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2N3820 P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 89. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage -20 V VGS Gate-Source Voltage 20 V IGF Forward Gate Current 10 mA TSTG Storage Temperature Range -55 150 C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TC=25 C unless otherwise noted Symbol Par... See More ⇒

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