View afn7106s datasheet:

AFN7106S Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7106S, N-Channel enhancement mode 20V/20A,RDS(ON)=6.2m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/15A,RDS(ON)=8.4m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power management, such as smart Exceptional on-resistance and maximum DC phone and notebook computer and other current capability battery powered circuits, and low in-line power DFN3.3X3.3-8L package design loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) Application DC-DC Converter POL Pin Define Pin Symbol Description 1 S Source 2 S Source 3 S Source 4 G Gate 5 D Drain

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