2SB1409SD Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB1409SD

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 18

Maximum collector-base voltage |Ucb|, V: 180

Maximum collector-emitter voltage |Uce|, V: 160

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 1.5

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 120

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2SB1409SD transistor: DPAK

2SB1409SD Equivalent Transistors - Cross-Reference Search

2SB1409SD PDF document for downloads:

3.1. 2sb1409.pdf Size:46K _hitachi

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

4.1. 2sb1405.pdf Size:73K _sanyo

Ordering number:EN3236 PNP Epitaxial Planar Silicon Transistor 2SB1405 General Driver Applications Features Package Dimensions · Darlington connection. unit:mm · High DC current gain. 2064 · Large current capacity, wide ASO. [2SB1405] E : Emitter C : Collector B : Base SANYO : NMP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –80 V Collector-to-Emitter Voltage VCEO –50 V Emitter-to-Base Voltage VEBO –10 V Collector Current IC –0.7 A Collector Current (Pulse) ICP –2 A Collector Dissipation PC 1 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=–40V, IE=0 –100 nA Emitter Cutoff Current IEBO VEB=–8V, IC=0 –100 nA hFE1 VCE=–2V, IC=–50mA 5000 DC Current Gain hFE2 VCE=–2V, IC=–500mA 3000 Gain-Bandwidth Product fT VCE=–5V, IC=–50m

4.2. 2sb1406.pdf Size:70K _sanyo

Ordering number:EN3470 PNP Epitaxial Planar Silicon Darlington Transistor 2SB1406 Driver Applications Applications Package Dimensions · Relay drivers, hammer drivers, lamp drivers, motor unit:mm drivers. 2064 [2SB1406] Features · Darlington connection. · High DC current gain. · Large current capacity. E : Emitter C : Collector B : Base SANYO : NMP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –80 V Collector-to-Emitter Voltage VCEO –50 V Emitter-to-Base Voltage VEBO –10 V Collector Current IC –1.5 A Collector Current (Pulse) ICP –3 A Collector Dissipation PC 1 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=–40V, IE=0 –100 nA Emitter Cutoff Current IEBO VEB=–6V, IC=0 –100 nA hFE1 VCE=–2V, IC=–500mA 4000 DC Current Gain

4.3. 2sb1400.pdf Size:35K _hitachi

2SB1400 Silicon PNP Epitaxial Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 1 2 1 k? 400 ? 3 (Typ) (Typ) 3 2SB1400 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage VCEO –120 V Emitter to base voltage VEBO –7 V Collector current IC –6 A Collector peak current IC(peak) –10 A Collector power dissipation PC 2W PC*1 25 Junction temperature Tj 150 ° C Storage temperature Tstg –55 to +150 ° C Note: 1. Value at TC = 25° C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO –120 — — V IC = –0.1 mA, IE = 0 voltage Collector to emitter breakdown V(BR)CEO –120 — — V IC = –25 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO –7 — — V IE = –50 mA, IC = 0 voltage Collector cutoff current ICBO — — –10 µ A VCB = –100 V, IE = 0 ICEO — — –10 VCE = –100 V, RBE = ? D

4.4. 2sb1401.pdf Size:29K _hitachi

2SB1401 Silicon PNP Triple Diffused ADE-208-875 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 1 2 55 k? 3 (Typ) 3 2SB1401 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –300 V Collector to emitter voltage VCEO –300 V Emitter to base voltage VEBO –7 V Collector current IC –0.3 A Collector peak current IC(peak) –0.6 A Collector power dissipation PC 2W PC*1 15 Junction temperature Tj 150 ° C Storage temperature Tstg –55 to +150 ° C Note: 1. Value at TC = 25° C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO –300 — — V IC = –1 mA, IE = 0 voltage Collector to emitter breakdown V(BR)CEO –300 — — V IC = –10 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO –7 — — V IE = –1 mA, IC = 0 voltage Collector cutoff current ICBO — — –10 µ A VCB = –300 V, IE = 0

4.5. 2sb1407.pdf Size:42K _hitachi

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

4.6. 2sb1400.pdf Size:92K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1400 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector -emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -6 A ICM Collector current-peak -10 A Ta=25? 2 PC Collector power dissipation W TC=25? 25 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1400 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO

4.7. 2sb1403.pdf Size:93K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1403 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector -emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -6 A ICM Collector current-peak -12 A Ta=25? 2 PC Collector power dissipation W TC=25? 25 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1403 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO

4.8. 2sb1402.pdf Size:229K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1402 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -6 A Collector Power Dissipation 2 @Ta=25? PC W Collector Power Dissipation 25 @TC=25? Junction Temperature 150 ? TJ Storage Temperature -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1402 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX

4.9. 2sb1404.pdf Size:228K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1404 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -6 A Collector Power Dissipation 2 @Ta=25? PC W Collector Power Dissipation 25 @TC=25? Junction Temperature 150 ? TJ Storage Temperature -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1404 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX

See also transistors datasheet: 2SB1407SC , 2SB1407SD , 2SB1409 , 2SB1409L , 2SB1409LB , 2SB1409LC , 2SB1409S , 2SB1409SC , BC547B , 2SB141 , 2SB1411 , 2SB1413 , 2SB1415 , 2SB1416 , 2SB1417 , 2SB1418 , 2SB1419 .

Keywords