All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2SB178
  2SB178
  2SB178
 
2SB178
  2SB178
  2SB178
 
2SB178
  2SB178
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2SB178 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SB178 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB178

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.225

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.3

Maksimalna temperatura (Tj), °C: 75

Transition frequency (ft), MHz: 0.3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 65

Noise Figure, dB: -

Package of 2SB178 transistor: TO5

2SB178 Equivalent Transistors - Cross-Reference Search

2SB178 PDF doc:

5.1. 2sb1709.pdf Size:102K _rohm

2SB178
2SB178
2SB1709 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1709 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. 2) Collector saturation voltage is low. (1) (2) 0.95 0.95 VCE(sat) ? -200mV 0.16 1.9 (1) Base at IC = -500mA / IB = -25mA (2) Emitter Each lead has same dimensions (3) Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO -15 V Type Code TL VCEO -12 V Collector-emitter voltage Basic ordering unit (pieces) 3000 Emitter-base voltage VEBO -6 V 2SB1709 IC -1.5 A Collector current ICP -3 A?1 PC 500 mW?2 Power dissipation Junction temperature Tj 150 C Range of storage temperature Tstg -55~+150 C ?1 Single pulse, PW=1ms ?2 Each Terhinal Mounted on a Recommended Land Electrical characteristics (Ta=25C) Parameter Symbol

5.2. 2sb1713.pdf Size:98K _rohm

2SB178
2SB178
2SB1713 Transistors -3A / -12V Bipolar transistor 2SB1713 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (Typ. = -250mV, at IC = -1.5A, IB = -30mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol : XW PNP epitaxial planar silicon transistor Absolute maximum ratings (Ta=25C) Packaging specifications Parameter Symbol Limits Unit Package MPT3 Collector-base voltage VCBO -15 V Packaging type Taping Collector-emitter voltage VCEO -12 V Code T100 Emitter-base voltage VEBO -6 V Part No. Basic ordering unit (pieces) 1000 DC IC -3 2SB1713 A Collector current ?1 Pulse ICP -6 0.5 ?2 Power dissipation PC W ?3 2 Junction temperature tj 150 C Storage temperature tstg -55 to +150 C ?1 Pw=1ms, Pulsed. ?2 Each terminal mounted on a recommended land. ?3 Mounted on a 40?40?0.7mm ceramic board. Electrical characteristi

5.3. 2sb1705.pdf Size:66K _rohm

2SB178
2SB178
2SB1705 Transistors Low frequency amplifier 2SB1705 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 (3) Features 1) A collector current is large. ( ) ( ) 1 2 2) VCE(sat) ? -250mV 0.95 0.95 0.16 At IC=-1.5A / IB=-30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Equivalent circuit Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit (3) Collector-base voltage VCBO -15 V VCEO -12 V Collector-emitter voltage Emitter-base voltage VEBO -6 V IC -3 A Collector current ICP -6 A?1 PC 500 mW?2 Power dissipation (1) (2) Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?1Single pulse, PW=1ms ?2Each Termminal Mounted on a Recommended Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO -15 - - V IC= -10A Collector-base breakdown voltage Collector-emitter breakdown volt

5.4. 2sb1732.pdf Size:105K _rohm

2SB178
2SB178
2SB1732 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1732 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ? -200mV ROHM : TUMT3 Abbreviated symbol : EV (1)Base at IC = -500mA / IB = -25mA (2)Emitter (3)Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO -15 V Type Code TL Collector-emitter voltage VCEO -12 V Basic ordering unit (pieces) 3000 Emitter-base voltage VEBO -6 V 2SB1732 IC -1.5 A Collector current ICP -3 A?1 Power dissipation PC 400 mW?2 Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?1 Single pulse, PW=1ms ?2 Each Terhinal Mounted on a Recommended Land Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO -15 - - V IC=-10A Collector-base

5.5. 2sb1731.pdf Size:105K _rohm

2SB178
2SB178
2SB1731 Transistors Low frequency amplifier 2SB1731 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) ?-370mV at IC =-1A / IB =-50mA ROHM : TUMT3 Abbreviated symbol : FL (1)Base (2)Emitter (3)Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO -30 V Type Code TL Collector-emitter voltage VCEO -30 V Basic ordering unit (pieces) 3000 Emitter-base voltage VEBO -6 V 2SB1731 IC -1.5 A Collector current ? ICP -3 A Power dissipation PC 400 mW Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?Single pulse, PW=1ms Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO -30 - - V IC=-10A Collector-base breakdown voltage Collector-emitter breakdown voltage BVCEO -30 - - V IC=-1mA Emitter-base breakdown voltage BVEBO

5.6. 2sb1706.pdf Size:60K _rohm

2SB178
2SB178
2SB1706 Transistors Low frequency amplifier 2SB1706 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. ( ) ( ) 1 2 2) VCE(sat) ? -370mV 0.95 0.95 0.16 At lc= -1.5A / lB= -75mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -6 V IC -2 A Collector current ICP -4 A?1 Power dissipation PC 500 mW?2 Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?1 Single pulse, Pw=1ms ?2 Each Terminal Mounted on a Recommended Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO -30 - - V IC= -10A Collector-emitter breakdown voltage BVCEO -30 - - V IC= -1mA Emitter

5.7. 2sb1730.pdf Size:70K _rohm

2SB178
2SB178
2SB1730 Transistors General purpose amplification(-12V, -2A) 2SB1730 Applications Dimensions (Unit : mm) Low frequency amplifier Deiver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ? -180mV at IC= -1A / IB= -50mA ROHM : TUMT3 Abbreviated symbol : FV (1) Base Packaging specifications (2) Emitter (3) Collector Package Taping Type Code TL Basic ordering 3000 unit (pieces) 2SB1730 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -12 V Emitter-base voltage VEBO -6 V IC -2 A Collector current ICP -4 A? Collector power dissipation PC 400 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C ? Single pulse Pw=1ms Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO -15 - - V IC=-10A Collector-emitter breakdown viltage BV

5.8. 2sb1714.pdf Size:118K _rohm

2SB178
2SB178
2SB1714 Transistors -2A / -30V Bipolar transistor 2SB1714 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE( sat) ? -370mV, at IC = -1.5A, IB = -75mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol : XY PNP epitaxial planar silicon transistor Absolute maximum ratings (Ta=25C) Packaging specifications Parameter Symbol Limits Unit Package MPT3 Collector-base voltage VCBO -30 V Packaging type Taping Collector-emitter voltage VCEO -30 V Code T100 Emitter-base voltage VEBO -6 V Part No. Basic ordering unit (pieces) 1000 DC IC -2 2SB1714 A Collector current ?1 Pulse ICP -4 0.5 ?2 Power dissipation PC W ?3 2 Junction temperature tj 150 C Storage temperature tstg -55 to +150 C ?1 Pw=1ms, Pulsed. ?2 Each terminal mounted on a recommended land. ?3 Mounted on a 40?40?0.7mm ceramic board. Electrical character

5.9. 2sb1710.pdf Size:104K _rohm

2SB178
2SB178
2SB1710 Transistors General purpose amplification (-30V, -1A) 2SB1710 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 ( ) 3 Features 1) A collector current is large. 2) Collector saturation voltage is low. ( ) ( ) 1 2 0.95 0.95 VCE(sat) ? -350mV 0.16 1.9 (1) Base at Ic = -500mA / IB = -25mA (2) Emitter Each lead has same dimensions (3) Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO -30 V Type Code TL VCEO -30 V Collector-emitter voltage Basic ordering unit (pieces) 3000 Emitter-base voltage VEBO -6 V IC -1 A 2SB1710 Collector current ICP -2 A?1 PC 500 mW?2 Power dissipation Junction temperature Tj 150 C Range of storage temperature Tstg -55~+150 C ?1Single pulse, PW=1ms ?2Each Terminal Mounted on a Recommended Electrical characteristics (Ta=25C) Parameter Symbol

5.10. 2sb1708.pdf Size:66K _rohm

2SB178
2SB178
2SB1708 Transistors Low frequency amplifier 2SB1708 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) A collector current is large. (3A) (1) (2) 2) VCE(sat) ? -250mV 0.95 0.95 0.16 At IC = -1.5A / IB = -30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO -30 V Type Code TL VCEO -30 V Collector-emitter voltage Basic ordering unit (pieces) 3000 Emitter-base voltage VEBO -6 V 2SB1708 IC -3 A Collector current ? ICP -6 A PC 500 mW Power dissipation Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?Single pulse, PW=1ms Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO -30 - - V IC=-10A Collector-base breakdown voltage Collec

5.11. 2sb1733.pdf Size:107K _rohm

2SB178
2SB178
2SB1733 Transistors General purpose amplification (-30V, -1A) 2SB1733 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. -350mV at Ic = -500mA / IB = -25mA ROHM :TUMT3 Abbreviated symbol : EW (1) Base (2) Emitter (3) Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO -30 V Type Code TL VCEO -30 V Collector-emitter voltage Basic ordering unit (pieces) 3000 Emitter-base voltage VEBO -6 V 2SB1733 IC -1 A Collector current ?1 ICP -2 A ?2 0.4 W PC Power dissipation ?3 0.8 W Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?1 Single pulse, PW=1ms ?2 Each Terminal Mounted on a Recommended land pattern ?3 Mounted on a 25mm?25mm? t 0.8mm ceramic substrate Electrical characteristics (Ta=25C) Para

5.12. 2sb1707.pdf Size:66K _rohm

2SB178
2SB178
2SB1707 Transistors Low frequency amplifier 2SB1707 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 ( ) 3 Features 1) A collector current is large. (4A) ( ) ( ) 2) VCE(sat) ? -250mV 1 2 0.95 0.95 0.16 At IC = -2A / IB = -40mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO -15 V Type Code TL VCEO -12 V Collector-emitter voltage Basic ordering unit (pieces) 3000 Emitter-base voltage VEBO -6 V 2SB1707 IC -4 A Collector current ? ICP -8 A PC 500 mW Power dissipation Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?Single pulse, PW=1ms Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO -15 - - V IC= -10A Collector-base breakdown voltage

5.13. 2sb1734.pdf Size:54K _panasonic

2SB178
2SB178
Transistors 2SB1734 Silicon PNP epitaxial planar type For general amplification Unit: mm Complementary to 2SD2706 0.40+0.10 0.05 0.16+0.10 0.06 3 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing. (0.95) (0.95) 1.90.1 Absolute Maximum Ratings Ta = 25C 2.90+0.20 0.05 Parameter Symbol Rating Unit 10? Collector-base voltage (Emitter open) VCBO -50 V Collector-emitter voltage (Base open) VCEO -50 V 1: Base Emitter-base voltage (Collector open) VEBO -5 V 2: Emitter 3: Collector Collector current IC -200 mA EIAJ: SC-59 Peak collector current ICP -400 mA Mini3-G1 Package Collector power dissipation PC 200 mW Marking Symbol: AF Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = -10

5.14. 2sb1722.pdf Size:81K _panasonic

2SB178
2SB178
Transistors 2SB1722J Silicon PNP epitaxial planar type Unit: mm 1.60+0.05 0.03 0.12+0.03 0.01 For high breakdown voltage low-frequency amplification 1.000.05 3 1 2 Features 0.270.02 High collector-emitter voltage (Base open) VCEO (0.50)(0.50) SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 5? Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -100 V 1: Base Collector-emitter voltage (Base open) VCEO -100 V 2: Emitter 3: Collector Emitter-base voltage (Collector open) VEBO -5 V EIAJ: SC-89 Collector current IC -20 mA SSMini3-F1 Package Peak collector current ICP -50 mA Marking Symbol: 4R Collector power dissipation PC 125 mW Junction temperature Tj 125 C Storage temperature Tstg -55 to +125 C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO

See also transistors datasheet: 2SB172 , 2SB172A , 2SB173 , 2SB173B , 2SB174 , 2SB175 , 2SB176 , 2SB177 , BC639 , 2SB178A , 2SB178B , 2SB178Q , 2SB179 , 2SB17A , 2SB18 , 2SB180 , 2SB180A .

Keywords

 2SB178 Datasheet  2SB178 Datenblatt  2SB178 RoHS  2SB178 Distributor
 2SB178 Application Notes  2SB178 Component  2SB178 Circuit  2SB178 Schematic
 2SB178 Equivalent  2SB178 Cross Reference  2SB178 Data Sheet  2SB178 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com