View dhs043n07p datasheet:

DHS043N07P100A 70V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 70VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.0mDS(on) (TYP)the RoHS standard.13 SI = 100AD2 Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V testDS3 Applications Synchronous rectification in SMPS Hard switching and high speed circuit Power tools UPSDFN5*6 Motor control4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)Parameter Symbol Rating UnitsDrian-to-Source Voltage V 70 VDSSGate-to-Source Voltage V 20 VGSST =25 100 ACContinuous

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