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View agm12n10a detailed specification:

AGM12N10A Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.71 AGM12N10A Gate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I =250uA TH j D BR(DSS) j D Typ. gate charge Typ. capacitances V =f(Q ) ; I =10A C =f(V ); V =0V; f =1MHz GS g D DS GS www.agm-mos.com 4 VER2.71 AGM12N10A Power Dissipation Maximum Drain Current P =f(T ) I =f(T ) tot C D C Safe operating area Body Diode Forward Voltage Variation I =f(V ) I =f(V ) D DS F GS www.agm-mos.com 5 VER2.71 AGM12N10A Max. transient thermal impedance Z =f(t ) thJC p www.agm-mos.com 6 VER2.71 AGM12N10A Test Circuit and Waveform Gate Charge Test Circuit... See More ⇒

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