P-Channel Enhancement Mode MOSFET 
Formosa MS
AS2301
Product Summary 
V(BR)DSS RDS(on)MAX ID 
64mΩ@-4.5V 
-20V 80mΩ@-2.5V -3.4A 
95mΩ@-1.8V 
Feature Application 
 Advanced trench process technology Load Switch for Portable Devices 
 High density cell design for ultra low on-resistance DC/DC Converter 
Package Circuit diagram 
SOT-23 
Marking 
S1. 
Document ID 
http://www.formosagr.com Document ID Issued Date Revised Date Revision Page. 
 Page 1 
TEL:886-755-27188611
FM-3150031 2003/03/08 2018/05/16 E 3 
0
FAX:886-755-27188568 
P-Channel Enhancement Mode MOSFET 
Formosa MS
AS2301
Absolute maximum ratings (Ta=25℃ unless otherwise noted) 
Parameter Symbol Value Unit 
Drain-Source Voltage VDS -20 V 
Gate-Source Voltage VGS ±10 V 
Continuous Drain Current ID -3.4 A 
Pulsed Drain Current IDM -14 A 
Power Dissipation PD 1 W 
Junction Temperature TJ 150 ℃ 
Storage Temperature TSTG -55 ~ +150 ℃ 
Electrical characteristics (TA=25 oC, unless otherwise noted) 
Parameter Symbol Test Condition Min. Typ. Max. Unit 
Static Characteristics 
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -20 V 
Zero gate voltage drain current IDSS VDS =-20V,VGS = 0V -1 µA 
Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±100 nA 
Gate threshold voltage VGS(th) VDS =VGS, ID =-250µA -0.4 -1.0 V 
VGS =-4.5V, ID =-3.4A 64 
、Drain-source on-resistance1) 
RDS(on) VGS =-2.5V, ID =-3.0A 80 mΩ 
VGS =-1.8V, ID =-2.5A 95 
Dynamic characteristics2) 
Input Capacitance Ciss 550 
Output Capacitance Coss VDS =-10V,VGS =0V,f =1MHz 89 pF 
Reverse Transfer Capacitance Crss 65 
Total Gate Charge Qg 4.3 
VDS =-10V,VGS =-4.5V, 
Gate-Source Charge Qgs 0.8 nC 
ID =-3.4A 
Gate-Drain Charge Qgd 1.1 
Turn-on delay time td(on) 12 
Turn-on rise time tr 54 
VDD=-10V, VGS =-4.5V,ID=-1A, 
nS 
RGEN=2.5Ω 
Turn-off delay time td(off) 15 
Turn-off fall time tf 9 
Source-Drain Diode characteristics 
Diode Forward Current1) IS -3.4 A 
Diode Forward voltage VDS VGS =0V, IS=-3.4A -1.2 V 
Notes: 
1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 
2) Guaranteed by design, not subject to production testing. 
Document ID 
http://www.formosagr.com Document ID Issued Date Revised Date Revision Page. 
Page 2 
TEL:886-755-27188611
FM-3150031 2003/03/08 2018/05/16 E 3 
0
FAX:886-755-27188568
P-Channel Enhancement Mode MOSFET 
Formosa MS
AS2301
SOT-23 Package Information 
Dimensions In Millimeters Dimensions In Inches 
Dimensions In Millimeters Dimensions In
Symbol 
Min. Max. Min. Max. 
A 0.900 1.150 0.035 0.045 
A1 0.000 0.100 0.000 0.004 
A2 0.900 1.050 0.035 0.041 
b 0.300 0.500 0.012 0.020 
c 0.080 0.150 0.003 0.006 
D 2.800 3.000 0.110 0.118 
E 1.200 1.400 0.047 0.055 
E1 2.250 2.550 0.089 0.100 
e 0.950 TYP. 0.037 TYP. 
0.
 e1 1.800 2.000 0.071 0.079 
L 0.550 REF. 0.022 REF. 
0.
L1 0.300 0.500 0.012 0.020 
Document ID 
http://www.formosagr.com Document ID Issued Date Revised Date Revision Page. 
Page 3 
TEL:886-755-27188611
FM-3150031 2003/03/08 2018/05/16 E 3 
0
FAX:886-755-27188568