View aow11s60 aowf11s60 detailed specification:
AOW11S60/AOWF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW11S60 & AOWF11S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 11nC By providing low RDS(on), Qg and EOSS along with Eoss @ 400V 2.7 J guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested TO-262 TO-262F D Top View Bottom View Top View Bottom View G G S G S D D S D G S D S G AOW11S60 AOWF11S60 Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol AOW11S60 AOWF11S60 Units Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC=25 C 11 11* ... See More ⇒
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aow11s60 aowf11s60.pdf Design, MOSFET, Power
aow11s60 aowf11s60.pdf RoHS Compliant, Service, Triacs, Semiconductor
aow11s60 aowf11s60.pdf Database, Innovation, IC, Electricity
