All Transistors. Equivalents Search

View agmh6080h detailed specification:

AGMH6080H Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V =V ,I =250 A DS GS D V 2.0 -- 4.0 g Forward Transconductance V =5V,I =10A -- -- S DS D FS 25 VGS=10V, ID=20A -- RDS(on) Drain-Source On-State Resistance m 6.2 8.0 Dynamic Characteristics -- -- C Input Capacitance pF iss 2710 VDS=30V,VGS=0V, C Output Capacitance oss F=1MHZ -- -- pF 203 C Reverse Transfer Capacitance rss -- -- pF 176 =0V, Rg Gate resistance VGS -- -- 1.7 =0V,f=1.0MHz VDS Switching Times -- -- td(on) Turn-on Delay Time nS 17.9 t Turn-on ... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 agmh6080h.pdf Design, MOSFET, Power

 agmh6080h.pdf RoHS Compliant, Service, Triacs, Semiconductor

 agmh6080h.pdf Database, Innovation, IC, Electricity