View dtg018n04n dtj018n04n datasheet:

DTG018N04N/DTJ018N04N180A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent V = 40VDSS2 DRdson and low gate charge. Which accords with the RoHSR = 1.5mDS(on) (TO-220)TYPstandard.GR = 1.5mDS(on) (TO-262)TYP1I = 300ADSilicon limited3 S2 FeaturesI = 180AD Package limited Fast switching Low on resistance Low gate charge 100% V tesDS 100% single pulse avalanche energy test3 Applications Motor control and drive Battery management UPS (Uninterrupible Power Supplies)TO-262TO-2204 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)Parameter Symbol Rating UnitsDrian-to-Source Voltage V 40 VDSSGate-to-Source Voltage V 20 VGSST

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