2SB125 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB125

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 41

Maximum collector-base voltage |Ucb|, V: 36

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 25

Maximum collector current |Ic max|, A: 15

Maximum junction temperature (Tj), °C: 75

Transition frequency (ft), MHz: 0.18

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 70

Noise Figure, dB: -

Package of 2SB125 transistor: TO53

2SB125 Equivalent Transistors - Cross-Reference Search

2SB125 PDF document for downloads:

1.1. 2sb1252.pdf Size:75K _panasonic

Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington For power amplification Unit: mm 10.0± 0.2 4.2± 0.2 Complementary to 2SD1892 5.5± 0.2 2.7± 0.2 Features ? 3.1± 0.1 Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < 2.5V Full-pack package which can be installed to the heat sink with 1.3± 0.2 1.4± 0.1 one screw +0.2 0.5 –0.1 0.8± 0.1 Absolute Maximum Ratings (TC=25?C) 2.54± 0.25 Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V 5.08± 0.5 1 2 3 Collector to emitter voltage VCEO –100 V 1:Base 2:Collector Emitter to base voltage VEBO –5 V 3:Emitter TO–220 Full Pack Package(a) Peak collector current ICP –8 A Collector current IC –5 A Internal Connection Collector power TC=25° C 45 C PC W dissipation Ta=25° C 2 B Junction temperature Tj 150 ?C Storage temperature Tstg –55 to +150 ?C E Electrical Characteristics (TC=25?C) Param

1.2. 2sb1253.pdf Size:74K _panasonic

Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Unit: mm Complementary to 2SD1893 15.0± 0.3 5.0± 0.2 11.0± 0.2 3.2 Features Optimum for 40W HiFi output ? 3.2± 0.1 High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < –2.5V Full-pack package which can be installed to the heat sink with 2.0± 0.2 2.0± 0.1 one screw 1.1± 0.1 0.6± 0.2 Absolute Maximum Ratings (TC=25?C) 5.45± 0.3 10.9± 0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V 1 2 3 Collector to emitter voltage VCEO –110 V 1:Base 2:Collector Emitter to base voltage VEBO –5 V 3:Emitter TOP–3 Full Pack Package(a) Peak collector current ICP –10 A Collector current IC –6 A Internal Connection Collector power TC=25° C 50 C PC W dissipation Ta=25° C 3 B Junction temperature Tj 150 ?C Storage temperature Tstg –55 to +150 ?C E Electrical Characteristics (TC=25?C) Parameter Symbol

1.3. 2sb1255.pdf Size:74K _panasonic

Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington For power amplification Unit: mm Complementary to 2SD1895 15.0± 0.3 5.0± 0.2 11.0± 0.2 3.2 Features Optimum for 90W HiFi output ? 3.2± 0.1 High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < –2.5V Full-pack package which can be installed to the heat sink with 2.0± 0.2 2.0± 0.1 one screw 1.1± 0.1 0.6± 0.2 Absolute Maximum Ratings (TC=25?C) 5.45± 0.3 10.9± 0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO –160 V 1 2 3 Collector to emitter voltage VCEO –140 V 1:Base 2:Collector Emitter to base voltage VEBO –8 V 3:Emitter TOP–3 Full Pack Package(a) Peak collector current ICP –12 A Collector current IC –15 A Internal Connection Collector power TC=25° C 100 C PC W dissipation Ta=25° C 3 B Junction temperature Tj 150 ?C Storage temperature Tstg –55 to +150 ?C E Electrical Characteristics (TC=25?C) Parameter Symb

1.4. 2sb1254.pdf Size:74K _panasonic

Power Transistors 2SB1254 Silicon PNP epitaxial planar type Darlington For power amplification Unit: mm Complementary to 2SD1894 15.0± 0.3 5.0± 0.2 11.0± 0.2 3.2 Features Optimum for 60W HiFi output ? 3.2± 0.1 High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat): < –2.5V Full-pack package which can be installed to the heat sink with 2.0± 0.2 2.0± 0.1 one screw 1.1± 0.1 0.6± 0.2 Absolute Maximum Ratings (TC=25?C) 5.45± 0.3 10.9± 0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO –160 V 1 2 3 Collector to emitter voltage VCEO –140 V 1:Base 2:Collector Emitter to base voltage VEBO –5 V 3:Emitter TOP–3 Full Pack Package(a) Peak collector current ICP –12 A Collector current IC –7 A Internal Connection Collector power TC=25° C 70 C PC W dissipation Ta=25° C 3 B Junction temperature Tj 150 ?C Storage temperature Tstg –55 to +150 ?C E Electrical Characteristics (TC=25?C) Parameter Symbol Conditions min

1.5. 2sb1257.pdf Size:30K _sanken-ele

E (2k?)(650?) B Darlington 2SB1257 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) Application : Driver for Solenoid, Relay and Motor and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) Symbol Ratings Symbol Conditions Ratings ±0.2 Unit Unit 5.5 ±0.2 15.6 ±0.2 3.45 VCBO –60 ICBO VCB=–60V –10max V µ A VCEO –60 IEBO VEB=–6V –10max V µ A VEBO –6 V(BR)CEO IC=–10mA –60min V V ±0.2 o3.3 IC –4(Pulse–6) hFE VCE=–4V, IC=–3A 2000min A a b IB VCE(sat) IC=–3A, IB=–6mA –1.5max –1 V A PC VBE(sat) IC=–3A, IB=–6mA –2max 25(Tc=25°C) V W 1.75 0.8 Tj fT VCE=–12V, IE=0.2A 150typ 150 MHz °C 2.15 Tstg –55 to +150 VCB=–10V, f=1MHz 75typ COB pF °C 1.05+0.2 -0.1 ±0.1 ±0.1 0.65+0.2 3.35 5.45 5.45 -0.1 Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5 Weight : Approx 2.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (mA

1.6. 2sb1258.pdf Size:29K _sanken-ele

E (3k?)(100?) B Darlington 2SB1258 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785) Application : Driver for Solenoid, Relay and Motor and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) Symbol Ratings Symbol Conditions Ratings Unit Unit ±0.2 4.2 ±0.2 10.1 c0.5 2.8 VCBO –100 ICBO VCB=–100V –10max µ A V VCEO –100 IEBO VEB=–6V –10max µ A V VEBO –6 V(BR)CEO IC=–10mA –100min V V ±0.2 o3.3 a IC –6(Pulse–10) hFE VCE=–2V, IC=–3A 1000min A b IB –1 VCE(sat) IC=–3A, IB=–6mA –1.5max V A PC 30(Tc=25°C) VBE(sat) IC=–3A, IB=–6mA –2max V W ±0.15 Tj fT VCE=–12V, IE=0.2A 100typ MHz 1.35 150 °C ±0.15 1.35 Tstg –55 to +150 VCB=–10V, f=1MHz pF COB 100typ °C 0.85+0.2 -0.1 0.45+0.2 2.4 -0.1 ±0.2 2.54 2.54 Typical Switching Characteristics (Common Emitter) ±0.2 2.2 Weight : Approx 2.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (

1.7. 2sb1259.pdf Size:30K _sanken-ele

E (3k?)(100?) B Darlington 2SB1259 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081) Application : Driver for Solenoid, Relay and Motor and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) Symbol Ratings Unit Symbol Conditions Ratings Unit ±0.2 4.2 ±0.2 10.1 c0.5 2.8 VCBO –120 V ICBO VCB=–120V –10max µ A VCEO –120 V IEBO VEB=–6V –10max mA VEBO –6 V V(BR)CEO IC=–10mA –120min V ±0.2 o3.3 a IC –10(Pulse–15) A hFE VCE=–4V, IC=–5A 2000min b IB –1 A VCE(sat) IC=–5A, IB=–10mA –1.5max V PC 30(Tc=25°C) W VBE(sat) IC=–5A, IB=–10mA –2.0max V ±0.15 1.35 Tj fT VCE=–12V, IE=0.2A 100typ MHz 150 °C ±0.15 1.35 Tstg –55 to +150 °C VCB=–10V, f=1MHz 145typ pF COB 0.85+0.2 -0.1 0.45+0.2 2.4 -0.1 ±0.2 2.54 2.54 Typical Switching Characteristics (Common Emitter) ±0.2 2.2 Weight : Approx 2.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (mA

1.8. 2sb1257.pdf Size:114K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1257 DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SD2014 Ў¤ High DC current gain Ў¤ DARLINGTON APPLICATIONS Ў¤ Driver for solenoid ,relay and motor and general purpose PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Fig.1 simplified outline (TO-220F) and symbol HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector dissipation Junction temperature Storage temperature SEM GE Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE -60 -60 -6 -4 -6 -1 UNIT V V V A A A W Ўж Ўж TC=25Ўж 25 150 -55~150

1.9. 2sb1258.pdf Size:114K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1258 DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SD1785 Ў¤ High DC current gain Ў¤ DARLINGTON APPLICATIONS Ў¤ Driver for solenoid ,relay and motor and general purpose PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Fig.1 simplified outline (TO-220F) and symbol HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current SEM GE Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE -100 -100 -6 -6 -10 -1 UNIT V V V A A A W Ўж Ўж Collector power dissipation Junction temperature Storage temperature TC=25Ўж 30 150 -55~150

1.10. 2sb1255.pdf Size:129K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION Ў¤ With TO-3PFa package Ў¤ Optimum for 90W Hi-Fi output Ў¤ High foward current transfer ratio hFE Ў¤ Low collector-emitter saturation voltage Ў¤ Complement to type 2SD1895 APPLICATIONS Ў¤ Power amplification PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE -160 -140 -8 -15 -12 UNIT V V V A A Open collector TC=25Ўж PC Collector power dissipation 100 W 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 Ўж Ўж

1.11. 2sb1254.pdf Size:122K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1254 DESCRIPTION Ў¤ With TO-3PFa package Ў¤ Optimum for 60W HiFi output Ў¤ High foward current transfer ratio Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SD1894 APPLICATIONS Power amplification Ў¤ PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE -160 -140 -5 -7 -12 UNIT V V V A A Open collector TC=25Ўж PC Collector power dissipation Ta=25Ўж Tj Tstg Junction temperature Storage temperature 70 W 3 150 -55~150 Ўж Ўж

See also transistors datasheet: 2SB1242 , 2SB1243 , 2SB1244 , 2SB1245 , 2SB1246 , 2SB1247 , 2SB1248 , 2SB1249 , 9013 , 2SB1250 , 2SB1251 , 2SB1252 , 2SB1253 , 2SB1254 , 2SB1255 , 2SB1256 , 2SB1257 .

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