2SB1295-6 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB1295-6

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 15

Maximum collector-emitter voltage |Uce|, V: 15

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.8

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 300

Collector capacitance (Cc), pF: 15

Forward current transfer ratio (hFE), min: 200

Noise Figure, dB: -

Package of 2SB1295-6 transistor: TO236

2SB1295-6 Equivalent Transistors - Cross-Reference Search

2SB1295-6 PDF document for downloads:

3.1. 2sb1295.pdf Size:114K _sanyo

4.1. 2sb1296.pdf Size:122K _sanyo

4.2. 2sb1292_1-2.pdf Size:58K _rohm

4.3. 2sb1292.pdf Size:39K _rohm

2SB1292 Transistors Transistors 2SB1832 (94L-316-B75) (94L-872-D75) 286

4.4. 2sb1294.pdf Size:154K _rohm

This Material Copyrighted By Its Respective Manufacturer  This Material Copyrighted By Its Respective Manufacturer  This Material Copyrighted By Its Respective Manufacturer

4.5. 2sb1290.pdf Size:38K _rohm

2SB1290 Transistors Transistors 2SD1833 (96-630-B55) (96-741-D55) 285

4.6. 2sb1290_1-2.pdf Size:57K _rohm

4.7. 2sb1297.pdf Size:37K _panasonic

Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SD1937 5.0± 0.2 4.0± 0.2 Features Extremely satisfactory linearity of the forward current transfer ratio hFE. High transition frequency fT. Makes up a complementary pair with 2SD1937, which is opti- 0.7± 0.1 mum for the pre-driver stage of a 40 to 60W output amplifier. Absolute Maximum Ratings (Ta=25?C) +0.15 +0.15 0.45 –0.1 0.45 –0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collector to base voltage VCBO –120 V Collector to emitter voltage VCEO –120 V 1 2 3 1:Emitter Emitter to base voltage VEBO –5 V 2:Collector 2.54± 0.15 Peak collector current ICP –1 A 3:Base TO–92NL Package Collector current IC – 0.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector to emitter voltage VCEO IC = –0.1mA,

4.8. 2sb1297_e.pdf Size:41K _panasonic

Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SD1937 5.0± 0.2 4.0± 0.2 Features Extremely satisfactory linearity of the forward current transfer ratio hFE. High transition frequency fT. Makes up a complementary pair with 2SD1937, which is opti- 0.7± 0.1 mum for the pre-driver stage of a 40 to 60W output amplifier. Absolute Maximum Ratings (Ta=25?C) +0.15 +0.15 0.45 –0.1 0.45 –0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collector to base voltage VCBO –120 V Collector to emitter voltage VCEO –120 V 1 2 3 1:Emitter Emitter to base voltage VEBO –5 V 2:Collector 2.54± 0.15 Peak collector current ICP –1 A 3:Base TO–92NL Package Collector current IC – 0.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector to emitter voltage VCEO IC = –0.1mA,

4.9. 2sb1299.pdf Size:53K _panasonic

Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification Unit: mm Complementary to 2SD1273 10.0± 0.2 4.2± 0.2 5.5± 0.2 2.7± 0.2 Features High foward current transfer ratio hFE ? 3.1± 0.1 Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 1.3± 0.2 1.4± 0.1 Absolute Maximum Ratings (TC=25?C) +0.2 0.5 –0.1 Parameter Symbol Ratings Unit 0.8± 0.1 Collector to base voltage VCBO –60 V 2.54± 0.25 Collector to emitter voltage VCEO –60 V 5.08± 0.5 Emitter to base voltage VEBO –6 V 1 2 3 Peak collector current ICP –6 A 1:Base Collector current IC –3 A 2:Collector 3:Emitter Base current IB –1 A TO–220 Full Pack Package(a) Collector power TC=25° C 40 PC W dissipation Ta=25° C 2 Junction temperature Tj 150 ?C Storage temperature Tstg –55 to +150 ?C Electrical Characteristics (TC=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = –60V, IE = 0

4.10. 2sb1292.pdf Size:128K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1292 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Low saturation voltage Ў¤ Complement to type 2SD1832 Ў¤ Excellent DC current gain characteristics Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For use in low frequency power amplifier applications,power drivers and DC-DC converters PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM Base HAN C PARAMETER IN Collector-base voltage SEM GE Open base CONDITIONS OND IC TOR UC VALUE -60 -60 -5 -5 -10 UNIT V V V A A Open emitter Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Open collector TC=25Ўж PC Collector power dissipation Ta=25Ўж Tj Tstg Junction temperature Storage temperature 30 W 2 150 -55~150 Ўж Ўж

4.11. 2sb1294.pdf Size:234K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1294 DESCRIPTION ·High Collector Current:: IC= -5A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1897 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A Total Power Dissipation PC @ TC=25? 30 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1294 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitte

4.12. 2sb1291.pdf Size:238K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1291 DESCRIPTION ·High Collector Current:: IC= -5A ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1720 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A Total Power Dissipation PC @ TC=25? 40 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1291 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter

4.13. 2sb1293.pdf Size:239K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1293 DESCRIPTION ·High Collector Current:: IC= -5A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1896 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A Total Power Dissipation PC @ TC=25? 40 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1293 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitte

See also transistors datasheet: 2SB129 , 2SB1290 , 2SB1291 , 2SB1292 , 2SB1293 , 2SB1294 , 2SB1295 , 2SB1295-5 , 2SC114 , 2SB1295-7 , 2SB1296 , 2SB1296S , 2SB1296T , 2SB1296U , 2SB1297 , 2SB1298 , 2SB1299 .

Keywords