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2SB178 Transistor (IC) Datasheet. Cross Reference Search. 2SB178 Equivalent

Type Designator: 2SB178

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.225

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.3

Maksimalna temperatura (Tj), °C: 75

Transition frequency (ft), MHz: 0.3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 65

Noise Figure, dB: -

Package of 2SB178 transistor: TO5

2SB178 Transistor Equivalent Substitute - Cross-Reference Search

2SB178 PDF:

5.1. 2sb1708.pdf Size:66K _rohm

2SB178
2SB178

2SB1708 Transistors Low frequency amplifier 2SB1708 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) A collector current is large. (3A) (1) (2) 2) VCE(sat) ? -250mV 0.95 0.95 0.16 At IC = -1.5A / IB = -30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Packag

5.2. 2sb1705.pdf Size:66K _rohm

2SB178
2SB178

2SB1705 Transistors Low frequency amplifier 2SB1705 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 (3) Features 1) A collector current is large. ( ) ( ) 1 2 2) VCE(sat) ? -250mV 0.95 0.95 0.16 At IC=-1.5A / IB=-30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Equivalent c

5.3. 2sb1709.pdf Size:102K _rohm

2SB178
2SB178

2SB1709 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1709 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. 2) Collector saturation voltage is low. (1) (2) 0.95 0.95 VCE(sat) ? -200mV 0.16 1.9 (1) Base at IC = -500mA / IB = -25mA (2) Emitter Each le

5.4. 2sb1707.pdf Size:66K _rohm

2SB178
2SB178

2SB1707 Transistors Low frequency amplifier 2SB1707 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 ( ) 3 Features 1) A collector current is large. (4A) ( ) ( ) 2) VCE(sat) ? -250mV 1 2 0.95 0.95 0.16 At IC = -2A / IB = -40mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Pack

5.5. 2sb1731.pdf Size:105K _rohm

2SB178
2SB178

2SB1731 Transistors Low frequency amplifier 2SB1731 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) ?-370mV at IC =-1A / IB =-50mA ROHM : TUMT3 Abbreviated symbol : FL (1)Base (2)Emitter (3)Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Pac

5.6. 2sb1713.pdf Size:98K _rohm

2SB178
2SB178

2SB1713 Transistors -3A / -12V Bipolar transistor 2SB1713 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (Typ. = -250mV, at IC = -1.5A, IB = -30mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol : XW PNP epitaxial planar silicon transistor

5.7. 2sb1732.pdf Size:105K _rohm

2SB178
2SB178

2SB1732 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1732 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ? -200mV ROHM : TUMT3 Abbreviated symbol : EV (1)Base at IC = -500mA / IB = -25mA (2)Emitter (3)Collector Packaging specifications Absol

5.8. 2sb1706.pdf Size:60K _rohm

2SB178
2SB178

2SB1706 Transistors Low frequency amplifier 2SB1706 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. ( ) ( ) 1 2 2) VCE(sat) ? -370mV 0.95 0.95 0.16 At lc= -1.5A / lB= -75mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Absolute ma

5.9. 2sb1714.pdf Size:118K _rohm

2SB178
2SB178

2SB1714 Transistors -2A / -30V Bipolar transistor 2SB1714 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE( sat) ? -370mV, at IC = -1.5A, IB = -75mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol : XY PNP epitaxial planar silicon transist

5.10. 2sb1710.pdf Size:104K _rohm

2SB178
2SB178

2SB1710 Transistors General purpose amplification (-30V, -1A) 2SB1710 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 ( ) 3 Features 1) A collector current is large. 2) Collector saturation voltage is low. ( ) ( ) 1 2 0.95 0.95 VCE(sat) ? -350mV 0.16 1.9 (1) Base at Ic = -500mA / IB = -25mA (2) Emitte

5.11. 2sb1730.pdf Size:70K _rohm

2SB178
2SB178

2SB1730 Transistors General purpose amplification(-12V, -2A) 2SB1730 Applications Dimensions (Unit : mm) Low frequency amplifier Deiver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ? -180mV at IC= -1A / IB= -50mA ROHM : TUMT3 Abbreviated symbol : FV (1) Base Packaging specifications (2) Emitter (3) Collector Package Tap

5.12. 2sb1733.pdf Size:107K _rohm

2SB178
2SB178

2SB1733 Transistors General purpose amplification (-30V, -1A) 2SB1733 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. -350mV at Ic = -500mA / IB = -25mA ROHM :TUMT3 Abbreviated symbol : EW (1) Base (2) Emitter (3) Collector Packaging specifications

5.13. 2sb1734.pdf Size:54K _panasonic

2SB178
2SB178

Transistors 2SB1734 Silicon PNP epitaxial planar type For general amplification Unit: mm Complementary to 2SD2706 0.40+0.10 0.05 0.16+0.10 0.06 3 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing. (0.95) (0.95) 1.90.1 Absolute Maximum Ratings Ta = 25C 2.90+0.20

5.14. 2sb1722.pdf Size:81K _panasonic

2SB178
2SB178

Transistors 2SB1722J Silicon PNP epitaxial planar type Unit: mm 1.60+0.05 0.03 0.12+0.03 0.01 For high breakdown voltage low-frequency amplification 1.000.05 3 1 2 Features 0.270.02 High collector-emitter voltage (Base open) VCEO (0.50)(0.50) SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 5? Absolute Maximu

See also transistors datasheet: 2SB172 , 2SB172A , 2SB173 , 2SB173B , 2SB174 , 2SB175 , 2SB176 , 2SB177 , BC639 , 2SB178A , 2SB178B , 2SB178Q , 2SB179 , 2SB17A , 2SB18 , 2SB180 , 2SB180A .

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