View dsg030n10n3 dse028n10n3 datasheet:
DSG030N10N3/DSE028N10N3170A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 100VDSSadvanced splite gate trench technology design, provided2 Dexcellent Rdson and low gate charge. Which accords withR = 2.6mTO-220DS(on) (TYP)the RoHS standard.GR = 2.4mTO-263DS(on) (TYP)12 Features 3 SI = 170AD Fast switching Low on resistance Low gate charge High avalanche current Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V testDS3 Applications Synchronous rectification in SMPS Hard switching and high speed circuit Power toolsTO-263TO-220 UPS Motor control4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)Parameter Symbol Rating UnitsD
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dsg030n10n3 dse028n10n3.pdf Design, MOSFET, Power
dsg030n10n3 dse028n10n3.pdf RoHS Compliant, Service, Triacs, Semiconductor
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