2SB153 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB153

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.15

Maximum collector-base voltage |Ucb|, V: 12

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 2

Maximum collector current |Ic max|, A: 0.07

Maximum junction temperature (Tj), °C: 85

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of 2SB153 transistor: TO1

2SB153 Equivalent Transistors - Cross-Reference Search

2SB153 PDF document for downloads:

1.1. 2sb1539.pdf Size:36K _panasonic

Transistor 2SB1539 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SD2359 1.5± 0.1 4.5± 0.1 Features 1.6± 0.2 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45° Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4± 0.08 0.4± 0.04 0.5± 0.08 1.5± 0.1 3.0± 0.15 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit marking Collector to base voltage VCBO –20 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5 V 1:Base 2:Collector EIAJ:SC–62 Peak collector current ICP –1.2 A 3:Emitter Mini Power Type Package Collector current IC –1 A Collector power dissipation PC* 1 W Marking symbol : 1N Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of

1.2. 2sb1537.pdf Size:35K _panasonic

Transistor 2SB1537 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SD2357 1.5± 0.1 4.5± 0.1 Features 1.6± 0.2 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45° Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4± 0.08 0.4± 0.04 0.5± 0.08 1.5± 0.1 3.0± 0.15 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit marking Collector to base voltage VCBO –10 V Collector to emitter voltage VCEO –10 V Emitter to base voltage VEBO –5 V 1:Base 2:Collector EIAJ:SC–62 Peak collector current ICP –1.2 A 3:Emitter Mini Power Type Package Collector current IC –1 A Collector power dissipation PC* 1 W Marking symbol : 1L Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of

1.3. 2sb1539_e.pdf Size:40K _panasonic

Transistor 2SB1539 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SD2359 1.5± 0.1 4.5± 0.1 Features 1.6± 0.2 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45° Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4± 0.08 0.4± 0.04 0.5± 0.08 1.5± 0.1 3.0± 0.15 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit marking Collector to base voltage VCBO –20 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5 V 1:Base 2:Collector EIAJ:SC–62 Peak collector current ICP –1.2 A 3:Emitter Mini Power Type Package Collector current IC –1 A Collector power dissipation PC* 1 W Marking symbol : 1N Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of

1.4. 2sb1537_e.pdf Size:39K _panasonic

Transistor 2SB1537 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SD2357 1.5± 0.1 4.5± 0.1 Features 1.6± 0.2 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45° Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4± 0.08 0.4± 0.04 0.5± 0.08 1.5± 0.1 3.0± 0.15 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit marking Collector to base voltage VCBO –10 V Collector to emitter voltage VCEO –10 V Emitter to base voltage VEBO –5 V 1:Base 2:Collector EIAJ:SC–62 Peak collector current ICP –1.2 A 3:Emitter Mini Power Type Package Collector current IC –1 A Collector power dissipation PC* 1 W Marking symbol : 1L Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of

1.5. 2sb1530.pdf Size:41K _hitachi

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

1.6. 2sb1530.pdf Size:232K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1530 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Complement to Type 2SD2337 APPLICATIONS ·Designed for low frequency power amplifier color TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -5 A Collector Power Dissipation 1.5 @ Ta=25? PC W Collector Power Dissipation 20 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -45~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1530 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(B

See also transistors datasheet: 2SB1494 , 2SB1495 , 2SB149N , 2SB15 , 2SB150 , 2SB151 , 2SB152 , 2SB152A , 2SC114 , 2SB1530 , 2SB154 , 2SB155 , 2SB1555 , 2SB1555A , 2SB1555B , 2SB1555C , 2SB1556 .

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