2SB1648 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB1648

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 200

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 150

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 17

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 70

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 10000

Noise Figure, dB: -

Package of 2SB1648 transistor: XM20

2SB1648 Equivalent Transistors - Cross-Reference Search

2SB1648 PDF document for downloads:

1.1. 2sb1648.pdf Size:29K _sanken-ele

E (70?) B Darlington 2SB1648 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Application : Audio, Series Regulator and General Purpose (Ta=25°C) External Dimensions MT-200 Absolute maximum ratings (Ta=25°C) Electrical Characteristics Symbol Ratings Unit Symbol Conditions Ratings Unit ±0.2 6.0 ±0.3 36.4 VCBO –150 V ICBO VCB=–150V –100max µ A ±0.2 24.4 2.1 VCEO –150 V IEBO VEB=–5V –100max µ A ±0.1 2-o3.2 9 VEBO –5 V V(BR)CEO IC=–30mA –150min V IC –17 A hFE VCE=–4V, IC=–10A 5000min? a IB –1 A IC=–10A, IB=–10mA –2.5max V VCE(sat) b PC 200(Tc=25°C) W IC=–10A, IB=–10mA –3.0max V VBE(sat) 2 Tj fT VCE=–12V, IE=2A 45typ MHz 150 °C 3 Tstg –55 to +150 °C 0.65+0.2 COB VCB=–10V, f=1MHz 320typ pF -0.1 1.05+0.2 -0.1 to to to ? hFE Rank O(5000 12000), P(6500 20000), Y(15000 30000) +0.3 3.0 -0.1 ±0.1 ±0.1 5.45 5.45 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 18.4g VCC RL IC VBB1 VBB

4.1. 2sb1642.pdf Size:180K _toshiba

4.2. 2sb1641.pdf Size:182K _toshiba

4.3. 2sb1640.pdf Size:189K _toshiba

4.4. 2sb1644.pdf Size:48K _rohm

2SB1644 Transistors Power Transistor (-80V, -4A) 2SB1644 Features External dimensions (Units : mm) 1) Low saturation voltage. 13.1 3.2 (Typ. VCE(sat) = -0.5V at IC / IB = -3A / -0.3A) 2) Excellent DC current gain characteristics. 8.8 Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V 0.5Min. Emitter-base voltage VEBO -5 V -4 A (DC) Collector current IC (1) Base ROHM : PSD3 -6 A (Pulse) * (2) Collector Collector power dissipation EIAJ : SC-83A PC 30 W (Tc = 25°C) (3) Emitter Junction temperature Tj 150 °C Storage temperature Tstg -55~+150 °C Single pulse, Pw = 100ms * Packaging specifications and hFE Type 2SB1644 Package PSD3 hFE EF Code T100 Basic ordering unit (pieces) 1000 Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO -80 - - V IC = -50µA Collector-emitter breakdown volta

4.5. 2sb1643.pdf Size:56K _panasonic

Power Transistors 2SB1643 Silicon PNP epitaxial planar type Unit: mm 8.5± 0.2 3.4± 0.3 For power amplification 6.0± 0.5 1.0± 0.1 Features 1.5max. 1.1max. High collector to emitter VCEO High collector power dissipation PC 0.8± 0.1 0.5max. N type package enabling direct soldering of the radiating fin to 2.54± 0.3 the printed circuit board, etc. of small electronic equipment. 5.08± 0.5 1:Base 1 2 3 2:Collector Absolute Maximum Ratings (TC=25?C) 3:Emitter N Type Package Parameter Symbol Ratings Unit Unit: mm 8.5± 0.2 3.4± 0.3 Collector to base voltage VCBO –60 V 6.0± 0.3 1.0± 0.1 Collector to emitter voltage VCEO –60 V Emitter to base voltage VEBO –6 V Peak collector current ICP –6 A Collector current IC –3 A Base current IB –1 A R0.5 0.8± 0.1 R0.5 0 to 0.4 Collector power TC=25° C 40 2.54± 0.3 1.1 max. PC W 5.08± 0.5 dissipation Ta=25° C 1.3 Junction temperature Tj 150 ?C 1:Base 1 2 3 2:Collector Storage temperature Tstg –55 to +150 ?C 3:Emit

4.6. 2sb1645.pdf Size:54K _panasonic

Power Transistors 2SB1645 Silicon PNP triple diffusion planar type Darlington Unit: mm For power amplification 15.5±0.5 3.0±0.3 ? 3.2±0.1 5° 5° Features • Satisfactory forward current transfer ratio hFE characteristics • Wide area of safe operation (ASO) 5° 5° • Optimum for the output stage of a HiFi audio amplifier (4.0) 5° 2.0±0.2 1.1±0.1 Absolute Maximum Ratings TC = 25°C 0.7±0.1 Parameter Symbol Rating Unit 5.45±0.3 10.9±0.5 Collector to base voltage VCBO -160 V Collector to emitter voltage VCEO -160 V 5° 1 2 3 Emitter to base voltage VEBO -5V 1: Base Peak collector current ICP -15 A 2: Collector 3: Emitter Collector current IC -8A TOP-3E Package TC = 25°C PC 100 W Collector power Internal Connection dissipation Ta = 25°C3 C Junction temperature Tj 150 °C B Storage temperature Tstg -55 to +150 °C E Electrical Characteristics TC = 25°C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current ICBO VCB = -160 V, IE = 0 -10

4.7. 2sb1647.pdf Size:29K _sanken-ele

E (70?) B Darlington 2SB1647 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560) Application : Audio, Series Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) Symbol Ratings Unit Symbol Ratings Unit Conditions ±0.2 4.8 ±0.4 15.6 VCBO –150 V VCB=–150V –100max µ A ICBO ±0.1 9.6 2.0 VCEO –150 V VEB=–5V –100max µ A IEBO VEBO –5 V IC=–30mA –150min V V(BR)CEO a IC hFE 5000min? ±0.1 –15 A VCE=–4V, IC=–10A o3.2 b IB VCE(sat) –1 A IC=–10A, IB=–10mA –2.5max V PC VBE(sat) 130(Tc=25°C) W IC=–10A, IB=–10mA –3.0max V 2 Tj fT 45typ MHz VCE=–12V, IE=2A 150 °C 3 Tstg –55 to +150 °C COB 320typ pF VCB=–10V, f=1MHz 1.05+0.2 0.65+0.2 -0.1 -0.1 to to to ? hFE Rank O(5000 12000), P(6500 20000), Y(15000 30000) ±0.1 ±0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Ap

4.8. 2sb1649.pdf Size:30K _sanken-ele

E (70?) B Darlington 2SB1649 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Application : Audio, Series Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) Symbol Conditions Ratings Symbol Ratings Unit Unit ±0.2 ±0.2 5.5 15.6 ICBO VCBO –150 V VCB=–150V –100max µ A ±0.2 3.45 IEBO VEB=–5V –100max µ A VCEO –150 V V(BR)CEO IC=–30mA –150min V VEBO –5 V ±0.2 o3.3 hFE VCE=–4V, IC=–10A 5000min? IC –15 A a VCE(sat) IC=–10A, IB=–10mA –2.5max V IB –1 A b VBE(sat) IC=–10A, IB=–10mA –3.0max V PC 85(Tc=25°C) W Tj fT VCE=–12V, IE=2A 45typ MHz 150 °C 1.75 0.8 2.15 COB VCB=–10V, f=1MHz 320typ pF Tstg –55 to +150 °C 1.05+0.2 -0.1 to to to ? hFE Rank O(5000 12000), P(6500 20000), Y(15000 30000) ±0.1 ±0.1 0.65+0.2 3.35 5.45 5.45 -0.1 Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5 Weight : Approx 6.5g VCC RL IC VBB1 VBB2

4.9. 2sb1642.pdf Size:156K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1642 DESCRIPTION Ў¤ With TO-220F package Ў¤ Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2.5A,IB=-0.25A Ў¤ Collector power dissipation: PC=25W(TC=25Ўж ) APPLICATIONS Ў¤ Audio frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector Fig.1 simplified outline (TO-220F) and symbol Base DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE -60 -60 -7 -4 -1 UNIT V V V A A Open collector Ta=25Ўж PC Collector power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature 2.0 W 25 150 -55~150 Ўж Ўж

4.10. 2sb1647.pdf Size:126K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1647 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type 2SD2560 APPLICATIONS Ў¤ Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER CONDITIONS ANG INCH Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Collector-emitter voltage EMIC ES Open base Open collector TC=25Ўж Open emitter DUC ON VALUE -150 TOR UNIT V V V A A W Ўж Ўж -150 -5 -15 -1 130 150 -55~150

4.11. 2sb1640.pdf Size:115K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1640 DESCRIPTION Ў¤ With ITO-220 package Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SD2525 APPLICATIONS Ў¤ Audio frequency power amplifier PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER CONDITIONS Open emitter Collector-base voltage Collector-emitter voltage HAN INC Emitter-base voltage Collector current Base current Junction temperature Storage temperature SEM GE Open base TC=25Ўж OND IC TOR UC VALUE -60 -60 -7 -3 -0.5 1.8 150 -55~150 Ўж Ўж UNIT V V V A A W Open collector Collector power dissipation

See also transistors datasheet: 2SB161 , 2SB162 , 2SB1624 , 2SB1625 , 2SB1626 , 2SB163 , 2SB164 , 2SB1647 , P605 , 2SB1649 , 2SB165 , 2SB1659 , 2SB166 , 2SB167 , 2SB168 , 2SB169 , 2SB16A .

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