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AGM12N10AP Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1.0 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V =V ,I =250 A DS GS D 1.2 1.8 2.2 V g Forward Transconductance V =5V,I =15A -- -- S DS D FS 23 V =10V, I =20A GS D -- 9.3 13 m R Drain-Source On-State Resistance DS(on) V =4.5V, I =15A -- GS D 16 m 13 Dynamic Characteristics -- 1080 -- C Input Capacitance pF iss VDS=50V,VGS=0V, C Output Capacitance oss F=1MHZ -- -- 460 pF C Reverse Transfer Capacitance rss -- -- pF 9.0 =0V, Rg Gate resistance VGS -- 11.5 -- =0V,f=1.0MHz VDS Switching Times Turn-on ... See More ⇒

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