2SB1327 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB1327

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 58

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 5

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 120

Noise Figure, dB: -

Package of 2SB1327 transistor: TO61

2SB1327 Equivalent Transistors - Cross-Reference Search

2SB1327 PDF document for downloads:

4.1. 2sb1325.pdf Size:44K _sanyo

4.2. 2sb1323.pdf Size:81K _sanyo

4.3. 2sb1324.pdf Size:85K _sanyo

4.4. 2sb1386_2sb1412_2sb1326.pdf Size:93K _rohm

2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (-20V, -5A) 2SB1386 / 2SB1412 / 2SB1326 External dimensions (Units : mm) Features 1) Low VCE(sat). 2SB1386 2SB1412 VCE(sat) = -0.35V (Typ.) 2.3+0.2 6.5�0.2 -0.1 4.5+0.2 C0.5 -0.1 5.1+0.2 (IC/IB = -4A / -0.1A) 1.5+0.2 -0.1 0.5�0.1 1.6�0.1 -0.1 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / (1) (2) (3) 0.75 0.65�0.1 0.4+0.1 -0.05 0.9 2SD2118 / 2SD2097. 0.4�0.1 0.5�0.1 0.4�0.1 0.55�0.1 1.5�0.1 1.5�0.1 2.3�0.2 2.3�0.2 1.0�0.2 3.0�0.2 (1) (2) (3) Structure (1) Base (1) Base ROHM : MPT3 (2) Collector ROHM : CPT3 Epitaxial planar type (2) Collector EIAJ : SC-62 (3) Emitter EIAJ : SC-63 (3) Emitter PNP silicon transistor Abbreviated symbol: BH? 2SB1326 2.5�0.2 6.8�0.2 0.65Max. 0.5�0.1 (1) (2) (3) 2.54 2.54 1.05 0.45�0.1 (1) Emitter ROHM : ATV (2) Collector (3) Base ? Denotes hFE + 0.3 - 0.1 1.5 � 0.3 + 0.2 0.9 1.5 5.5 4.0 � 0.3 2.

4.5. 2sb1321a.pdf Size:68K _panasonic

Transistors 2SB1321A Silicon PNP epitaxial planer type Unit: mm 6.9�0.1 1.05 2.5�0.1 For general amplification �0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SD1992A Features 0.65 max. � Large collector power dissipation PC (600 mW) � Allowing supply with the radial taping +0.1 0.45-0.05 2.5�0.5 2.5�0.5 Absolute Maximum Ratings Ta = 25�C 1 2 3 Parameter Symbol Rating Unit Collector to base voltage VCBO -60 V Note) In addition to the 1: Emitter Collector to emitter voltage VCEO -50 V lead type shown in 2: Collector the upper figure, 3: Base Emitter to base voltage VEBO -7V the type as shown MT1 Type Package Peak collector current ICP -1A in the lower figure is also available. Collector current IC -500 mA Collector power dissipation PC 600 mW Junction temperature Tj 150 �C 1.2�0.1 Storage temperature Tstg -55 to +150 �C 0.65 max. 0.45+0.1 -0.05 (HW Type) Electrical Characteristics Ta = 25�C � 3�C Parameter Symbol Conditions Min Typ Max Unit Colle

4.6. 2sb1321a_e.pdf Size:52K _panasonic

Transistor 2SB1321A Silicon PNP epitaxial planer type For low-frequency output amplification and driver amplification Unit: mm Complementary to 2SD1992A 6.9� 0.1 1.05 2.5� 0.1 � 0.05 (1.45) 0.7 4.0 0.8 Features Allowing supply with the radial taping. Large collector power dissipation PC. (600mW) 0.65 max. +0.1 0.45�0.05 Absolute Maximum Ratings (Ta=25?C) 2.5� 0.5 2.5� 0.5 Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO �60 V Collector to emitter voltage VCEO �50 V Emitter to base voltage VEBO �7 V Note: In addition to the 1:Emitter lead type shown in 2:Collector Peak collector current ICP �1 A the upper figure, the 3:Base Collector current IC �500 mA type as shown in MT1 Type Package the lower figure is Collector power dissipation PC 600 mW also available. Junction temperature Tj 150 ?C Storage temperature Tstg �55 ~ +150 ?C 1.2� 0.1 0.65 max. 0.45+0.1 �0.05 (HW type) Electrical Characteristics (Ta=25?C) Parameter Symbol Cond

4.7. 2sb1322a_e.pdf Size:54K _panasonic

Transistor 2SB1322A Silicon PNP epitaxial planer type For low-frequency power amplification Unit: mm Complementary to 2SD1994A 2.5� 0.1 1.05 6.9� 0.1 � 0.05 (1.45) 0.7 4.0 0.8 Features Allowing supply with the radial taping. 0.65 max. Absolute Maximum Ratings (Ta=25?C) +0.1 0.45�0.05 Parameter Symbol Ratings Unit 2.5� 0.5 2.5� 0.5 Collector to base voltage VCBO �60 V 1 2 3 Collector to emitter voltage VCEO �50 V Emitter to base voltage VEBO �5 V Peak collector current ICP �1.5 A Note: In addition to the 1:Emitter lead type shown in 2:Collector Collector current IC �1 A the upper figure, the 3:Base Collector power dissipation PC* 1 W type as shown in MT2 Type Package the lower figure is Junction temperature Tj 150 ?C also available. Storage temperature Tstg �55 ~ +150 ?C * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 1.2� 0.1 0.65 max. 0.45+0.1 �0.05 (HW type) Electrical

4.8. 2sb1320.pdf Size:73K _panasonic

Transistors 2SB1320A Silicon PNP epitaxial planer type Unit: mm For general amplification 6.9�0.1 1.05 2.5�0.1 �0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SD1991A Features 0.65 max. � High forward current transfer ratio hFE � Allowing supply with the radial taping +0.1 0.45-0.05 2.5�0.5 2.5�0.5 Absolute Maximum Ratings Ta = 25�C 1 2 3 Parameter Symbol Rating Unit Collector to base voltage VCBO -60 V Note) In addition to the 1: Emitter Collector to emitter voltage VCEO -50 V lead type shown in 2: Collector the upper figure, 3: Base Emitter to base voltage VEBO -7V the type as shown MT1 Type Package Peak collector current ICP -200 mA in the lower figure is also available. Collector current IC -100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 �C 1.2�0.1 Storage temperature Tstg -55 to +150 �C 0.65 max. 0.45+0.1 -0.05 (HW Type) Electrical Characteristics Ta = 25�C � 3�C Parameter Symbol Conditions Min Typ Max Unit Collect

4.9. 2sb1322a.pdf Size:70K _panasonic

Transistors 2SB1322A Silicon PNP epitaxial planer type Unit: mm 2.5�0.1 1.05 For low-frequency power amplification 6.9�0.1 �0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SD1994A Features 0.65 max. � Allowing supply with the radial taping +0.1 0.45-0.05 Absolute Maximum Ratings Ta = 25�C 2.5�0.5 2.5�0.5 1 2 3 Parameter Symbol Rating Unit Collector to base voltage VCBO -60 V Collector to emitter voltage VCEO -50 V Note) In addition to the 1: Emitter Emitter to base voltage VEBO -5V lead type shown in 2: Collector the upper figure, 3: Base Peak collector current ICP -1.5 A the type as shown MT2 Type Package Collector current IC -1A in the lower figure is also available. Collector power dissipation * PC 1W Junction temperature Tj 150 �C Storage temperature Tstg -55 to +150 �C 1.2�0.1 0.65 Note) Printed circuit board: Copper foil area of 1 cm2 or more, and the *: max. board thickness of 1.7 mm for the collector portion 0.45+0.1 -0.05 (HW Type) Electr

4.10. 2sb1320a_e.pdf Size:56K _panasonic

Transistor 2SB1320A Silicon PNP epitaxial planer type For general amplification Unit: mm Complementary to 2SD1991A 6.9� 0.1 1.05 2.5� 0.1 � 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Allowing supply with the radial taping. 0.65 max. +0.1 0.45�0.05 Absolute Maximum Ratings (Ta=25?C) 2.5� 0.5 2.5� 0.5 Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO �60 V Collector to emitter voltage VCEO �50 V Emitter to base voltage VEBO �7 V Note: In addition to the 1:Emitter lead type shown in 2:Collector Peak collector current ICP �200 mA the upper figure, the 3:Base Collector current IC �100 mA type as shown in MT1 Type Package the lower figure is Collector power dissipation PC 400 mW also available. Junction temperature Tj 150 ?C Storage temperature Tstg �55 ~ +150 ?C 1.2� 0.1 0.65 max. 0.45+0.1 �0.05 (HW type) Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = �20V,

4.11. 2sb1322a.pdf Size:78K _secos

2SB1322A -1A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES G H ? Allow Supply with The Radial Taping ?Emitter ?Collector ?Base J A D CLASSIFICATION OF hFE (1) Millimeter REF. Min. Max. Product-Rank 2SB1322A-Q 2SB1322A-R 2SB1322A-S B A 4.40 4.70 B 4.30 4.70 Range 85~170 120~240 170~340 K C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. E C F H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector ?? ?? Base ?? Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -1 A Collector Power Dissipation PC 0.625 W Thermal Resistance From Junction to Ambient R?JA 200 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECT

See also transistors datasheet: 2SB132 , 2SB1320 , 2SB1321 , 2SB1322 , 2SB1323 , 2SB1324 , 2SB1325 , 2SB1326 , TIP41C , 2SB132A , 2SB133 , 2SB1334 , 2SB1335 , 2SB1337 , 2SB1338 , 2SB1339 , 2SB134 .

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