All Transistors Datasheet

2SB1489 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB1489

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 1.5

Maximum collector-base voltage |Ucb|, V: 400

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 0.6

Maximum junction temperature (Tj), °C: 145

Transition frequency (ft), MHz: 10

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 160

Noise Figure, dB: -

Package of 2SB1489 transistor: TO126

2SB1489 Equivalent Transistors - Cross-Reference Search

2SB1489 PDF document for downloads:

4.1. 2sb1481.pdf Size:179K _toshiba

4.2. 2sb1488_e.pdf Size:46K _panasonic

Transistor 2SB1488 Silicon PNP triple diffusion planer type Unit: mm For power switching 2.5± 0.1 1.05 6.9± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features 0.65 max. High foward current transfer ratio hFE. High-speed switching. High collector to base voltage VCBO. Allowing supply with the radial taping. +0.1 0.45–0.05 2.5± 0.5 2.5± 0.5 Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO –400 V Note: In addition to the 1:Emitter Collector to emitter voltage VCEO –400 V lead type shown in 2:Collector the upper figure, the 3:Base Emitter to base voltage VEBO –7 V type as shown in MT2 Type Package Peak collector current ICP –1 A the lower figure is also available. Collector current IC – 0.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 ?C 1.2± 0.1 Storage temperature Tstg –55 ~ +150 ?C 0.65 max. * Printed circuit board: Copper foil area of 1cm2 or more, and the board 0.45+0.1 –0.05 thickne

4.3. 2sb1488.pdf Size:41K _panasonic

Transistor 2SB1488 Silicon PNP triple diffusion planer type Unit: mm For power switching 2.5± 0.1 1.05 6.9± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features 0.65 max. High foward current transfer ratio hFE. High-speed switching. High collector to base voltage VCBO. Allowing supply with the radial taping. +0.1 0.45–0.05 2.5± 0.5 2.5± 0.5 Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO –400 V Note: In addition to the 1:Emitter Collector to emitter voltage VCEO –400 V lead type shown in 2:Collector the upper figure, the 3:Base Emitter to base voltage VEBO –7 V type as shown in MT2 Type Package Peak collector current ICP –1 A the lower figure is also available. Collector current IC – 0.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 ?C 1.2± 0.1 Storage temperature Tstg –55 ~ +150 ?C 0.65 max. * Printed circuit board: Copper foil area of 1cm2 or more, and the board 0.45+0.1 –0.05 thickne

4.4. 2sb1481.pdf Size:226K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1481 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1.5A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -3A, IBB= -6mA) ·Complement to Type 2SD2241 APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Pulse -6 A IB Base Current-Continuous -0.3 A Collector Power Dissipation 2 @Ta=25? PC W Collector Power Dissipation 25 @TC=25? Junction Temperature 150 ? TJ Storage Temperature -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Pro

See also transistors datasheet: 2SB1463 , 2SB1464 , 2SB1466 , 2SB147 , 2SB1473 , 2SB148 , 2SB1481 , 2SB1488 , BC157 , 2SB149 , 2SB1490 , 2SB1494 , 2SB1495 , 2SB149N , 2SB15 , 2SB150 , 2SB151 .

Keywords