2SB1556C Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB1556C

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 120

Maximum collector-base voltage |Ucb|, V: 140

Maximum collector-emitter voltage |Uce|, V: 140

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 8

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 30

Collector capacitance (Cc), pF: 120

Forward current transfer ratio (hFE), min: 15

Noise Figure, dB: -

Package of 2SB1556C transistor: TO264

2SB1556C Equivalent Transistors - Cross-Reference Search

2SB1556C PDF document for downloads:

3.1. 2sb1556.pdf Size:177K _toshiba

3.2. 2sb1556.pdf Size:229K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1556 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= -7A ·Complement to Type 2SD2385 APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IBB Base Current-Continuous -0.1 A Collector Power Dissipation PC @ TC=25? 120 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1556 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Brea

4.1. 2sb1555.pdf Size:175K _toshiba

4.2. 2sb1557.pdf Size:183K _toshiba

4.3. 2sb1558.pdf Size:184K _toshiba

4.4. 2sb1554.pdf Size:54K _panasonic

Power Transistors 2SB1554 Silicon PNP epitaxial planar type For power amplification Unit: mm 5.0± 0.1 Features 10.0± 0.2 1.0 High forward current transfer ratio hFE which has satisfactory linearity 90° Allowing automatic insertion with radial taping 1.2± 0.1 C1.0 Absolute Maximum Ratings (TC=25?C) 2.25± 0.2 0.65± 0.1 Parameter Symbol Ratings Unit 0.35± 0.1 1.05± 0.1 Collector to base voltage VCBO –60 V 0.55± 0.1 0.55± 0.1 Collector to emitter voltage VCEO –60 V Emitter to base voltage VEBO –20 V C1.0 1 2 3 Peak collector current ICP –8 A Collector current IC –4 A 2.5± 0.2 2.5± 0.2 Base current IB –2 A 1:Base 2:Collector Collector power TC=25° C 15 3:Emitter PC W dissipation Ta=25° C 2 MT4 Type Package Junction temperature Tj 150 ?C Storage temperature Tstg –55 to +150 ?C Electrical Characteristics (TC=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = –60V, IE = 0 –10 µ A Collector cutoff current ICEO VCE = –50V, IB = 0 –50 µ A Emitt

4.5. 2sb1553.pdf Size:52K _panasonic

Power Transistors 2SB1553 Silicon PNP epitaxial planar type For power amplification Unit: mm 5.0± 0.1 Features 10.0± 0.2 1.0 High foward current transfer ratio hFE 90° Satisfactory linearity of foward current transfer ratio hFE Allowing automatic insertion with radial taping 1.2± 0.1 C1.0 2.25± 0.2 Absolute Maximum Ratings (TC=25?C) 0.65± 0.1 0.35± 0.1 1.05± 0.1 Parameter Symbol Ratings Unit 0.55± 0.1 0.55± 0.1 Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –60 V C1.0 Emitter to base voltage VEBO –6 V 1 2 3 Peak collector current ICP –6 A 2.5± 0.2 2.5± 0.2 Collector current IC –3 A 1:Base 2:Collector Base current IB –1 A 3:Emitter Collector power TC=25° C 15 MT4 Type Package PC W dissipation Ta=25° C 2 Junction temperature Tj 150 ?C Storage temperature Tstg –55 to +150 ?C Electrical Characteristics (TC=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = –60V, IE = 0 –100 µ A Collector cutoff current ICEO VCE =

4.6. 2sb1559.pdf Size:29K _sanken-ele

E (70?) B Darlington 2SB1559 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2389) Application : Audio, Series Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) Symbol Conditions Ratings Symbol Ratings Unit Unit ±0.2 4.8 ±0.4 15.6 ICBO µ A VCBO –160 V VCB=–160V –100max ±0.1 9.6 2.0 IEBO VEB=–5V –100max VCEO –150 V µ A V(BR)CEO IC=–30mA –150min VEBO –5 V V a ±0.1 o3.2 hFE VCE=–4V, IC=–6A 5000min? IC –8 A b VCE(sat) IC=–6A, IB=–6mA –2.5max IB –1 A V PC VBE(sat) IC=–6A, IB=–6mA –3.0max V 80(Tc=25°C) W 2 Tj fT VCE=–12V, IE=1A 65typ MHz 150 °C 3 COB VCB=–10V, f=1MHz 160typ Tstg –55 to +150 °C pF 1.05+0.2 0.65+0.2 -0.1 -0.1 to to to ? hFE Rank O(5000 12000), P(6500 20000), Y(15000 30000) ±0.1 ±0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 6.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton

4.7. 2sb1550.pdf Size:79K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1550 DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON APPLICATIONS ·For medium speed and power switching applications PINNING PIN DESCRIPTION 1 Base Collector; connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1550 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA, IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-0.1mA

4.8. 2sb1555.pdf Size:229K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1555 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= -6A ·Complement to Type 2SD2384 APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IBB Base Current-Continuous -0.1 A Collector Power Dissipation PC @ TC=25? 100 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1555 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Brea

4.9. 2sb1558.pdf Size:122K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1558 DESCRIPTION Ў¤ With TO-3PI package Ў¤ Complement to type 2SD2387 APPLICATIONS Ў¤ For power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PI) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER CONDITIONS Open emitter Open base Collector-emitter voltage INCH Base current Emitter-base voltage Collector current GE S AN Open collector EMIC OND TOR UC VALUE -140 -140 -5 -8 -0.1 UNIT V V V A A W Ўж Ўж Collector power dissipation Junction temperature Storage temperature TC=25Ўж 80 150 -55~150

4.10. 2sb1551.pdf Size:226K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1551 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V; IC= -5A) APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse -20 A Collector Power Dissipation 2 @Ta=25? PC W Collector Power Dissipation 30 @TC=25? Junction Temperature 150 ? TJ Storage Temperature -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1551 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO C

4.11. 2sb1559.pdf Size:149K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1559 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type 2SD2389 APPLICATIONS Ў¤ Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER CONDITIONS ANG INCH Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Collector-emitter voltage EMIC ES Open base Open collector TC=25Ўж Open emitter DUC ON VALUE -160 TOR UNIT V V V A A W Ўж Ўж -150 -5 -8 -1 80 150 -55~150

See also transistors datasheet: 2SB155 , 2SB1555 , 2SB1555A , 2SB1555B , 2SB1555C , 2SB1556 , 2SB1556A , 2SB1556B , 2N2222A , 2SB1557 , 2SB1557A , 2SB1557B , 2SB1557C , 2SB1558 , 2SB1558A , 2SB1558B , 2SB1558C .

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