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2SB1437 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB1437

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 8

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 165

Transition frequency (ft), MHz: 23

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 230

Noise Figure, dB: -

Package of 2SB1437 transistor: SOT33

2SB1437 Equivalent Transistors - Cross-Reference Search

2SB1437 PDF document for downloads:

4.1. 2sb1432.pdf Size:106K _nec

DATA SHEET SILICON POWER TRANSISTOR 2SB1432 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1432 is a Darlington power transistor that can be directly ORDERING INFORMATION driven from the output of an IC. This transistor is ideal for OA and FA Part No. Package equipment such as motor and solenoid drivers. 2SB1432 Isolated TO-220 In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. (Isolated TO-220) FEATURES • High hFE due to Darlington connection hFE ? 1,000 @VCE = -2.0 V, IC = -10 A) • Mold package that does not require an insulation board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25° °C) ° ° Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO -100 V Collector to emitter voltage VCEO -100 V Emitter to base voltage VEBO -8.0 V –10 A Collector current (DC) IC(DC) + –20 A Collector

4.2. 2sb1430.pdf Size:115K _nec

DATA SHEET SILICON POWER TRANSISTOR 2SB1430 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1430 is a Darlington power transistor that can directly PACKAGE DRAWING (UNIT: mm) drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, this transistor features a small resin-molded insulation type package, thus contributing to high-density mounting and mounting cost reduction. FEATURES • High hFE due to Darlington connection: hFE ? 2,000 (VCE = 2 V, IC = 2 A) • Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25° °C) ° ° Electrode Connection Parameter Symbol Ratings Unit 1. Base 2. Collector Collector to base voltage VCBO -100 V 3. Emitter Collector to emitter voltage VCEO -100 V EQUIVALENT CIRCUIT Emitter to base voltage VEBO -7.0 V Collector current (DC

4.3. 2sb1438.pdf Size:79K _panasonic

Transistors 2SB1438 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 6.9±0.1 2.5±0.1 0.7 4.0 (0.8) ¦ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector-emitter voltage (Base open) VCEO 0.65 max. • Allowing supply with the radial taping ¦ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -100 V Collector-emitter voltage (Base open) VCEO -100 V 0.45+0.10 0.45+0.10 –0.05 –0.05 1.05±0.05 Emitter-base voltage (Collector open) VEBO -5 V 2.5±0.5 2.5±0.5 Collector current IC -2 A 1: Emitter Peak collector current ICP -3 A 2: Collector 1 2 3 3: Base Collector power dissipation * PC 1 W MT-2-A1 Package Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C Note) Print circuit board: Copper foil area of 1 cm2 or more, and the board *: thickness of 1.7 mm for the collector portion ¦ Electrical Characteristics Ta = 25°C ± 3°C Parameter

4.4. 2sb1434_e.pdf Size:43K _panasonic

Transistor 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SD2177 2.5± 0.1 1.05 6.9± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25?C) 0.45–0.05 2.5± 0.5 2.5± 0.5 Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V Note: In addition to the 1:Emitter lead type shown in 2:Collector Peak collector current ICP –3 A the upper figure, the 3:Base Collector current IC –2 A type as shown in MT2 Type Package the lower figure is Collector power dissipation PC* 1 W also available. Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C * Printed circuit board: Copper foil area of 1cm2 or more, and the board 1.2± 0.1 thickness of 1.7mm for the collector portion 0.

4.5. 2sb1435.pdf Size:79K _panasonic

Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 7.5±0.2 4.5±0.2 ¦ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC 0.65±0.1 0.85±0.1 0.8 C 0.8 C • Allowing automatic insertion with radial taping 1.0±0.1 0.7±0.1 0.7±0.1 1.15±0.2 ¦ Absolute Maximum Ratings Ta = 25°C 1.15±0.2 Parameter Symbol Rating Unit 0.5±0.1 0.4±0.1 Collector-base voltage (Emitter open) VCBO -50 V Collector-emitter voltage (Base open) VCEO -50 V 0.8 C 1 2 3 Emitter-base voltage (Collector open) VEBO -5 V 1: Emitter Collector current IC -2 A 2: Collector 2.5±0.2 2.5±0.2 3: Base Peak collector current ICP -3 A MT-3-A1 Package Collector power dissipation PC 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C ¦ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emiter open) VCBO IC = -10 µA, IE = 0 -50 V

4.6. 2sb1434.pdf Size:78K _panasonic

Transistors 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 6.9±0.1 2.5±0.1 Complementary to 2SD2177 0.7 4.0 (0.8) ¦ Features • Low collector-emitter saturation voltage VCE(sat) 0.65 max. • Allowing supply with the radial taping ¦ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -50 V Collector-emitter voltage (Base open) VCEO -50 V 0.45+0.10 0.45+0.10 –0.05 –0.05 1.05±0.05 Emitter-base voltage (Collector open) VEBO -5 V 2.5±0.5 2.5±0.5 Collector current IC -2 A 1: Emitter 2: Collector Peak collector current ICP -3 A 1 2 3 3: Base Collector power dissipation * PC 1 W MT-2-A1 Package Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C Note) Print circuit board: Copper foil area of 1 cm2 or more, and the board *: thickness of 1.7 mm for the collector portion ¦ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Ty

4.7. 2sb1438_e.pdf Size:44K _panasonic

Transistor 2SB1438 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 2.5± 0.1 1.05 6.9± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 0.65 max. Allowing supply with the radial taping. +0.1 0.45–0.05 Absolute Maximum Ratings (Ta=25?C) 2.5± 0.5 2.5± 0.5 Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO –100 V Collector to emitter voltage VCEO –100 V Emitter to base voltage VEBO –5 V Note: In addition to the 1:Emitter lead type shown in 2:Collector Peak collector current ICP –3 A the upper figure, the 3:Base Collector current IC –2 A type as shown in MT2 Type Package the lower figure is Collector power dissipation PC* 1 W also available. Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C * Printed circuit board: Copper foil area of 1cm2 or more, and the board 1.2± 0.1 thickness of 1.7mm for the colle

4.8. 2sb1436.pdf Size:137K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1436 DESCRIPTION · ·With TO-126 package ·Complement to type 2SD2166 ·Low collector saturation voltage APPLICATIONS ·For audio power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -30 V VCEO Collector-emitter voltage Open base -20 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -5 A ICM Collector current-Peak -10 A Ta=25? 1.5 PD Total power dissipation W TC=25? 5 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1436 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-50?A ;I

4.9. 2sb1430.pdf Size:234K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1430 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2A, IBB= -2mA) APPLICATIONS ·Designed for low-frequency power amplifiers and low- speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A IB Base Current-Continuous -0.5 A Collector Power Dissipation 2 @Ta=25? PC W Collector Power Dissipation 20 @TC=25? Junction Temperature 150 ? TJ Storage Temperature -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon

See also transistors datasheet: 2SB1422 , 2SB1429 , 2SB143 , 2SB1430 , 2SB1431 , 2SB1432 , 2SB1434 , 2SB1435 , 2SA1015 , 2SB1438 , 2SB1439 , 2SB143P , 2SB144 , 2SB1447 , 2SB1449 , 2SB144P , 2SB145 .

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