View 2n3055 mj2955 detailed specification:
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055 NPN SILICON PLANAR POWER TRANSISTORS MJ2955 PNP TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITS VALUE Collector Base Voltage VCBO V 100 Collector Emitter Voltage VCEO V 60 Collector Emitter Voltage(RBE=100 ) VCER V 70 Emitter Base Voltage VEBO 7 V Collector Current Continuous IC 15 A Base Current IB 7 A Power Dissipation @ Tc=25 C Ptot 115 W Derate Above 25 C 0.657 W/ C Operating And Storage Junction Tj, Tstg - 65 to +200 C Temperature Range THERMAL RESISTANCE Rth(j-c) Junction to Case 1.52 C/W ELECTRICAL CHARACTERISTICS (TC=25 C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS Collector Emitter Sustaing Voltage VCEO(sus)*IC=200mA, IB=0 60 V Col... See More ⇒
Keywords - ALL TRANSISTORS SPECS
2n3055 mj2955.pdf Design, MOSFET, Power
2n3055 mj2955.pdf RoHS Compliant, Service, Triacs, Semiconductor
2n3055 mj2955.pdf Database, Innovation, IC, Electricity
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet



