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View dh100p30c dh100p30cf dh100p30ci dh100p30ce dh100p30cb dh100p30cd detailed specification:

dh100p30c_dh100p30cf_dh100p30ci_dh100p30ce_dh100p30cb_dh100p30cddh100p30c_dh100p30cf_dh100p30ci_dh100p30ce_dh100p30cb_dh100p30cd

DH100P30C/DH100P30CF/DH100P30CI DH100P30CE/DH100P30CB/DH100P30CD 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used 2 D advanced trench technology design, provided excellent V = -100V DSS Rdson and low gate charge. Which accords with the RoHS G R = 40m DS(on) (TYP) standard. 1 3 S ID =-30A 2 Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V test DS TO-220C TO-220F TO-262 3 Applications Power switching applications Inverter management system Power tools Alertor TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Ratings (Tc=25 ,unless otherwise noted) Rating DH100P30C Parameter Symbol Units DH100 DH100P30CI/DH100P30CE P30CF DH100P3... See More ⇒

 

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 dh100p30c dh100p30cf dh100p30ci dh100p30ce dh100p30cb dh100p30cd.pdf Design, MOSFET, Power

 dh100p30c dh100p30cf dh100p30ci dh100p30ce dh100p30cb dh100p30cd.pdf RoHS Compliant, Service, Triacs, Semiconductor

 dh100p30c dh100p30cf dh100p30ci dh100p30ce dh100p30cb dh100p30cd.pdf Database, Innovation, IC, Electricity

 

 
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