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2SB178
  2SB178
  2SB178
 
2SB178
  2SB178
  2SB178
 
2SB178
  2SB178
 
 
List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
2SB178 All Transistors Datasheet. BJT, Power MOSFET, IGBT, IC Catalog
 

2SB178 Transistor (IC) Datasheet. Cross Reference Search. 2SB178 Equivalent

Type Designator: 2SB178

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.225

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.3

Maksimalna temperatura (Tj), °C: 75

Transition frequency (ft), MHz: 0.3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 65

Noise Figure, dB: -

Package of 2SB178 transistor: TO5

2SB178 Equivalent Transistors - Cross-Reference Search

 

2SB178 PDF doc:

5.1. 2sb1708.pdf Size:66K _rohm

2SB178
2SB178
2SB1708 Transistors Low frequency amplifier 2SB1708 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) A collector current is large. (3A) (1) (2) 2) VCE(sat) ? -250mV 0.95 0.95 0.16 At IC = -1.5A / IB = -30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO -30 V Type Code TL VCEO -30 V Collector-emitter voltage Basic ordering unit (pieces) 3000 Emitter-base voltage VEBO -6 V 2SB1708 IC -3 A Collector current ? ICP -6 A PC 500 mW Power dissipation Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?Single pulse, PW=1ms Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO -30 - - V IC=-10A Collector-base breakdown voltage Collec

5.2. 2sb1705.pdf Size:66K _rohm

2SB178
2SB178
2SB1705 Transistors Low frequency amplifier 2SB1705 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 (3) Features 1) A collector current is large. ( ) ( ) 1 2 2) VCE(sat) ? -250mV 0.95 0.95 0.16 At IC=-1.5A / IB=-30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Equivalent circuit Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit (3) Collector-base voltage VCBO -15 V VCEO -12 V Collector-emitter voltage Emitter-base voltage VEBO -6 V IC -3 A Collector current ICP -6 A?1 PC 500 mW?2 Power dissipation (1) (2) Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?1Single pulse, PW=1ms ?2Each Termminal Mounted on a Recommended Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO -15 - - V IC= -10A Collector-base breakdown voltage Collector-emitter breakdown volt

5.3. 2sb1709.pdf Size:102K _rohm

2SB178
2SB178
2SB1709 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1709 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. 2) Collector saturation voltage is low. (1) (2) 0.95 0.95 VCE(sat) ? -200mV 0.16 1.9 (1) Base at IC = -500mA / IB = -25mA (2) Emitter Each lead has same dimensions (3) Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO -15 V Type Code TL VCEO -12 V Collector-emitter voltage Basic ordering unit (pieces) 3000 Emitter-base voltage VEBO -6 V 2SB1709 IC -1.5 A Collector current ICP -3 A?1 PC 500 mW?2 Power dissipation Junction temperature Tj 150 C Range of storage temperature Tstg -55~+150 C ?1 Single pulse, PW=1ms ?2 Each Terhinal Mounted on a Recommended Land Electrical characteristics (Ta=25C) Parameter Symbol

5.4. 2sb1707.pdf Size:66K _rohm

2SB178
2SB178
2SB1707 Transistors Low frequency amplifier 2SB1707 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 ( ) 3 Features 1) A collector current is large. (4A) ( ) ( ) 2) VCE(sat) ? -250mV 1 2 0.95 0.95 0.16 At IC = -2A / IB = -40mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO -15 V Type Code TL VCEO -12 V Collector-emitter voltage Basic ordering unit (pieces) 3000 Emitter-base voltage VEBO -6 V 2SB1707 IC -4 A Collector current ? ICP -8 A PC 500 mW Power dissipation Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?Single pulse, PW=1ms Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO -15 - - V IC= -10A Collector-base breakdown voltage

5.5. 2sb1731.pdf Size:105K _rohm

2SB178
2SB178
2SB1731 Transistors Low frequency amplifier 2SB1731 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) ?-370mV at IC =-1A / IB =-50mA ROHM : TUMT3 Abbreviated symbol : FL (1)Base (2)Emitter (3)Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO -30 V Type Code TL Collector-emitter voltage VCEO -30 V Basic ordering unit (pieces) 3000 Emitter-base voltage VEBO -6 V 2SB1731 IC -1.5 A Collector current ? ICP -3 A Power dissipation PC 400 mW Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?Single pulse, PW=1ms Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO -30 - - V IC=-10A Collector-base breakdown voltage Collector-emitter breakdown voltage BVCEO -30 - - V IC=-1mA Emitter-base breakdown voltage BVEBO

5.6. 2sb1713.pdf Size:98K _rohm

2SB178
2SB178
2SB1713 Transistors -3A / -12V Bipolar transistor 2SB1713 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (Typ. = -250mV, at IC = -1.5A, IB = -30mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol : XW PNP epitaxial planar silicon transistor Absolute maximum ratings (Ta=25C) Packaging specifications Parameter Symbol Limits Unit Package MPT3 Collector-base voltage VCBO -15 V Packaging type Taping Collector-emitter voltage VCEO -12 V Code T100 Emitter-base voltage VEBO -6 V Part No. Basic ordering unit (pieces) 1000 DC IC -3 2SB1713 A Collector current ?1 Pulse ICP -6 0.5 ?2 Power dissipation PC W ?3 2 Junction temperature tj 150 C Storage temperature tstg -55 to +150 C ?1 Pw=1ms, Pulsed. ?2 Each terminal mounted on a recommended land. ?3 Mounted on a 40?40?0.7mm ceramic board. Electrical characteristi

5.7. 2sb1732.pdf Size:105K _rohm

2SB178
2SB178
2SB1732 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1732 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ? -200mV ROHM : TUMT3 Abbreviated symbol : EV (1)Base at IC = -500mA / IB = -25mA (2)Emitter (3)Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO -15 V Type Code TL Collector-emitter voltage VCEO -12 V Basic ordering unit (pieces) 3000 Emitter-base voltage VEBO -6 V 2SB1732 IC -1.5 A Collector current ICP -3 A?1 Power dissipation PC 400 mW?2 Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?1 Single pulse, PW=1ms ?2 Each Terhinal Mounted on a Recommended Land Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO -15 - - V IC=-10A Collector-base

5.8. 2sb1706.pdf Size:60K _rohm

2SB178
2SB178
2SB1706 Transistors Low frequency amplifier 2SB1706 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. ( ) ( ) 1 2 2) VCE(sat) ? -370mV 0.95 0.95 0.16 At lc= -1.5A / lB= -75mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -6 V IC -2 A Collector current ICP -4 A?1 Power dissipation PC 500 mW?2 Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?1 Single pulse, Pw=1ms ?2 Each Terminal Mounted on a Recommended Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO -30 - - V IC= -10A Collector-emitter breakdown voltage BVCEO -30 - - V IC= -1mA Emitter

5.9. 2sb1714.pdf Size:118K _rohm

2SB178
2SB178
2SB1714 Transistors -2A / -30V Bipolar transistor 2SB1714 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE( sat) ? -370mV, at IC = -1.5A, IB = -75mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol : XY PNP epitaxial planar silicon transistor Absolute maximum ratings (Ta=25C) Packaging specifications Parameter Symbol Limits Unit Package MPT3 Collector-base voltage VCBO -30 V Packaging type Taping Collector-emitter voltage VCEO -30 V Code T100 Emitter-base voltage VEBO -6 V Part No. Basic ordering unit (pieces) 1000 DC IC -2 2SB1714 A Collector current ?1 Pulse ICP -4 0.5 ?2 Power dissipation PC W ?3 2 Junction temperature tj 150 C Storage temperature tstg -55 to +150 C ?1 Pw=1ms, Pulsed. ?2 Each terminal mounted on a recommended land. ?3 Mounted on a 40?40?0.7mm ceramic board. Electrical character

5.10. 2sb1710.pdf Size:104K _rohm

2SB178
2SB178
2SB1710 Transistors General purpose amplification (-30V, -1A) 2SB1710 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 ( ) 3 Features 1) A collector current is large. 2) Collector saturation voltage is low. ( ) ( ) 1 2 0.95 0.95 VCE(sat) ? -350mV 0.16 1.9 (1) Base at Ic = -500mA / IB = -25mA (2) Emitter Each lead has same dimensions (3) Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO -30 V Type Code TL VCEO -30 V Collector-emitter voltage Basic ordering unit (pieces) 3000 Emitter-base voltage VEBO -6 V IC -1 A 2SB1710 Collector current ICP -2 A?1 PC 500 mW?2 Power dissipation Junction temperature Tj 150 C Range of storage temperature Tstg -55~+150 C ?1Single pulse, PW=1ms ?2Each Terminal Mounted on a Recommended Electrical characteristics (Ta=25C) Parameter Symbol

5.11. 2sb1730.pdf Size:70K _rohm

2SB178
2SB178
2SB1730 Transistors General purpose amplification(-12V, -2A) 2SB1730 Applications Dimensions (Unit : mm) Low frequency amplifier Deiver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ? -180mV at IC= -1A / IB= -50mA ROHM : TUMT3 Abbreviated symbol : FV (1) Base Packaging specifications (2) Emitter (3) Collector Package Taping Type Code TL Basic ordering 3000 unit (pieces) 2SB1730 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -12 V Emitter-base voltage VEBO -6 V IC -2 A Collector current ICP -4 A? Collector power dissipation PC 400 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C ? Single pulse Pw=1ms Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO -15 - - V IC=-10A Collector-emitter breakdown viltage BV

5.12. 2sb1733.pdf Size:107K _rohm

2SB178
2SB178
2SB1733 Transistors General purpose amplification (-30V, -1A) 2SB1733 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. -350mV at Ic = -500mA / IB = -25mA ROHM :TUMT3 Abbreviated symbol : EW (1) Base (2) Emitter (3) Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO -30 V Type Code TL VCEO -30 V Collector-emitter voltage Basic ordering unit (pieces) 3000 Emitter-base voltage VEBO -6 V 2SB1733 IC -1 A Collector current ?1 ICP -2 A ?2 0.4 W PC Power dissipation ?3 0.8 W Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?1 Single pulse, PW=1ms ?2 Each Terminal Mounted on a Recommended land pattern ?3 Mounted on a 25mm?25mm? t 0.8mm ceramic substrate Electrical characteristics (Ta=25C) Para

5.13. 2sb1734.pdf Size:54K _panasonic

2SB178
2SB178
Transistors 2SB1734 Silicon PNP epitaxial planar type For general amplification Unit: mm Complementary to 2SD2706 0.40+0.10 0.05 0.16+0.10 0.06 3 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing. (0.95) (0.95) 1.90.1 Absolute Maximum Ratings Ta = 25C 2.90+0.20 0.05 Parameter Symbol Rating Unit 10? Collector-base voltage (Emitter open) VCBO -50 V Collector-emitter voltage (Base open) VCEO -50 V 1: Base Emitter-base voltage (Collector open) VEBO -5 V 2: Emitter 3: Collector Collector current IC -200 mA EIAJ: SC-59 Peak collector current ICP -400 mA Mini3-G1 Package Collector power dissipation PC 200 mW Marking Symbol: AF Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = -10

5.14. 2sb1722.pdf Size:81K _panasonic

2SB178
2SB178
Transistors 2SB1722J Silicon PNP epitaxial planar type Unit: mm 1.60+0.05 0.03 0.12+0.03 0.01 For high breakdown voltage low-frequency amplification 1.000.05 3 1 2 Features 0.270.02 High collector-emitter voltage (Base open) VCEO (0.50)(0.50) SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 5? Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -100 V 1: Base Collector-emitter voltage (Base open) VCEO -100 V 2: Emitter 3: Collector Emitter-base voltage (Collector open) VEBO -5 V EIAJ: SC-89 Collector current IC -20 mA SSMini3-F1 Package Peak collector current ICP -50 mA Marking Symbol: 4R Collector power dissipation PC 125 mW Junction temperature Tj 125 C Storage temperature Tstg -55 to +125 C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO

See also transistors datasheet: 2SB172 , 2SB172A , 2SB173 , 2SB173B , 2SB174 , 2SB175 , 2SB176 , 2SB177 , BC639 , 2SB178A , 2SB178B , 2SB178Q , 2SB179 , 2SB17A , 2SB18 , 2SB180 , 2SB180A .

Keywords

 2SB178 Datasheet  2SB178 Design 2SB178 MOSFET 2SB178 Power
 2SB178 RoHS Compliant 2SB178 Service 2SB178 Triacs 2SB178 Semiconductor
 2SB178 Database 2SB178 Innovation 2SB178 IC 2SB178 Electricity

 

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