View agm408m detailed specification:
AGM408M Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I =250 A -- DS GS D GS(th) 1.2 2.2 V g Forward Transconductance V =5V,I =10A -- S DS D FS 11 -- V =10V, I =15A GS D -- 11 15 m R Drain-Source On-State Resistance DS(on) V =4.5V, I =10A -- GS D m 15 21 Dynamic Characteristics -- -- Ciss Input Capacitance pF 1314 VDS=20V,VGS=0V C Output Capacitance oss ,F=1MHZ -- -- pF 120 C Reverse Transfer Capacitance rss -- -- pF 88 =0V, VGS Rg Gate resistance -- -- 2.1 =0V,f=1.0MHz VDS Switching Times Turn-on Delay... See More ⇒
Keywords - ALL TRANSISTORS SPECS
agm408m.pdf Design, MOSFET, Power
agm408m.pdf RoHS Compliant, Service, Triacs, Semiconductor
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