View e50n06 d50n06 h50n06 t50n06 detailed specification:
50N06 60V N-Channel Power MOSFET TO-263 TO-252 Features Low FOM RDS(on) Qgd 100% avalanche tested Easy to use/drive RoHS compliant TO-251 TO-220 Drain Applications DC/DC Converter Battery Protection Charge/Discharge Gate Load Switch Synchronous Rectification Source Key Performance Parameters Parameter Value Unit VDS@ Tc=25 60 V RDS(on),max@10V 17 m RDS(on),max@4.5V 23 m Qg,typ 40 nC ID@Tc=25 50 A ID,pulse 200 A EAS1) 98 mJ Device Marking and Package Information Device Package Marking E50N06 TO-263 BCE5N06 D50N06 TO-252 BCD5N06 H50N06 TO-251 BCH5N06 T50N06 TO-220 BCT5N06 1 50N06 60V N-Channel Power MOSFET Absolute Maximum Ratings TA = 25 unless otherwise noted C, Parameter Symbol Values Unit Drain-Source Voltage(VGS=0V) VDS 60 V TC = 25 C 50 Continuous Drain Current2) ID A TC = 100 C 32 Pulsed ... See More ⇒
Keywords - ALL TRANSISTORS SPECS
e50n06 d50n06 h50n06 t50n06.pdf Design, MOSFET, Power
e50n06 d50n06 h50n06 t50n06.pdf RoHS Compliant, Service, Triacs, Semiconductor
e50n06 d50n06 h50n06 t50n06.pdf Database, Innovation, IC, Electricity
