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DH100N03B13/DHF100N03B13/DHI100N03B13/ DHE100N03B13/DHB100N03B13/DHD100N03B13 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 3.3m DS(on) (TYP) standard. 1 3 S I = 100A D 2 Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V test DS TO-220C TO-220F TO-262 3 Applications Power switching applications Battery management Power tools Automotive electronics TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Ratings (Tc=25 ,unless otherwise noted) Rating DH100N03B13 Parameter Symbol Units DHF100N0 /DHI100N0... See More ⇒

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 dh100n03b13 dhf100n03b13 dhi100n03b13 dhe100n03b13 dhb100n03b13 dhd100n03b13.pdf Design, MOSFET, Power

 dh100n03b13 dhf100n03b13 dhi100n03b13 dhe100n03b13 dhb100n03b13 dhd100n03b13.pdf RoHS Compliant, Service, Triacs, Semiconductor

 dh100n03b13 dhf100n03b13 dhi100n03b13 dhe100n03b13 dhb100n03b13 dhd100n03b13.pdf Database, Innovation, IC, Electricity