View agm655d detailed specification:
AGM655D 80 VGS=4.5V 70 1 150 25 VGS=10V 60 Tj=25 0.1 50 0.4 0.5 0.6 0.7 0.8 0.9 012345 Vsd- Source to Drain Voltage (V) ID-Drain Current (A) Figure 7. RDS(on) VS Drain Current Figure 8. Forward characteristics of reverse diode 1.15 1.4 ID=250uA ID=250uA 1.2 1.1 1 1.05 0.8 1 0.6 0.95 0.4 0.9 0.2 -75 -25 25 75 125 175 -75 -25 25 75 125 175 Tj-Junction Temperature ( ) Tj-Junction Temperature ( ) Figure 9. Normalized breakdown voltage Figure 10. Normalized Threshold voltage 1.2 20 1.0 15 0.8 10 5 0.6 0 0.4 -50 0 50 100 150 -50 0 50 100 150 Ta-Ambient Temperature ( ) Ta-Ambient Temperature ( ) Figure 11. Current dissipation Figure 12. Power dissipation www.agm-mos.com 4 VER2.66 Is -Reverse Drain Current (A) DS(on) R -Drain to Source resistance (m ) Normalized Normalized VGS(th) -Threshold Voltage DSS BV - MAX... See More ⇒
Keywords - ALL TRANSISTORS SPECS
agm655d.pdf Design, MOSFET, Power
agm655d.pdf RoHS Compliant, Service, Triacs, Semiconductor
agm655d.pdf Database, Innovation, IC, Electricity


