View asdm60r042nq detailed specification:
ASDM60R042NQ 60V N-Channel MOSFET General Features Product Summary Advanced Trench MOS Technology VDS 60 V Low On-Resistance 100% avalanche tested RDS(on).Typ@ VGS=10 V 4.4 m Fast Switching Speed 116 ID A Excellent package for good heat dissipation Application DC/DC Converters On board power for server Synchronous rectification DFN5 6-8 Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage 60 V DS V Gate-Source Voltage 20 GS V 116 A I =25 D@T C Continuous Drain Current1,6 74 A I =100 D@T C I Pulsed Drain Current2 464 A DM EAS Single Pulse Avalanche Energy3 125 mJ I Avalanche Current 116 A S Total Power Dissipation4 113 W P =25 D@T C T Storage Temperature Range -55 to 150 STG T Operating Junction Temperature Range -55 to 150 J Thermal Data Symbol P... See More ⇒
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asdm60r042nq.pdf Design, MOSFET, Power
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