View asdm30dn30e detailed specification:
ASDM30DN30E 30V Dual N-Channel Power MOSFET Product Summary Description V DS 30 V l100% EAS Guaranteed R DS(on),Typ@ VGS=10 V 16 m lGreen Device Available I D 30 A lSuper Low Gate Charge lExcellent CdV/dt effect decline lAdvanced high cell density Trench technology PDFN 3.3x3.3-8 NMOS Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage 30 V DS V Gate-Source Voltage 20 V GS ID@TC=25 Continuous Drain Current, V @ 10V1 30 A GS ID@TC=100 Continuous Drain Current, V @ 10V1 16 A GS I Pulsed Drain Current2 120 A DM EAS Single Pulse Avalanche Energy3 24.2 mJ I Avalanche Current 22 A AS PD@TC=25 Total Power Dissipation4 26 W T Storage Temperature Range -55 to 150 STG T Operating Junction Temperature Range -55 to 150 J Thermal Data Symbol Parameter Typ. Max. Unit R Thermal Resistance Junction-Ambie... See More ⇒
Keywords - ALL TRANSISTORS SPECS
asdm30dn30e.pdf Design, MOSFET, Power
asdm30dn30e.pdf RoHS Compliant, Service, Triacs, Semiconductor
asdm30dn30e.pdf Database, Innovation, IC, Electricity
