2SB1274R Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB1274R

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 30

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 3

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 60

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2SB1274R transistor: TO220

2SB1274R Equivalent Transistors - Cross-Reference Search

2SB1274R PDF document for downloads:

3.1. 2sb1274.pdf Size:34K _sanyo

Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications Package Dimensions • General power amplifier. unit : mm 2041A [2SB1274/2SD1913] 4.5 10.0 2.8 Features 3.2 • Wide ASO (Adoption of MBIT process). • Low saturation voltage. • High reliability. • High breakdown voltage. • Micaless package facilitating mounting. 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Base 2.55 2.55 2 : Collector Specifications 3 : Emitter ( ):2SB1274 2.55 2.55 SANYO : TO-220ML Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)60 V Collector-to-Emitter Voltage VCEO (-)60 V Emitter-to-Base Voltage VEBO (-)6 V Collector Current IC (-)3 A Collector Current (Pulse) ICP (-)8 A 2 W Collector Dissipation PC Tc=25°C20 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Electrical Characteristics at

3.2. 2sb1274.pdf Size:154K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1274 DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SD1913 Ў¤ High reliability. Ў¤ High breakdown voltage Ў¤ Low saturation voltage. Ў¤ Wide area of safe operation APPLICATIONS Ў¤ 60V/3A low-frequency power amplifier Ў¤ General power amplifier applications PINNING PIN 1 2 3 Emitter Collector DESCRIPTION Base PARAMETER Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak SEM GE Open base OND IC TOR UC VALUE -60 -60 -6 -3 -8 CONDITIONS UNIT V V V A A Open emitter Open collector TC=25Ўж PC Collector dissipation 20 W 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 Ўж Ўж

3.3. 2sb1274.pdf Size:302K _lge

2SB1274(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector- Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 2 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =-1mA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-5mA, IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -6 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-4V,

See also transistors datasheet: 2SB1272R , 2SB1272S , 2SB1273 , 2SB1273Q , 2SB1273R , 2SB1273S , 2SB1274 , 2SB1274Q , OC44 , 2SB1274S , 2SB1275 , 2SB1276 , 2SB1277 , 2SB1278 , 2SB1279 , 2SB127A , 2SB128 .

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