All Transistors. Equivalents Search

View agm056n10a detailed specification:

AGM056N10A General Description The AGM056N10A combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery protection applications. BVDSS RDSON ID Features 100V 4.7m 100A Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to minimize conductive loss DS(ON) Low Gate Charge for fast switching Low Thermal resistance 100% Avalanche tested 100% DVDS tested Application MB/VGA Vcore SMPS 2nd Synchronous Rectifier POL application BLDC Motor driver Package Marking and Ordering Information Quantity Device Marking Device Device Package Reel Size Tape width AGM056N10A AGM056N10A PDFN5*6 330mm 12mm 3000 Table 1. Absolute Maximum Ratings (TA=25 ) Symbol Parameter Va... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 agm056n10a.pdf Design, MOSFET, Power

 agm056n10a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 agm056n10a.pdf Database, Innovation, IC, Electricity