All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2SB178
  2SB178
  2SB178
 
2SB178
  2SB178
  2SB178
 
2SB178
  2SB178
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU912
BU920 .. BUP39
BUP40 .. BUV98V
BUW11 .. BUY21A
BUY22 .. CCN83
CCS2001 .. CFD2374Q
CFD2375 .. CK28A
CK398 .. CP404
CP405 .. CSA1267Y
CSA1293 .. CSC1684R
CSC1684S .. CSD669A
CSD669AB .. D24A3900A
D26B1 .. D40E4
D40E5 .. D56W2
D6 .. DPLS350E
DPLS350Y .. DTA143XE
DTA143XEA .. DTD113ES
DTD113Z .. ECG13
ECG130 .. ECG482
ECG483 .. ESM3030DV
ESM3045AV .. FCS9018E
FCS9018F .. FJY3009R
FJY3010R .. FMMT6517
FMMT6520 .. FX2369
FX2369A .. GC522
GC522K .. GES5551
GES5551R .. GS-H9033
GS-H9033D .. GT338B
GT338V .. HDA412
HDA420 .. HS5308
HS5810 .. IDD525
IDD526 .. JE9100C
JE9100D .. KRA102
KRA102M .. KRA763U
KRA764E .. KRC836E
KRC836U .. KSB1098-O
KSB1098-R .. KSC2787-R
KSC2787-Y .. KSD5064
KSD5065 .. KST92
KST93 .. KT3198V
KT321A .. KT6134B
KT6134V .. KT814A9
KT814B .. KT897A
KT897B .. KTB1424
KTB1772 .. KTD3055
KTD525 .. MC142
MC150 .. MJ10042
MJ10044 .. MJD350T4
MJD41C .. MJE5851
MJE5852 .. MM869B
MMBA811C5 .. MMBT589
MMBT589L .. MP110B-B
MP110B-G .. MP504A
MP505 .. MPS2925
MPS2926 .. MPSH02
MPSH04 .. MRF905
MRF912 .. NA11HX
NA11HY .. NB013FU
NB013FV .. NB212FY
NB212H .. NKT124
NKT12429 .. NPS5141
NPS5142 .. NTE172A
NTE176 .. OC815
OC816 .. PBSS5160V
PBSS5220T .. PIMD3
PIMH9 .. PN918
PN918R .. RCA1A05
RCA1A06 .. RN1605
RN1606 .. RN2710
RN2710JE .. S15649
S1619 .. SDT9204
SDT9205 .. SGSIF444
SGSIF445 .. SRA2212EF
SRA2212M .. STC5084
STC5085 .. SZD1060
SZD1181 .. TA2470
TA2492 .. TIP140T
TIP141 .. TIS37
TIS38 .. TN4036
TN4037 .. TP929
TP929A .. UN1066
UN1110Q .. UN9218
UN9219 .. ZT403
ZT403P .. ZTX4402L
ZTX4402M .. ZXTP5401FL
ZXTP5401G .. ZXTPS720MC
 
2SB178 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SB178 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB178

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.225

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.3

Maksimalna temperatura (Tj), °C: 75

Transition frequency (ft), MHz: 0.3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 65

Noise Figure, dB: -

Package of 2SB178 transistor: TO5

2SB178 Equivalent Transistors - Cross-Reference Search

2SB178 PDF doc:

5.1. 2sb1709.pdf Size:102K _rohm

2SB178
2SB178
2SB1709 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1709 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. 2) Collector saturation voltage is low. (1) (2) 0.95 0.95 VCE(sat) ? -200mV 0.16 1.9 (1) Base at IC = -500mA / IB = -25mA (2) Emitter Each lead has same dimensions (3) Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO -15 V Type Code TL VCEO -12 V Collector-emitter voltage Basic ordering unit (pieces) 3000 Emitter-base voltage VEBO -6 V 2SB1709 IC -1.5 A Collector current ICP -3 A?1 PC 500 mW?2 Power dissipation Junction temperature Tj 150 C Range of storage temperature Tstg -55~+150 C ?1 Single pulse, PW=1ms ?2 Each Terhinal Mounted on a Recommended Land Electrical characteristics (Ta=25C) Parameter Symbol

5.2. 2sb1713.pdf Size:98K _rohm

2SB178
2SB178
2SB1713 Transistors -3A / -12V Bipolar transistor 2SB1713 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (Typ. = -250mV, at IC = -1.5A, IB = -30mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol : XW PNP epitaxial planar silicon transistor Absolute maximum ratings (Ta=25C) Packaging specifications Parameter Symbol Limits Unit Package MPT3 Collector-base voltage VCBO -15 V Packaging type Taping Collector-emitter voltage VCEO -12 V Code T100 Emitter-base voltage VEBO -6 V Part No. Basic ordering unit (pieces) 1000 DC IC -3 2SB1713 A Collector current ?1 Pulse ICP -6 0.5 ?2 Power dissipation PC W ?3 2 Junction temperature tj 150 C Storage temperature tstg -55 to +150 C ?1 Pw=1ms, Pulsed. ?2 Each terminal mounted on a recommended land. ?3 Mounted on a 40?40?0.7mm ceramic board. Electrical characteristi

5.3. 2sb1705.pdf Size:66K _rohm

2SB178
2SB178
2SB1705 Transistors Low frequency amplifier 2SB1705 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 (3) Features 1) A collector current is large. ( ) ( ) 1 2 2) VCE(sat) ? -250mV 0.95 0.95 0.16 At IC=-1.5A / IB=-30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Equivalent circuit Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit (3) Collector-base voltage VCBO -15 V VCEO -12 V Collector-emitter voltage Emitter-base voltage VEBO -6 V IC -3 A Collector current ICP -6 A?1 PC 500 mW?2 Power dissipation (1) (2) Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?1Single pulse, PW=1ms ?2Each Termminal Mounted on a Recommended Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO -15 - - V IC= -10A Collector-base breakdown voltage Collector-emitter breakdown volt

5.4. 2sb1732.pdf Size:105K _rohm

2SB178
2SB178
2SB1732 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1732 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ? -200mV ROHM : TUMT3 Abbreviated symbol : EV (1)Base at IC = -500mA / IB = -25mA (2)Emitter (3)Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO -15 V Type Code TL Collector-emitter voltage VCEO -12 V Basic ordering unit (pieces) 3000 Emitter-base voltage VEBO -6 V 2SB1732 IC -1.5 A Collector current ICP -3 A?1 Power dissipation PC 400 mW?2 Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?1 Single pulse, PW=1ms ?2 Each Terhinal Mounted on a Recommended Land Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO -15 - - V IC=-10A Collector-base

5.5. 2sb1731.pdf Size:105K _rohm

2SB178
2SB178
2SB1731 Transistors Low frequency amplifier 2SB1731 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) ?-370mV at IC =-1A / IB =-50mA ROHM : TUMT3 Abbreviated symbol : FL (1)Base (2)Emitter (3)Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO -30 V Type Code TL Collector-emitter voltage VCEO -30 V Basic ordering unit (pieces) 3000 Emitter-base voltage VEBO -6 V 2SB1731 IC -1.5 A Collector current ? ICP -3 A Power dissipation PC 400 mW Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?Single pulse, PW=1ms Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO -30 - - V IC=-10A Collector-base breakdown voltage Collector-emitter breakdown voltage BVCEO -30 - - V IC=-1mA Emitter-base breakdown voltage BVEBO

5.6. 2sb1706.pdf Size:60K _rohm

2SB178
2SB178
2SB1706 Transistors Low frequency amplifier 2SB1706 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. ( ) ( ) 1 2 2) VCE(sat) ? -370mV 0.95 0.95 0.16 At lc= -1.5A / lB= -75mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -6 V IC -2 A Collector current ICP -4 A?1 Power dissipation PC 500 mW?2 Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?1 Single pulse, Pw=1ms ?2 Each Terminal Mounted on a Recommended Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO -30 - - V IC= -10A Collector-emitter breakdown voltage BVCEO -30 - - V IC= -1mA Emitter

5.7. 2sb1730.pdf Size:70K _rohm

2SB178
2SB178
2SB1730 Transistors General purpose amplification(-12V, -2A) 2SB1730 Applications Dimensions (Unit : mm) Low frequency amplifier Deiver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ? -180mV at IC= -1A / IB= -50mA ROHM : TUMT3 Abbreviated symbol : FV (1) Base Packaging specifications (2) Emitter (3) Collector Package Taping Type Code TL Basic ordering 3000 unit (pieces) 2SB1730 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -12 V Emitter-base voltage VEBO -6 V IC -2 A Collector current ICP -4 A? Collector power dissipation PC 400 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C ? Single pulse Pw=1ms Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO -15 - - V IC=-10A Collector-emitter breakdown viltage BV

5.8. 2sb1714.pdf Size:118K _rohm

2SB178
2SB178
2SB1714 Transistors -2A / -30V Bipolar transistor 2SB1714 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE( sat) ? -370mV, at IC = -1.5A, IB = -75mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol : XY PNP epitaxial planar silicon transistor Absolute maximum ratings (Ta=25C) Packaging specifications Parameter Symbol Limits Unit Package MPT3 Collector-base voltage VCBO -30 V Packaging type Taping Collector-emitter voltage VCEO -30 V Code T100 Emitter-base voltage VEBO -6 V Part No. Basic ordering unit (pieces) 1000 DC IC -2 2SB1714 A Collector current ?1 Pulse ICP -4 0.5 ?2 Power dissipation PC W ?3 2 Junction temperature tj 150 C Storage temperature tstg -55 to +150 C ?1 Pw=1ms, Pulsed. ?2 Each terminal mounted on a recommended land. ?3 Mounted on a 40?40?0.7mm ceramic board. Electrical character

5.9. 2sb1710.pdf Size:104K _rohm

2SB178
2SB178
2SB1710 Transistors General purpose amplification (-30V, -1A) 2SB1710 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 ( ) 3 Features 1) A collector current is large. 2) Collector saturation voltage is low. ( ) ( ) 1 2 0.95 0.95 VCE(sat) ? -350mV 0.16 1.9 (1) Base at Ic = -500mA / IB = -25mA (2) Emitter Each lead has same dimensions (3) Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO -30 V Type Code TL VCEO -30 V Collector-emitter voltage Basic ordering unit (pieces) 3000 Emitter-base voltage VEBO -6 V IC -1 A 2SB1710 Collector current ICP -2 A?1 PC 500 mW?2 Power dissipation Junction temperature Tj 150 C Range of storage temperature Tstg -55~+150 C ?1Single pulse, PW=1ms ?2Each Terminal Mounted on a Recommended Electrical characteristics (Ta=25C) Parameter Symbol

5.10. 2sb1708.pdf Size:66K _rohm

2SB178
2SB178
2SB1708 Transistors Low frequency amplifier 2SB1708 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) A collector current is large. (3A) (1) (2) 2) VCE(sat) ? -250mV 0.95 0.95 0.16 At IC = -1.5A / IB = -30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO -30 V Type Code TL VCEO -30 V Collector-emitter voltage Basic ordering unit (pieces) 3000 Emitter-base voltage VEBO -6 V 2SB1708 IC -3 A Collector current ? ICP -6 A PC 500 mW Power dissipation Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?Single pulse, PW=1ms Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO -30 - - V IC=-10A Collector-base breakdown voltage Collec

5.11. 2sb1733.pdf Size:107K _rohm

2SB178
2SB178
2SB1733 Transistors General purpose amplification (-30V, -1A) 2SB1733 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. -350mV at Ic = -500mA / IB = -25mA ROHM :TUMT3 Abbreviated symbol : EW (1) Base (2) Emitter (3) Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO -30 V Type Code TL VCEO -30 V Collector-emitter voltage Basic ordering unit (pieces) 3000 Emitter-base voltage VEBO -6 V 2SB1733 IC -1 A Collector current ?1 ICP -2 A ?2 0.4 W PC Power dissipation ?3 0.8 W Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?1 Single pulse, PW=1ms ?2 Each Terminal Mounted on a Recommended land pattern ?3 Mounted on a 25mm?25mm? t 0.8mm ceramic substrate Electrical characteristics (Ta=25C) Para

5.12. 2sb1707.pdf Size:66K _rohm

2SB178
2SB178
2SB1707 Transistors Low frequency amplifier 2SB1707 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 ( ) 3 Features 1) A collector current is large. (4A) ( ) ( ) 2) VCE(sat) ? -250mV 1 2 0.95 0.95 0.16 At IC = -2A / IB = -40mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO -15 V Type Code TL VCEO -12 V Collector-emitter voltage Basic ordering unit (pieces) 3000 Emitter-base voltage VEBO -6 V 2SB1707 IC -4 A Collector current ? ICP -8 A PC 500 mW Power dissipation Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?Single pulse, PW=1ms Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO -15 - - V IC= -10A Collector-base breakdown voltage

5.13. 2sb1734.pdf Size:54K _panasonic

2SB178
2SB178
Transistors 2SB1734 Silicon PNP epitaxial planar type For general amplification Unit: mm Complementary to 2SD2706 0.40+0.10 0.05 0.16+0.10 0.06 3 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing. (0.95) (0.95) 1.90.1 Absolute Maximum Ratings Ta = 25C 2.90+0.20 0.05 Parameter Symbol Rating Unit 10? Collector-base voltage (Emitter open) VCBO -50 V Collector-emitter voltage (Base open) VCEO -50 V 1: Base Emitter-base voltage (Collector open) VEBO -5 V 2: Emitter 3: Collector Collector current IC -200 mA EIAJ: SC-59 Peak collector current ICP -400 mA Mini3-G1 Package Collector power dissipation PC 200 mW Marking Symbol: AF Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = -10

5.14. 2sb1722.pdf Size:81K _panasonic

2SB178
2SB178
Transistors 2SB1722J Silicon PNP epitaxial planar type Unit: mm 1.60+0.05 0.03 0.12+0.03 0.01 For high breakdown voltage low-frequency amplification 1.000.05 3 1 2 Features 0.270.02 High collector-emitter voltage (Base open) VCEO (0.50)(0.50) SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 5? Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -100 V 1: Base Collector-emitter voltage (Base open) VCEO -100 V 2: Emitter 3: Collector Emitter-base voltage (Collector open) VEBO -5 V EIAJ: SC-89 Collector current IC -20 mA SSMini3-F1 Package Peak collector current ICP -50 mA Marking Symbol: 4R Collector power dissipation PC 125 mW Junction temperature Tj 125 C Storage temperature Tstg -55 to +125 C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO

See also transistors datasheet: 2SB172 , 2SB172A , 2SB173 , 2SB173B , 2SB174 , 2SB175 , 2SB176 , 2SB177 , BC639 , 2SB178A , 2SB178B , 2SB178Q , 2SB179 , 2SB17A , 2SB18 , 2SB180 , 2SB180A .

Keywords

 2SB178 Datasheet  2SB178 Datenblatt  2SB178 RoHS  2SB178 Distributor
 2SB178 Application Notes  2SB178 Component  2SB178 Circuit  2SB178 Schematic
 2SB178 Equivalent  2SB178 Cross Reference  2SB178 Data Sheet  2SB178 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com