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DH16N06/DHF16N06/DHI16N06/DHE16N06/DHB16N06/DHD16N0661A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs Used by the2 DVDSS = 60Vself-aligned planar technology which reduce theconduction loss, improve switching performance andRDS = 16m(on) (TYP)Genhance the avalanche energy. Which accords with the1RoHS standard. ID = 61A3 S2 Features Fast Switching Low ON Resistance(Rdson23m) Low Gate Charge(Typ: 39.3nC) Low Reverse Transfer Capacitances(Typ: 90pF) 100% Single Pulse Avalanche Energy TestTO-220CTO-220F TO-262 100% V TestDS3 Applications Battery power supply management circuit DC-DC Convertors UPS power supplyTO-251BTO-263 TO-252B Load switch4 Electrical Characteristics4.1 Absolute Maximum Rating(Tc=25,unless otherwise noted)ValuePar

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 dh16n06 dhf16n06 dhi16n06 dhe16n06 dhb16n06 dhd16n06.pdf Design, MOSFET, Power

 dh16n06 dhf16n06 dhi16n06 dhe16n06 dhb16n06 dhd16n06.pdf RoHS Compliant, Service, Triacs, Semiconductor

 dh16n06 dhf16n06 dhi16n06 dhe16n06 dhb16n06 dhd16n06.pdf Database, Innovation, IC, Electricity