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AGM056N10H General Description The AGM056N10H combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. Features 100V 5.1m 140A Advance high cell density Trench technology TO-263 Pin Configuration Low R to minimize conductive loss DS(ON) Low Gate Charge for fast switching Low Thermal resistance 100% Avalanche tested 100% DVDS tested Application MB/VGA Vcore SMPS 2nd Synchronous Rectifier POL application BLDC Motor driver Package Marking and Ordering Information Quantity Device Marking Device Device Package Reel Size Tape width AGM056N10H AGM056N10H TO-263 330mm 25mm 800 Table 1. Absolute Maximum Ratings (TA=25 ) Symbol Parameter Valu... See More ⇒

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