View dh033n03r datasheet:

DH033N03R65A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced mode power vdmosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR =3.4mDS(on) (TYP)Gstandard.1I = 65A3 S D2 Features= Low switching loss= Low on resistance= Low gate charge Low reverse transfer capacitance 100% single pulse avalanche energy test 100% V testDS3 Applications Power switching applications Inverter management systemPDFN33-8L Power tools DC-DC converters4 Electrical Characteristics4.1 Absolute Maximum Rating(Tc=25,unless otherwise noted)Parameter Symbol Rating UnitsDrian-to-Source Voltage V 30 VDSSGate-to-Source Voltage V 20 VGSST =25 65 ACContinuous Drain Current IDT =100

Keywords - ALL TRANSISTORS DATASHEET

 dh033n03r.pdf Design, MOSFET, Power

 dh033n03r.pdf RoHS Compliant, Service, Triacs, Semiconductor

 dh033n03r.pdf Database, Innovation, IC, Electricity