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DC COMPONENTS CO., LTD. DXTD882 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for the output stage of 0.75W audio, voltage regulator, and relay driver. SOT-89 .063(1.60) .066(1.70) Pinning .055(1.40) .059(1.50) 1 = Base 2 = Collector 3 = Emitter .102(2.60) .167(4.25) .095(2.40) .159(4.05) 1 2 3 Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit .020(0.51) .060(1.52) Collector-Base Voltage VCBO 40 V .014(0.36) .016(0.41) .058(1.48) .014(0.35) Collector-Emitter Voltage VCEO 30 V .120(3.04) Emitter-Base Voltage VEBO 5 V .117(2.96) Collector Current IC 3 A .181(4.60) .173(4.40) Total Power Dissipation PD 1.5 W o Junction Temperature TJ +150 C Dimensions in inches and (millimeters) o Storage Temperature TSTG -55 to +150 C Electrical Characteristics (Ratings at 25oC a... See More ⇒

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