View ap5p06msi detailed specification:
AP5P06MSI -60V P-Channel Enhancement Mode MOSFET Description The AP5P06MSI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-5A DS D R ... See More ⇒
Keywords - ALL TRANSISTORS SPECS
ap5p06msi.pdf Design, MOSFET, Power
ap5p06msi.pdf RoHS Compliant, Service, Triacs, Semiconductor
ap5p06msi.pdf Database, Innovation, IC, Electricity
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet



