View agm056n10c detailed specification:
AGM056N10C General Description Product Summary The AGM056N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 100V 5.4m 140A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to minimize conductive loss DS(ON) Low Gate Charge for fast switching Low Thermal resistance 100% Avalanche tested 100% DVDS tested Application MB/VGA Vcore SMPS 2nd Synchronous Rectifier POL application BLDC Motor driver Package Marking and Ordering Information Quantity Device Marking Device Device Package Reel Size Tape width ---- ---- AGM056N10C AGM056N10C TO-220 1000 Table1. Absolute Maximum Ratings (TC=25 ) Symbol Parameter Val... See More ⇒
Keywords - ALL TRANSISTORS SPECS
agm056n10c.pdf Design, MOSFET, Power
agm056n10c.pdf RoHS Compliant, Service, Triacs, Semiconductor
agm056n10c.pdf Database, Innovation, IC, Electricity
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet



