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View 2sc3357-f 2sc3357-e detailed specification:

2SC3357 SMD Ty p e NPN Transistors 3 Features 2 Low noise and high gain 1 1.Base High power gain 2.Collector Large Ptot 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 100 mA Collector Power Dissipation PC 1.2 W Junction to Ambient Resistance Rth (j-a) 62.5 /W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 A IE= 0 20 Collector- emitter breakdown voltage VCEO Ic= 1 mA IB= 0 12 V Emitter - base breakdown voltage VEBO IE= 100 A IC= 0 3 Collector-base cut-off ... See More ⇒

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