2SB1286 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB1286

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 25

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 2

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 2000

Noise Figure, dB: -

Package of 2SB1286 transistor: TO220

2SB1286 Equivalent Transistors - Cross-Reference Search

2SB1286 PDF document for downloads:

1.1. 2sb1286.pdf Size:227K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1286 DESCRIPTION ·High DC Current Gain- :hFE = 1000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- :V(BR)CEO = -100V(Min) ·Low Collector-Emitter Saturation Voltage :VCE(sat) = -1.5V(Max)@ IC= -1A ·Complement to Type 2SD1646 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A Collector Power Dissipation PC TC=25? 25 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -55~150 ? isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1286 ELECTRICAL CHARACTERISTICS TC=

4.1. 2sb1287_1-2.pdf Size:63K _rohm

4.2. 2sb1288_e.pdf Size:41K _panasonic

Transistor 2SB1288 Silicon PNP epitaxial planer type For low-frequency power amplification Unit: mm For DC-DC converter 5.0± 0.2 4.0± 0.2 For stroboscope Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.7± 0.1 Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25?C) +0.15 +0.15 0.45 –0.1 0.45 –0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –7 V 1 2 3 1:Emitter 2:Collector Peak collector current ICP –10 A 2.54± 0.15 3:Base Collector current IC –5 A TO–92NL Package Collector power dissipation PC 1 W Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = –10V, IE = 0 –100 nA Emitter cutoff current IEBO VEB = –5V, IC = 0 –100 nA Collector to emitter voltage VCEO

4.3. 2sb1288.pdf Size:37K _panasonic

Transistor 2SB1288 Silicon PNP epitaxial planer type For low-frequency power amplification Unit: mm For DC-DC converter 5.0± 0.2 4.0± 0.2 For stroboscope Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.7± 0.1 Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25?C) +0.15 +0.15 0.45 –0.1 0.45 –0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –7 V 1 2 3 1:Emitter 2:Collector Peak collector current ICP –10 A 2.54± 0.15 3:Base Collector current IC –5 A TO–92NL Package Collector power dissipation PC 1 W Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = –10V, IE = 0 –100 nA Emitter cutoff current IEBO VEB = –5V, IC = 0 –100 nA Collector to emitter voltage VCEO

4.4. 2sb1282.pdf Size:321K _shindengen

SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1282 Case : ITO-220 Unit : mm (TP4J10) 4A PNP RATINGS

4.5. 2sb1283.pdf Size:281K _shindengen

SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1283 Case : ITO-220 Unit : mm (TP7J10) A PNP RATINGS

4.6. 2sb1285.pdf Size:325K _shindengen

SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1285 Case : MTO-3P Unit : mm (T15J10) -15A PNP RATINGS

4.7. 2sb1284.pdf Size:321K _shindengen

SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1284 Case : ITO-220 Unit : mm (TP10J10) A PNP RATINGS

4.8. 2sb1287.pdf Size:112K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1287 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High DC current gain Ў¤ Low saturation voltage Ў¤ Complement to type 2SD1765 Ў¤ DARLINGTON APPLICATIONS Ў¤ For low frequency power amplifier and power driver applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM HAN C PARAMETER Open base Fig.1 simplified outline (TO-220Fa) and symbol IN Collector-base voltage SEM GE CONDITIONS OND IC TOR UC VALUE -100 -100 -8 -2 -3 UNIT V V V A A Open emitter Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Open collector Ta=25Ўж PC Collector power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature 2 W 20 150 -55~150 Ўж Ўж

4.9. 2sb1289.pdf Size:239K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1289 DESCRIPTION ·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1580 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -10 A Total Power Dissipation PC @ TC=25? 40 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1289 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter

See also transistors datasheet: 2SB127A , 2SB128 , 2SB1280 , 2SB1281 , 2SB1282 , 2SB1283 , 2SB1284 , 2SB1285 , 100DA025D , 2SB1287 , 2SB1288 , 2SB1289 , 2SB128A , 2SB129 , 2SB1290 , 2SB1291 , 2SB1292 .

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