View btd882t3 detailed specification:
Spec. No. C848T3-H Issued Date 2002.08.18 CYStech Electronics Corp. Revised Date 2014.03.17 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3A BTD882T3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772T3 Pb-free package Symbol Outline BTD882T3 TO-126 B Base C Collector E Emitter E C B Ordering Information Device Package Shipping TO-126 200 pcs / bag, 3,000 pcs/box , BTD882T3-X-BL-X (Pb-free lead plating package) 30,000 pcs/carton Environment friendly grade S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, BL bulk, 200 pcs/bag, 15 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name BTD882T3 CYStek Product Specif... See More ⇒
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btd882t3.pdf Design, MOSFET, Power
btd882t3.pdf RoHS Compliant, Service, Triacs, Semiconductor
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