N-Channel Enhancement Mode MOSFET 
Formosa MS
AS2302
Product Summary 
V(BR)DSS RDS(on)MAX ID 
55mΩ@4.5V 
20V 3.0A 
80mΩ@2.5V 
Feature Application 
 Advanced trench process technology Load Switch for Portable Devices 
 High density cell design for ultra low on-resistance DC/DC Converter 
Package Circuit diagram 
SOT-23 
Marking 
2302B. 
Document ID 
http://www.formosagr.com Document ID Issued Date Revised Date Revision Page. 
Page 1 
TEL:886-755-27188611
FM-3150032 2003/03/08 2019/03/16 E 3 
0
FAX:886-755-27188568
N-Channel Enhancement Mode MOSFET 
Formosa MS
AS2302
Absolute maximum ratings (Ta=25℃ unless otherwise noted) 
Parameter Symbol Value Unit 
Drain-Source Voltage VDS 20 V 
Gate-Source Voltage VGS ±10 V 
Continuous Drain Current ID 3.0 A 
Pulsed Drain Current IDM 14 A 
Power Dissipation PD 0.7 W 
Junction Temperature TJ 150 ℃ 
Storage Temperature TSTG -55 ~ +150 ℃ 
Electrical characteristics (TA=25 oC, unless otherwise noted) 
Parameter Symbol Test Condition Min. Typ. Max. Unit 
Static Characteristics 
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 20 V 
Zero gate voltage drain current IDSS VDS =20V,VGS = 0V 1 µA 
Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±100 nA 
Gate threshold voltage VGS(th) VDS =VGS, ID =250µA 0.55 1.25 V 
VGS =4.5V, ID =3A 55 
Drain-source on-resistance1) RDS(on) mΩ 
VGS =2.5V, ID =2A 80 
Dynamic characteristics2) 
Input Capacitance Ciss 280 
Output Capacitance Coss VDS =10V,VGS =0V,f =1MHz 46 pF 
Reverse Transfer Capacitance Crss 29 
Total Gate Charge Qg 2.9 
VDS =10V,VGS =4.5V, 
Gate-Source Charge Qgs 0.4 nC 
ID =4.3A 
Gate-Drain Charge Qgd 0.6 
Turn-on delay time td(on) 13 
Turn-on rise time tr 54 
VDD=10V, VGS =4.5V, 
nS 
RGEN=3Ω, RL=1.5Ω 
Turn-off delay time td(off) 18 
Turn-off fall time tf 11 
Source-Drain Diode characteristics 
Diode Forward Current1) IS 3.0 A 
Diode Forward voltage VDS VGS =0V, IS=3A 1.2 V 
Notes: 
1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 
2) Guaranteed by design, not subject to production testing. 
Document ID 
http://www.formosagr.com Document ID Issued Date Revised Date Revision Page. 
Page 2 
TEL:886-755-27188611
FM-3150032 2003/03/08 2019/03/16 E 3 
0
FAX:886-755-27188568
N-Channel Enhancement Mode MOSFET 
Formosa MS
AS2302
SOT-23 Package Information 
Dimensions In Millimeters Dimensions In Inches 
Dimensions In Millimeters Dimensions In
Symbol 
Min. Max. Min. Max. 
A 0.900 1.150 0.035 0.045 
A1 0.000 0.100 0.000 0.004 
A2 0.900 1.050 0.035 0.041 
b 0.300 0.500 0.012 0.020 
c 0.080 0.150 0.003 0.006 
D 2.800 3.000 0.110 0.118 
E 1.200 1.400 0.047 0.055 
E1 2.250 2.550 0.089 0.100 
e 0.950 TYP. 0.037 TYP. 
0.
 e1 1.800 2.000 0.071 0.079 
L 0.550 REF. 0.022 REF. 
0.
L1 0.300 0.500 0.012 0.020 
Document ID 
http://www.formosagr.com Document ID Issued Date Revised Date Revision Page. 
Page 3 
TEL:886-755-27188611
FM-3150032 2003/03/08 2019/03/16 E 3 
0
FAX:886-755-27188568