View hyg053n10ns1p hyg053n10ns1b detailed specification:
HYG053N10NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/120A RDS(ON)=4.8 m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen-Free Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter systems Battery management N-Channel MOSFET Ordering and Marking Information Package Code P TO-220FB-3L B TO-263-2L P B G053N10 G053N10 Date Code XYMXXXXXX XYMXXXXXX XYMXXXXXX Note HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi- Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require- ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines Green to... See More ⇒
Keywords - ALL TRANSISTORS SPECS
hyg053n10ns1p hyg053n10ns1b.pdf Design, MOSFET, Power
hyg053n10ns1p hyg053n10ns1b.pdf RoHS Compliant, Service, Triacs, Semiconductor
hyg053n10ns1p hyg053n10ns1b.pdf Database, Innovation, IC, Electricity
