View 9n90 datasheet:

9N909A 900V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 900Vplanar technology which reduce the conduction loss, improve switchingI = 9.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)= 920m2 Features Fast switching ESD improved capability Low on resistance(Rdson1.3) 100% single pulse avalanche energy test 100% VDS test3 Applications Used in various power switching circuit for systemTO-3PNminiaturization and higher efficiency. Power switch circuit of electron ballast and adaptor.4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)PARAMETER SYMBOL VALUE UNITDrian-Source Voltage V 900 VDSGate-Source Voltage V 30 VGSDrain Curr

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