1.5±0.1 1.5±0.1
3.0±0.2
Epitaxial planar type
(1) (2) (3)
PNP silicon transistor
(1) Base
(1) Base
ROHM : CPT3
(2) Collector
ROHM : MPT3 (2) Collector
EIAJ : SC-63
(3) Emitter
EIAJ : SC-62 (3) Emitter
2SB1241
2.5±0.2
6.8±0.2
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05 0.45±0.1
(1) Emitter
ROHM : ATV (2) Collector
(3) Base
?Absolute maximum ratings (Ta=25?C)
Parameter Symbol Limits Unit
Collector-base voltage VCBO -80 V
Collector-emitter voltage VCEO -80 V
Emitter-base voltage VEBO -5 V
IC -1 A (DC)
Coll |
4.5. 2sb1188_2sb1182_2sb1240_2sb822_2sb1277_2sb911m.pdf Size:130K _rohm  |
 | Transistors
Medium power Transistor(*32V,*2A)
2SB1188 / 2SB1182 / 2SB1240 /
2SB822 / 2SB1277 / 2SB911M
FFeatures FExternal dimensions (Unit: mm)
1) Low VCE(sat).
VCE(sat) = *0.5V (Typ.)
(IC / IB = *2A / *0.2A)
2) Complements the 2SD1766 /
2SD1758 / 2SD1862 / 2SD1189F /
2SD1055 / 2SD1919 / SD1227M.
FStructure
Epitaxial planar type
PNP silicon transistor
(96-131-B24)
215
2SB1188 / 2SB1182 / 2SB1240 /
Transistors
Transistors
2SB822 / 2SB1277 / 2SB911M
FAbsolute maximum ratings (Ta = 25_C)
FElectrical characteristics (Ta = 25_C)
216
2SB1188 / 2SB1182 / 2SB1240 /
Transistors
Transistors
2SB822 / 2SB1277 / 2SB911M
FPackaging specifications and hFE
hFE values are classified as follows :
FElectrical characteristic curves
217
2SB1188 / 2SB1182 / 2SB1240 /
Transistors
Transistors
2SB822 / 2SB1277 / 2SB911M
218
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4.6. 2sb1184_2sb1243.pdf Size:244K _rohm  |
 | Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747
2SB1184 / 2SB1243
Transistors
Power Transistor (-60V, -3A)
2SB1184 / 2SB1243
External dimensions (Units : mm)
Features
1) Low VCE(sat).
2SB1184 2SB1243
VCE(sat) = -0.5V (Typ.)
2.5±0.2
6.8±0.2
2.3 +0.2
6.5±0.2
-0.1
C0.5
(IC/IB = -2A / -0.2A)
5.1 +0.2
-0.1 0.5±0.1
2) Complements the 2SD1760 / 2SD1864.
0.65Max.
0.65±0.1
0.75
0.9
0.55±0.1
0.5±0.1
2.3±0.2 2.3±0.2
1.0±0.2
Structure
(1) (2) (3)
Epitaxial planar type
2.54 2.54
1.05 0.45±0.1
(1) (2) (3)
PNP silicon transistor
(1) Base (1) Emitter
ROHM : CPT3 (2) Collector ROHM : ATV (2) Collector
EIAJ : SC-63 (3) Emitter (3) Base
Absolute maximum ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-base voltage VCBO -60 V
Collector-emitter voltage VCEO -50 V
Emitter-base voltage VEBO -5 V
IC -3 A (DC)
Collector current
ICP -4.5 A (Pulse) ?1
1 W
Collector power
2SB1184
15 W (TC=25°C)
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4.7. 2sb1243.pdf Size:141K _rohm  |
 | Power Transistor (?60V, ?3A)
2SB1243
?Features ?Dimensions (Unit : mm)
1) Low VCE(sat).
2SB1243
VCE(sat) = -0.5V (Typ.)
2.5±0.2
(IC/IB = -2A / -0.2A)
6.8±0.2
2) Complements the 2SD1864.
?Structure
0.65Max.
Epitaxial planar type
PNP silicon transistor
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05 0.45±0.1
(1) Emitter
ROHM : ATV (2) Collector
(3) Base
?Absolute maximum ratings (Ta=25?C)
Parameter Symbol Limits Unit
Collector-base voltage VCBO -60 V
Collector-emitter voltage VCEO -50 V
Emitter-base voltage VEBO -5 V
Collector current IC -3 A (DC)
?1
Collector power dissipation PC 1W
Tj 150 °C
Junction temperature
Tstg -55 to 150 °C
Storage temperature
?1 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
?Electrical characteristics (Ta=25?C)
Parameter Symbol Min. Typ. Max. Unit Conditions
IC= -50µA
Collector-base breakdown voltage BVCBO -60 - - V
IC= -1mA
Collector-emitter breakdown voltage BVCEO -50 - - V
IE= -50µA
Emi |
4.8. 2sb1241.pdf Size:80K _rohm  |
 | 2SB1260 / 2SB1181 / 2SB1241
Transistors
Power Transistor (-80V, -1A)
2SB1260 / 2SB1181 / 2SB1241
Features External dimensions (Units : mm)
1) High breakdown voltage and high
2SB1260 2SB1181
current.
2.3+0.2
6.5±0.2
-0.1
C0.5
BVCEO= -80V, IC=-1A
5.1+0.2
-0.1 0.5±0.1
4.5+0.2
-0.1
2) Good hFE linearity.
1.5+0.2
1.6±0.1 -0.1
3) Low VCE(sat).
4) Complements the 2SD1898 /
0.65±0.1
0.75
2SD1863 / 2SD1733.
(1) (2) (3)
0.9
0.4+0.1
-0.05 0.55±0.1
0.4±0.1 0.5±0.1 2.3±0.2 2.3±0.2
0.4±0.1
1.0±0.2
1.5±0.1 1.5±0.1
3.0±0.2
Structure
(1) (2) (3)
Epitaxial planar type (1) Base
(1) Base
ROHM : CPT3
(2) Collector
ROHM : MPT3 Abbreviated (2) Collector
PNP silicon transistor
EIAJ : SC-63
(3) Emitter
EIAJ : SC-62 symbol: BH (3) Emitter
?
2SB1241
2.5±0.2
6.8±0.2
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05 0.45±0.1
(1) Emitter
ROHM : ATV (2) Collector
(3) Base
* Denotes hFE
Absolute maximum ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-b |
4.9. 2sb1244_2sb1245.pdf Size:356K _hitachi See also transistors datasheet: 2SB1241
, 2SB1242
, 2SB1243
, 2SB1244
, 2SB1245
, 2SB1246
, 2SB1247
, 2SB1248
, C102
, 2SB125
, 2SB1250
, 2SB1251
, 2SB1252
, 2SB1253
, 2SB1254
, 2SB1255
, 2SB1256
. Keywords| 2SB1249
Datasheet | 2SB1249
Datenblatt | 2SB1249
RoHS | 2SB1249
Distributor | | 2SB1249
Application Notes | 2SB1249
Component | 2SB1249
Circuit | 2SB1249
Schematic | | 2SB1249
Equivalent | 2SB1249
Cross Reference | 2SB1249
Data Sheet | 2SB1249
Fiche Technique |
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