View asdm60n30kq detailed specification:
ASDM60N30KQ 60V N-Channel MOSFET Product Summary General Features High density cell design for ultra low Rdson BVDSS 60 V Fully characterized avalanche voltage and current Good stability and uniformity with high EAS RDS(on),Typ.@ VGS=10 V 23 m Excellent package for good heat dissipation ID 30 A Special process technology for high ESD capability Application Power switching application Hard switched and high frequency circuits Uninterruptible power supply D G S TO-252 Absolute Maximum Ratings (T =25 unless otherwise specified) C Symbol Parameter Max. Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = 25 C 30 A I Continuous Drain Current D T = 100 C 20 A Pulsed Drain Current note1 I 120 A DM Single Pulsed Avalanche Energy note2 EAS 72 mJ P Power Dissipation T = 25... See More ⇒
Keywords - ALL TRANSISTORS SPECS
asdm60n30kq.pdf Design, MOSFET, Power
asdm60n30kq.pdf RoHS Compliant, Service, Triacs, Semiconductor
asdm60n30kq.pdf Database, Innovation, IC, Electricity
